ROHM DTA114EEB Schematic [ru]
Transistors
100mA / 50V Digit al transistors (with built-in resistors)
DTA114EEB
zApplications zDimensions (Unit : mm)
Inverter, Interface, Driver
zFeatures
1) Built-in bias resistors enable the configuratio n of
an inverter circuit without connecting external
input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for
operation, making the device design easy.
zStructure zEquivalent circuit
PNP silicon epitaxial planar transistor type
(Resistor built-in)
zPackaging specifications
EMT3F
TL
3000
Part No.
DTA114EEB
Package
Packaging type Taping
Code
Basic ordering unit (pieces)
zAbsolute maximum ratings (Ta=25°C)
Supply voltage
Input voltage
Collector current
Output current
Power dissipation
Junction temperature
Storage temperature
∗1 Characteristics of built-in transistor
∗2 Each terminal mounted on a recommended land
V
V
Io
P
Tj
Tstg
CC
IN
D
LimitsParameter Symbol
−50
−40 to +10
∗1
∗2
−100 mAIc(max)
−50
150
150
−55 to +150
Unit
mW
mA
°C
°C
V
V
EMT3F
(1) IN
(2) GND
(3) OUT
IN
IN
R1=10kΩ
2=10kΩ
R
1.6
0.26
(3)
0.37
1.6
0.86
(1) (2)
0.37
0.5 0.5
1.0
Abbreviated symbol : 14
R
1
R
2
GND(+)
DTA114EEB
0.7
0.45
0.13
Each lead has same dimensions
OUT
GND(+)
OUT
0.45
1/2
Transistors
zElectrical characteristics (T a=25°C)
Parameter Symbol
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
Characteristics of built-in transistor
∗
zElectrical characteristic curves
100
50
20
(V)
I(on)
10
Ta= −40°C
5
2
1
500m
INPUT VOLTAGE : V
200m
100m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
25°C
100°C
OUTPUT CURRENT : I
O
(A)
Fig.1 Input voltage vs. output current
(ON characteristics)
1
500m
Ta=100°C
(V)
200m
O(on)
100m
50m
20m
10m
5m
OUTPUT VOLTAGE : V
2m
1m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
25°C
−40°C
OUTPUT CURRENT : I
O
(A)
Fig.4 Output voltage vs. output
current
I(off)
V
V
I(on)
V
O(on)
I
I
I
O(off)
G
f
T
R
1
R2/R
VO=0.3V
lO/lI=20
Min.
−3.0
I
∗
1
Typ. Max. Unit Conditions
−
−
−
−100
−
−
−
−
−
30
−
250
−
10
7
1.0
0.8
10m
VCC=5V
5m
Ta=100°C
2m
(A)
1m
500µ
200µ
100µ
50µ
20µ
10µ
OUTPUT CURRENT : Io
5µ
2µ
1µ
−500
−
−300
−880
−500
−
−
13
1.2
25°C
−40°C
0.5 1.0 1.5 2.0 2.5 3.00
INPUT VOLTAGE : V
V
CC
mV
V
mV
µA
nA
−
MHz
= −5V, IO= −100µA
V
O
= −0.3V, IO= −10mA
I
O
= −10mA, II= −0.5mA
V
I
= −5V
V
CC
= −50V, VI=0V
V
O
= −5V, IO= −5mA
V
CE
= −10V, IE=5mA, f=100MHz
kΩ
−−
I(off)
Fig.2 Output current vs. input voltage
(OFF characteristics)
(V)
DTA114EEB
−
1k
500
Ta=100°C
I
200
100
50
20
10
DC CURRENT GAIN : G
25°C
−40°C
5
2
1
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
OUTPUT CURRENT : I
Fig.3 DC current gain vs. output
current
VO=5V
O
(A)
2/2
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