ROHM DTA043TUB Technical data

Datasheet

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© 2012 ROHM Co., Ltd. All rights reserved.

DTA043T series

PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)

lOutline

lFeatures

1) Built-In Biasing Resistors

2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).

3) The bias resistors consist of thin-film resistors

with complete isolation to allow negative biasing

lInner circuit

of the input. They also have the advantage of
completely eliminating parasitic effects.

4) Only the on/off conditions need to be set for
operation, making the circuit design easy.

5) Complementary NPN Types :DTC043T series

6) Lead Free/RoHS Compliant.

lApplication

Switching circuit, Inverter circuit, Interface circuit,
Driver circuit

lPackaging specifications

R

1

4.7kW

Parameter

Value

V

CEO

-50V

I

C

-100mA

Part No.

Package

Package

size

(mm)

Taping

code

3,000398

Tape width

(mm)

Basic

ordering

unit (pcs)

Marking

DTA043TM

VMT3

1212

T2L

180

8

8,000

Reel size

(mm)

39

DTA043TEB

EMT3F

1616

TL

180

3,000

39

DTA043TUB

UMT3F

2021

TL

180

8

VMT3

EMT3F

UMT3F

DTA043TM

(SC-105AA)

Collector

Base

Emitter

DTA043TUB

(SC-85)

Collector

Base

Emitter

Collector

Base

Emitter

DTA043TEB

(SC-89)

1/6

2012.04 - Rev.B

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Data Sheet

DTA043T series

lAbsolute maximum ratings (Ta = 25°C)

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current

Collector Power dissipation

Junction temperature
Range of storage temperature

lElectrical characteristics(Ta = 25°C)

*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint

Parameter

Symbol

Values

Unit

V

CBO

-50

V

V

CEO

-50

V

V

EBO

-5

V

I

C

-100

mA

DTA043TM
DTA043TEB

P

C

*2

150

mW

DTA043TUB

200

mW

T

j

150

°C

T

stg

-55 to +150

°C

Unit

Min.

Typ.

Max.

Parameter

Symbol

Conditions

V

Collector-emitter breakdown voltage

BV

CEO

IC= -1mA

V

-50--50

---

Collector-base breakdown voltage

BV

CBO

IC= -50μA

V--

-0.5mA-5

-

-mA-

-0.07

-0.15

V--

-0.5

-

3.29

4.7

6.11

kW

100-600

MHz

-

250

-

Transition frequency

fT

*1

V

CE

= -10V, IE = 5mA,

f = 100MHz

IE= -50μA

Collector cut-off current

I

CBO

V

CB

= -50V

Emitter cut-off current

I

EBO

V

EB

= -4V

Emitter-base breakdown voltage

BV

EBO

IC / IB= -5mA / -0.5mA

DC current gain

h

FE

VCE= -10V , IC= -5mA

Input resistance

R

1

-

Collector-emitter saturation voltage

V

CE(sat)

2/6

2012.04 - Rev.B

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Data Sheet

DTA043T series

lElectrical characteristic curves(Ta = 25°C)

Fig.1 Grounded emitter propagation
characteristics

COLLECTOR CURRENT : Ic (mA)

BASE TO EMITTER VOLTAGE : VBE (V)

Fig.2 Grounded emitter output
characteristics

COLLECTOR CURRENT : I

C

(mA)

COLLECTOR TO EMITTER

VOLTAGE : VCE (V)

Fig.3 DC Current gain
vs. Collector Current

DC CURRENT GAIN : hFE

COLLECTOR CURRENT : IC (mA)

Fig.4 Collector-emitter saturation voltage
vs. Collector Current

COLLECTOR SATURATION

VOLTAGE : V

CE

(sat) (V)

COLLECTOR CURRENT : IC (mA)

