ROHM DTA114EB, DTA114EE, DTA114EKA, DTA114EM, DTA114EUA Schematic [ru]

100mA / 50V Digital transistors

(with built-in resistors)

DTA114EB / DTA114EM / DTA114EE / DTA114EUA / DTA114EKA

zApplications
Inverter, Interface, Driver

zFeatures

1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors
(see equivalent circuit).

2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the

advantage of almost completely eliminating parasitic effects.

3) Only the on/off conditions need to be set for operation, making the device design easy.

zStructure

PNP epitaxial planar silicon transistor (Resistor built-in type)

zDimensions (Unit : mm)

DTA114EB

0.22

0.1

0.16

(3)

ROHM :

VMN3

DTA114EM

ROHM : VMT3

DTA114EUA

ROHM : UMT3
EIAJ : SC-70

0.8

1.0

0.1

(1) (2)

0.17

0.35

0.6

Abbreviated symbol : 14

1.2

0.32

(3)

(2)

(1)

0.22

0.40.4

0.8

Abbreviated symbol : 14 Abbreviated symbol : 14

2.0

0.3

(3)

(1)

(2)

0.65

0.65

1.3

Abbreviated symbol : 14

0.37

Each lead has same dimensions

0.2

1.2

0.8

0.13

0.2

0.5

Each lead has same dimensions

0.9

0.7

0.2

2.1

1.25

0.15

Each lead has same dimensions

(1) IN
(2) GND
(3) OUT

(1) IN
(2) GND
(3) OUT

(1) GND
(2) IN

0.1Min.

(3) OUT

DTA114EE

ROHM : EMT3

DTA114EKA

ROHM : SMT3
EIAJ : SC-59

1.6

0.3

(3)

0.8

(2)

0.2

(1)

0.2

0.5

0.5

1.0

2.9

0.4

(3)

(2)

0.95 0.95

Abbreviated symbol : 14

(1)

1.9

1.6

0.15

Each lead has same dimensions

1.6

2.8

Each lead has same dimensions

0.7

0.55

0.15

(1) GND
(2) IN

0.1Min.

(3) OUT

1.1

0.8

(1) GND
(2) IN

0.3Min.

(3) OUT

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2009 ROHM Co., Ltd. All rights reserved.

2009.03 - Rev.C

S
I

O
P

J
S

R

zPackaging specifications zEquivalent circuit

VMN3

T2L

8000

Type
DTA114EB
DTA114EM

DTA114EE
DTA114EUA
DTA114EKA

Package
Packaging type
Code

Basic ordering
unit (pieces)

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol

upply voltage

nput voltage

utput current

ower dissipation

unction temperature

torage temperature

V

V

I

I

C(Max.)

Pd

Tj

Tstg

CC

IN

O

zElectrical characteristics (Ta=25°C)

Parameter Symbol

V

Input voltage
Output voltage

Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency

∗ Characteristics of built-in transistor

I(off)

V

I(on)

V

O(on)

I

I

O(off)

G
R

R2/R

f

I

1

T

VMT3

TapingTapingTaping Taping Taping

T2L

8000

−

−

−

−

3000

−

−

−

−

150 200

Min.

Typ. Max. Unit Conditions

−0.5

−

−

−

−3

−0.3

−

−

−0.88

−

−

−0.5

−

−

−

30

I

10

7

1

0.8

1

250

−

UMT3EMT3 SMT3

T106

TL

3000

−

−

−

−

T146

3000

−

−

−

−

−

−

−

−

Limits

DTA114EEDTA114EMDTA114EB DTA114EUA DTA114EKA

−50

−40 to +10

−50

−100

150

−55 to +150

V

CC

V

−

V

mA

µA

−

−

13

kΩ

1.2

−−

−

MHz

=−5V, IO=−100µA

V

O

=−0.3V, IO=−10mA

I

O/II

=−10mA/−0.5mA

V

I

=−5V

V

CC

=−50V, VI=0V

O

=−5V, IO=−5mA

V

−

V

CE

=−10V, IE=5mA, f=100MHz∗

1=R2

Unit

V
V

mA

mW

°C
°C

IN

IN

=10kΩ

R

1

R

2

GND(+)

Data Sheet DTA114EB / DTA114EM / DTA114EE / DTA114EUA / DTA114EKA

OUT

GND(+)

OUT

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2009 ROHM Co., Ltd. All rights reserved.

2009.03 - Rev.C