Data Sheet
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1/3
Switching Diode
DAP202UM
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
Features
Construction Structure
Absolute maximum ratings (Ta=25°C)
V
RM
V
V
R
V
I
FM
mA
I
surge
A
°C
°C
Electrical characteristics (Ta=25°C)
V
F
- - 1.2 V
I
F
=100mA
I
R
- - 0.1 μA
V
R
=70V
VR=6V , f=1MHz
VR=6V , IF=5mA , R
=50Ω
Reverse voltage (DC)
80
Taping dimensions (Unit : mm)
Reverse voltage (repetitive)
80
Forward voltage(repetitive peak)
300
Average rectified forward current
100
Surge current(t=1s)
4
Power dissipation
200
Junction temperature
150
Storage temperature
-
55 to +150
Rated in slash put frequency
100
Parameter
dot (year week factory)
1.15±0.1
0.3±0.1
φ1.55±0.05
8.0±0.2
2.0±0.05
4.0±0.1
4.0±0.1
2.2±0.08
φ0.5±0.05
1.75±0.1
0～0.5
3.5±0.05
2.4±0.08
5.5±0.2
2.0±0.1
2.1±0.1
1.3±0.1
1.25±0.1
0.65
0.65
0.32
+0.1
-0.05
0～0.1
0.13±0.05
(1)
(3)
(2)
0.425
0.425
0.9±0.1
0.53±0.1
各リードとも
同寸法
0.53±0.1
Each lead has
same dimensions
High speed switching
1)Small mold, flat lead type. (UMD3F)
2)High reliability
Silicon epitaxial planer
Parameter Limits
ROHM : UMD3F
Symbol Unit
Io mA
Pd mW/Total
Tj
Tstg
f MHz
Forward voltage
Symbol Min. Typ. Max. Unit Conditions
Reverse current
Capacitance between terminals
Reverse recovery time
Ct - - 3.5 pF
trr - - 4.0 ns
L
2011.09 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
DAP202UM
2/3
2011.09 - Rev.A
100
10
(mA)
F
Ta=150°C
1
Ta=125°C
0.1
FORWARD CURRENT:I
0.01
0.001
0 100 200 300 400 500 600 700 800 900 1000
FORWARD VOLTAGE：V
VF-IF CHARACTERISTICS
10
1
TERMINALS:Ct(pF)
CAPACITANCE BETW EEN
Ta=25°C
Ta=75°C
(mV)
F
f=1MHz
100000
10000
(nA)
R
1000
100
10
REVERSE CURRENT:I
1
0.1
0 10 20 30 40 50 60 70 80
910
900
(mV)
F
890
880
870
FORWARD VOLTAGE:V
860
Ta=125°C
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
AVE:884mV
Ta=150°C
Ta=75°C
Ta=25°C
Ta=25°C
IF=100mA
n=30pcs
0.1
0 5 10 15 20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
50
40
(nA)
R
30
20
REVERSE CURRENT:I
10
0
AVE:11nA
IR DISPERSION MAP
Ta=25°C
VR=70V
n=30pcs
850
V
DISPERSION MAP
F
10
Ta=25°C
9
8
7
TERMINALS:Ct(pF)
6
CAPACITANCE BETW EEN
5
4
AVE:5.03pF
Ct DISPERSION MAP
VR=0V
f=1MHz
n=10pcs
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Data Sheet
DAP202UM
3/3
2011.09 - Rev.A
AVE:1.47kV
AVE:2.98kV
Rth(j-a)
Rth(j-c)
20
8.3ms
8.3ms
1cyc
8.3ms
1cyc
I
FSM
(A)
15
FSM
10
PEAK SURGE
5
FORWARD CURRENT:I
0
5
4
(A)
FSM
3
2
PEAK SURGE
AVE:2.50A
I
DISPERSION MAP
FSM
I
FSM
50
IF=IR=100mA
Irr=0.1*I
40
30
20
10
REVERSE RECOVERY TIME:trr (n s)
0
100
(A)
FSM
10
PEAK SURGE
AVE:19.3ns
trr DISPERSION MAP
I
FSM
R
t
FORWARD CURRENT:I
1
0
1 10 100
NUMBER OF CYCLES
I
-CYCLE CHARACTERISTICS
FSM
1000
100
TRANSIENT
THERMAL IMPEDANCE:Rth ( °C/W)
10
0.001 0.01 0.1 1 10 100 1000
Mounted on epoxy board
IM=100mA I
time
1ms
300us
TIME:t(s)
Rth-t CHARACTERISTICS
=10A
F
FORWARD CURRENT:I
1
0.1 1 10 100
TIME:t(ms)
I
-t CHARACTERISTICS
FSM
10
9
8
7
6
5
4
ELECTROSTATIC
3
DISCHARGE TEST ESD(KV)
2
1
0
C=200pF
R=0Ω
ESD DISPERSION MAP
C=100pF
R=1.5kΩ
Notes
Notice
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