ROHM DTA043TUB Technical data

Datasheet

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© 2012 ROHM Co., Ltd. All rights reserved.

DTA043T series

PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)

lOutline

lFeatures

1) Built-In Biasing Resistors

2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).

3) The bias resistors consist of thin-film resistors

with complete isolation to allow negative biasing

lInner circuit

of the input. They also have the advantage of
completely eliminating parasitic effects.

4) Only the on/off conditions need to be set for
operation, making the circuit design easy.

5) Complementary NPN Types :DTC043T series

6) Lead Free/RoHS Compliant.

lApplication

Switching circuit, Inverter circuit, Interface circuit,
Driver circuit

lPackaging specifications

R

1

4.7kW

Parameter

Value

V

CEO

-50V

I

C

-100mA

Part No.

Package

Package

size

(mm)

Taping

code

3,000398

Tape width

(mm)

Basic

ordering

unit (pcs)

Marking

DTA043TM

VMT3

1212

T2L

180

8

8,000

Reel size

(mm)

39

DTA043TEB

EMT3F

1616

TL

180

3,000

39

DTA043TUB

UMT3F

2021

TL

180

8

VMT3

EMT3F

UMT3F

DTA043TM

(SC-105AA)

Collector

Base

Emitter

DTA043TUB

(SC-85)

Collector

Base

Emitter

Collector

Base

Emitter

DTA043TEB

(SC-89)

1/6

2012.04 - Rev.B

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© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

DTA043T series

lAbsolute maximum ratings (Ta = 25°C)

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current

Collector Power dissipation

Junction temperature
Range of storage temperature

lElectrical characteristics(Ta = 25°C)

*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint

Parameter

Symbol

Values

Unit

V

CBO

-50

V

V

CEO

-50

V

V

EBO

-5

V

I

C

-100

mA

DTA043TM
DTA043TEB

P

C

*2

150

mW

DTA043TUB

200

mW

T

j

150

°C

T

stg

-55 to +150

°C

Unit

Min.

Typ.

Max.

Parameter

Symbol

Conditions

V

Collector-emitter breakdown voltage

BV

CEO

IC= -1mA

V

-50--50

---

Collector-base breakdown voltage

BV

CBO

IC= -50μA

V--

-0.5mA-5

-

-mA-

-0.07

-0.15

V--

-0.5

-

3.29

4.7

6.11

kW

100-600

MHz

-

250

-

Transition frequency

fT

*1

V

CE

= -10V, IE = 5mA,

f = 100MHz

IE= -50μA

Collector cut-off current

I

CBO

V

CB

= -50V

Emitter cut-off current

I

EBO

V

EB

= -4V

Emitter-base breakdown voltage

BV

EBO

IC / IB= -5mA / -0.5mA

DC current gain

h

FE

VCE= -10V , IC= -5mA

Input resistance

R

1

-

Collector-emitter saturation voltage

V

CE(sat)

2/6

2012.04 - Rev.B

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© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

DTA043T series

lElectrical characteristic curves(Ta = 25°C)

Fig.1 Grounded emitter propagation
characteristics

COLLECTOR CURRENT : Ic (mA)

BASE TO EMITTER VOLTAGE : VBE (V)

Fig.2 Grounded emitter output
characteristics

COLLECTOR CURRENT : I

C

(mA)

COLLECTOR TO EMITTER

VOLTAGE : VCE (V)

Fig.3 DC Current gain
vs. Collector Current

DC CURRENT GAIN : hFE

COLLECTOR CURRENT : IC (mA)

Fig.4 Collector-emitter saturation voltage
vs. Collector Current

COLLECTOR SATURATION

VOLTAGE : V

CE

(sat) (V)

COLLECTOR CURRENT : IC (mA)

-0.001

-0.01

-0.1

-1

-10

0 -0.5 -1 -1.5 -2

VCE= -10V

Ta=125ºC

75

ºC

25ºC

-40ºC

0

-20

-40

-60

-80

-100

0 -2 -4 -6 -8 -10

-0.5mA

0A

-0.6mA

-0.7mA

-0.8mA

-0.9mA

-1.0mA

-0.4mA

-0.2mA

-0.1mA

IB=

-0.3mA

Ta=25ºC

1

10

100

1000

-0.1 -1 -10 -100

VCE= -10.0V

Ta=125ºC

75ºC
25ºC

-40ºC

-0.001

-0.01

-0.1

-1

-0.1 -1 -10 -100

I

C

/I

B

=10

Ta=125ºC

75ºC
25ºC

-40ºC

3/6

2012.04 - Rev.B