ROHM DTA114GKA, DTA114GSA, DTA114GUA Schematic [ru]

DTA114GUA / DTA114GKA / DTA114GSA

Transistors

Digital transistors (built-in resistor)

DTA114GUA / DTA114GKA / DTA114GSA

!!!!Features

1) The built-in bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input, and
parasitic effects are almost completely eliminated.

2) Only the on / off conditions need to be set for operation,
making device design easy.

3) Higher mounting densities can be achieved.

!!!!Equivalent circuit

B

E : Emitter
C : Collector
B : Base

R

C

E

!!!!Absolute maximum ratings (Ta=25°C)

Parameter Symbol

Collector-base voltage
Collector-emitter voltage

Emitter-base voltage
Collector current

Collector Power
dissipation

DTA114GUA / DTA114GKA

DTA114GSA
Junction temperature
Storage temperature

V

CBO

V

CEO

V

EBO

I

Pc

Tj

Tstg

C

Limits

−50

−50

−5

−100

200
300
150

−55 to +150

!!!!Package, marking, and packaging specifications

Type DTA114GUA
Package
Marking
Packaging code
Basic ordering unit (pieces)

UMT3

K14
T106
3000

DTA114GKA

SMT3

K14
T146
3000

DTA114GSA

SPT

−

TP

5000

!!!!External dimensions (Unit: mm)

DTA114GUA

ROHM : UMT3
EIAJ : SC-70

DTA114GKA

0.4

Unit

V
V

ROHM : SMT3
EIAJ : SC-59

V

DTA114GSA

ROHM : SPT
EIAJ : SC-72

3

)

15Min.

(

(1) (2) (3)

mA

mW

°C
°C

)
1

(

0.65

)
2

)

(
3

(

0.3

0.15

0.1Min.

)
3

(

0.15

0.3Min.

42

3Min.

0.45

2.5

5

0.65

1.25

2.1

0.2

0.7

Each lead has same dimensions

0~0.1

(1) Emitter
(2) Base
(3) Collector

)
1

(

)
2

(

0.95 0.95

1.6

2.8

0.8

0.1

~

Each lead has same dimensions

0

(1) Emitter
(2) Base
(3) Collector

0.45

0.5

Taping specifications

(1) Emitter
(2) Collector
(3) Base

2.0

1.3

0.9

1.9

2.9

1.1

1/2

DTA114GUA / DTA114GKA / DTA114GSA

Transistors

!!!!Electrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Emitter-base resistance
Transition frequency

∗Transition frequency of the device.

!!!!Electrical characteristics curves

Ta=25˚C

V

O

=5V

500

FE

200

100

50

20

10

DC CURRENT GAIN : h

5

2

0.5 2 51 10 20 50 100

COLLECTOR CURRENT : I

Fig.1 DC Current gain
vs. Collector Current

BV
BV
BV

V

−50 −−VIC= −50µA

CBO

−50 −−V

CEO

−5 −−V

EBO

I
I

CE(sat)

c

−−−0.5 µA

CBO

−300

EBO

−−−0.3 V

30

FE

713kΩ

1

f

− 25010− MHz

T

(mA)

−−580 µA

−−

I

= −1mA

C

I

= −720µA

E

V

= −50V

CB

V

= −4V

EB

I

= −10mA, IB= −0.5mA

C

= −5mA, VCE= −5Vh

−

I

C

−R

V

= −10V, IE=50mA, f=100MHz

CE

1000

Ta=25˚C

500

(sat)(mV)

CE

200

100

50

20

10

1 2 5 10 20 50 100

COLLECTOR SATURATION VOLTAGE: V

IC / IB=20 / 1

IC / IB=10 / 1

COLLECTOR CURRENT : V

Fig.2 Collector-emitter saturation voltage
vs. Collector Current

∗

DS

(V)

2/2