ROHM DAN202U Schematic [ru]

Data Sheet

Switching Diode

DAN202U

Applications Dimensions (Unit : mm) Land size figure (Unit : mm)

Ultra high speed switching

Features

1) Small mold type (UMD3).

2) High reliability.

2.0±0.2

0.3±0.1

各リードとも

Each lead has same dimension

同寸法

(3)

0.15±0.05

0.9MIN.

1.3

0.65

1.6

2.1±0.1

1.25±0.1

(2) (1)

（0.65）

Construction Structure

Silicon epitaxial planar

（0.65）

1.3±0.1

0.7±0.1

0.9±0.1

0～0.1

0.1Min

UMD3

ROHM : UMD3
JEDEC : SOT-323
JEITA : SC-70

dot (year week factory)

Taping specifications (Unit : mm)

4.0±0.1

φ1.55±0.05

2.4±0.1

5.5±0.2

φ0.5±0.05

4.0±0.1

2.25±0.1
　　　　 0

2.0±0.05

Absolute maximum ratings (Ta=25°C)

Parameter Limits
Reverse voltage (repetitive peak) 80
Reverse voltage (DC) 80
Forward current (Single) 300

Average rectified forward current (Single)

Surge current (t=1us) 4
Power dissipation 200
Junction temperature 150
Storage temperature

Symbol Unit

V

RM

V

R

I

FM

Io mA

I

surge

100

V
V

mA

A

Pd mW

Tj °C

Tstg °C

55 to 150

0.8MIN

1.75±0.1

3.5±0.05

0～0.1

0.3±0.1

8.0±0.2

2.4±0.1

1.25±0.1

Electrical characteristics (Ta=25°C)

Parameter

Symbol Min. Typ. Max. Unit Conditions
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time

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© 2011 ROHM Co., Ltd. All rights reserved.

V

F

I

R

- - 1.2 V

- - 0.1 μA
Ct - - 3.5 pF
trr - - 4 ns

1/2

I

=100mA

F

V

=70V

R

V

=6V , f=1MHz

R

VR=6V , IF=5mA , RL=50Ω

2011.06 - Rev.A

www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.

Data Sheet

DAN202U

100

10

1

FORWARD CURRENT:IF(mA)

0.1

950

940

930

920

910

FORWARD VOLTAGE:VF(mV)

900

Ta=150℃

0 100 200 300 400 500 600 700 80 0 900 1 00

FORWARD VOLTAGE：VF(mV)

VF-IF CHARACTERISTICS

Ta=75℃

Ta=125℃

AVE:921.7mV

Ta=25℃

Ta=-25℃

Ta=25℃

IF=100mA

n=30pcs

10000

1000

100

10

1

REVERSE CURRENT:IR(nA)

0.1

0.01

0

0 1020304050607080

REVERSE VOLTAGE：VR(V)

VR-IR CHARACTERISTICS

100

90

80

70

60

50

40

30

20

REVERSE CURRENT:IR(nA)

10

0

Ta=150℃

AVE:9.655nA

Ta=125℃

Ta=75℃

Ta=25℃

Ta=-25℃

Ta=25℃
VR=80V
n=10pcs

10

1

TERMINALS:Ct(pF)

CAPACITANCE BETWEEN

0.1
0 5 10 15 20

REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS

10

9

8

7

6

5

4

3

TERMINALS:Ct(pF)

2

CAPACITANCE BETWEEN

1

0

AVE:1.17pF

f=1MHz

Ta=25℃

VR=6V

f=1MHz

n=10pcs

VF DISPERSION MAP

20

15

10

PEAK SURGE

5

FORWARD CURRENT:IFSM(A)

0

IFSM DISRESION MAP

100

10

PEAK SURGE

FORWARD CURRENT:IFSM(A)

1

0.1 1 10 100

IFSM-t CHARACTERISTICS

Ifsm

AVE:3.50A

Ifsm

TIME:t(ms)

8.3ms

IR DISPERSION MAP

10

1ms

300us

time

Ta=25℃

VR=6V

IF=5mA
RL=50Ω
n=10pcs

Rth(j-a)

Rth(j-c)

1cyc

t

9

8

7

6

5

4

3

2

1

REVERSE RECOVERY TIME:trr(ns)

0

1000

100

TRANSIENT

10

THAERMAL IMPEDANCE:Rth (℃/W)

1

0.001 0.01 0.1 1 10 100 1000

AVE:1.93ns

trr DISPERSION MAP

Mounted on epoxy board

IM=1mA IF=10mA

TIME:t(s)

Rth-t CHARACTERISTICS

5

4

3

2

PEAK SURGE

1

FORWARD CURRENT:IFSM(A)

0

110100

10

9

8

7

6

5

4

3

ELECTROSTATIC

2

DDISCHARGE TEST ESD(KV)

1

0

Ct DISPERSION MAP

Ifsm

8.3ms

8.3ms
1cyc

NUMBER OF CYCLES

IFSM-CYCLE CHARACTERISTICS

AVE:2.54kV

AVE:0.97kV

C=200pF

R=0Ω

ESD DISPERSION MAP

C=100pF
R=1.5kΩ

2/2

2011.06 - Rev.A