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-100mA/-50V Digital transistors(with built-in resistors)
DTA014TM / DTA014TEB / DTA014TUB
Features Dimensions (Unit : mm)
1) Built-in input resistor enables the direct control of base
terminal by input voltage without external resistor.
(See equivalent circuit)
2) The bias resistors consist of thin-film resistors with complete
isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
VMT3
Abbreviated symbol : 07
EMT3F
(3)
Structure
(1) (2)
PNP epitaxial planar silicon transistor
(Resistor built-in type)
Applications
Inverter, Interface, Driver
UMT3F
Abbreviated symbol : 07
2.0
0.32
(3)
0.4250.425
2.1
1.25
(1) (2)
0.65 0.65
1.3
Abbreviated symbol : 07
0.9
0.13
Packaging specifications Equivalent circuit
Package VMT3 EMT3F
Packaging Type Taping Taping Taping
Type
DTA014ＴM
DTA014ＴEB
Code T2L TL
Basic ordering
unit (pieces)
8000 3000 3000
○
-○
DTA014ＴUB - -
--
UMT3F
TL
-
○
B
B : Base
C : Collector
E : Emitter
R
=10kΩ
1
R
1
Absolute maximum (Ta=25C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation *
V
CBO
V
CEO
V
EBO
I
C
P
D
Limits(DTA014T□)
MEB UB
-50 V
-50 V
-5 mA
-100 mA
150 200
mW
Junction temperature Tj 150
Range of storage temperature Tstg -55 to +150
* Each terminal mounted on a reference land
0.530.53
C
E
Unit
C
C
1/2
2011.08 - Rev.A
DTA014TM / DTA014TEB / DTA014TUB
Electrical characteristics (Ta=25C)
Parameter Min. Typ. Test Conditions
Collector-Base breakdown voltage -50 Collector-Emitter breakdown voltage -50 Emitter-Base breakdown voltage -5 Collector cut-off current - Emitter cut-off current - Collector-Emitter saturation voltage - -0.07
DC current gain 100 -
Transition frequency * - 250
Input resistance 7 10
* Characteristics of built-in transistor
Symbol Max. Unit
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
R
1
Electrical characteristics curves
-V
-V
-V
-500 nA
-500 nA
-0.15 V
600 -
- MHz
13 kΩ
I
=-50uA
C
IC=-1mA
IE=-50uA
VCB=-50V
VEB=-4V
IC=-5mA / IB=-0.5mA
V
=-10V / IC=-5mA
CE
=-10V / IE=5mA
V
CE
f=100MHz
Data Sheet
1000
FE
100
10
DC CURRENT GAIN : h
1
-0.1 -1 -10 -100
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta=-40ºC
COLLECTOR CURRENT : I
VCE=-10V
(mA)
C
COLLECTOR SATURATION VOLTA G E :
-1
IC/IB=10
-0.1
(V)
CE(sat)
V
-0.01
-0.001
-0.1 -1 -10 -100
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta=-40ºC
COLLECTOR CURRNET : I
(mA)
C
Fig.1 DC Current Gain vs. Collector Current Fig.2 Collector Saturation Voltage vs. Collector Current
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2/2
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R1120
A
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