-0.001

-0.01

-0.1

-1

-10

0 -0.5 -1 -1.5 -2

VCE= -10V

Ta=125ºC

75

ºC

25ºC

-40ºC

0

-20

-40

-60

-80

-100

0 -2 -4 -6 -8 -10

-0.5mA

0A

-0.6mA

-0.7mA

-0.8mA

-0.9mA

-1.0mA

-0.4mA

-0.2mA

-0.1mA

IB=

-0.3mA

Ta=25ºC

1

10

100

1000

-0.1 -1 -10 -100

VCE= -10.0V

Ta=125ºC

75ºC
25ºC

-40ºC

-0.001

-0.01

-0.1

-1

-0.1 -1 -10 -100

I

C

/I

B

=10

Ta=125ºC

75ºC
25ºC

-40ºC

3/6

2012.04 - Rev.B

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© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

DTA043T series

lDimensions (Unit : mm)

Dimension in mm/inches

VMT3

Patterm of terminal position areas

b1

D

e b

E

H

x S A

A

c

L

Lp

A1

A

S

e1

l1

b2

b3

l1

e

MIN MAX MIN MAX

A 0.45 0.55 0.018 0.022

A1 0.00 0.10 0 0.004

b 0.17 0.27 0.007 0.011

b1 0.27 0.37 0.011 0.015

c 0.08 0.18 0.003 0.007

D 1.10 1.30 0.043 0.051

E 0.70 0.90 0.028 0.035
e

HE 1.10 1.30 0.043 0.051

L 0.10 0.30 0.004 -

Lp 0.20 0.40 0.008 -

x - 0.10 - 0.004

MIN MAX MIN MAX
e1
b2 - 0.37 - 0.015
b3 - 0.47 - 0.019

l1 - 0.50 - 0.02

DIM

MILIMETERS

INCHES

0.80

0.03

DIM

MILIMETERS

INCHES

0.40

0.02

4/6

2012.04 - Rev.B

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© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

DTA043T series

lDimensions (Unit : mm)

Dimension in mm/inches

EMT3F

Patterm of terminal position areas

D

e

E

E

H

A

b

x S A

L

c

Lp

A2A1

S

e1

e

b2

l1

A

MIN MAX MIN MAX

A 0.65 0.85
A1 0.00 0.10 0 0.004
A2 0.60 0.80 0.024 0.031

b 0.21 0.36 0.008 0.014
c 0.08 0.18 0.003 0.007
D 1.50 1.70 0.059 0.067
E 0.76 0.96 0.03 0.038
e

HE 1.50 1.70 0.059 0.067

L

Lp 0.35 0.55 0.014 0.022

x - 0.10 - 0.004

MIN MAX MIN MAX

e1 - 1.05 - 0.041

b2 - 0.46 - 0.018

l1 - 0.65 - 0.026

DIM

0.50

0.02

0.37

0.015

MILIMETERS

INCHES

DIM

MILIMETERS

INCHES

5/6

2012.04 - Rev.B

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© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

DTA043T series

lDimensions (Unit : mm)

Dimension in mm/inches

UMT3F

Patterm of terminal position areas

D

E

H

b

e

x S A

c

L

Lp

A1 A2

S

e1

e

l1

b2

E

A

A

MIN MAX MIN MAX

A 0.85 1.05 0.033 0.041
A1 0.00 0.10 0 0.004
A2 0.80 1.00 0.031 0.039

b 0.27 0.42 0.01 1 0.017

c 0.08 0.18 0.003 0.007

D 1.90 2.10 0.075 0.083

E 1.15 1.35 0.045 0.053

e

HE 2.00 2.20 0.079 0.087

L
Lp 0.43 0.63 0.017 0.025

x - 0.10 - 0.004

MIN MAX MIN MAX
e1
b2 - 0.52 - 0.02

l1 - 0.83 - 0.033

INCHES

0.65

0.03

0.02

DIM

MILIMETERS

0.425

DIM

MILIMETERS

INCHES

1.47

0.058

6/6

2012.04 - Rev.B

Notes

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which can be obtained from ROHM upon request.

Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.

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R1120A