High Reliability Serial EEPROMs
WL-CSP EEPROM family
Microwire Bus
BU9891GUL-W
● Description
BU9891GUL-W is serial EEPROM of serial 3-line interface method
● Features
1) 3-line communications of chip select, serial clock, serial data input / output (the case where input and output are shared)
2) Actions available at high speed 2MHz clock (2.5~5.5V)
3) Speed write available (write time 5ms max.)
4) 1.7~5.5V single power source action
5) Address auto increment function at read action
6) Write mistake prevention function
Write prohibition at power on
Write prohibition by command code
Write mistake prevention function at low voltage
7) Program cycle auto delete and auto end function
8) Program condition display by READY / BUSY
9) Low current consumption
At write action (at 5V): 1.2mA (Typ.)
At read action (at 5V): 0.3mA (Typ.)
At standby action (at 5V): 0.1μ A (Typ.) (CMOS input)
10) Data retention for 40 years
11) Data rewrite up to 100,000 times
12) Data at shipment all addresses FFFFh
Capacity Bit format Type Power source voltage Package type
No.10001EAT10
4Kbit 256× 16 BU9891GUL-W 1.7~5.5V VCSP50L1
● Absolute Maximum Ratings(Ta=25℃)
Parameter Symbol Ratings Unit
Impressed voltage VCC -0.3~+6.5 V
Permissible dissipation Pd 220 (VCSP50L1 ) *1 mW
Storage temperature range Tstg -65~+125 ℃
Action temperature range Topr -40~+85 ℃
Terminal voltage ‐ -0.3~VCC+0.3 V
* When using at Ta=25℃ or higher, 2.2mW (to be reduced per 1℃.
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© 2010 ROHM Co., Ltd. All rights reserved.
1/17
2010.07 - Rev.
BU9891GUL-W
● Recommended action conditions
Parameter Symbol Ratings Unit
Power source voltage VCC 1.7~5.5
Input voltage VIN 0~VCC
● Memory cell characteristics (VCC=1.7~5.5V)
Parameter
Min. Typ. Max.
Limit
Technical Note
V
Unit Condition
Number of data rewrite times *1 100,000 - - Times
Data hold years *1 40 - - Years
○ Shipment data all address FFFFh
*1 Not 100% TESTED
● Electrical characteristics
(Unless otherwise specified, VCC=1.7~5.5V, Ta=-40~+85℃)
Parameter
Symbol
“L” input voltage 1 V
“H” input voltage 1 V
“L” output voltage 1 V
“L” output voltage 2 V
“H” output voltage 1 V
“H” output voltage 2 V
Min. Typ. Max.
-0.3 - 0.2×VCC V
IL1
0.8× VCC - VCC+0.3 V
IH1
0 - 0.4 V
OL1
0 - 0.2 V
OL2
2.4 - VCC V
OH1
VCC-0.2 - VCC V
OH2
Limits
Input leak current ILI -1 - +1 µA
Output leak current ILO -1 - +1 µA
Unit
Ta =2 5℃
Ta =2 5℃
Condition
IOL=2.1mA, 4.0V≦VCC≦5.5V
I
=100μ A
OL
IOH=-0.4mA, 4.0V≦VCC≦5.5V
I
=-100μ A
OH
VIN=0V~VCC
V
=0V~VCC, CS=0V
OUT
I
- - 3.0 mA
CC1
Current consumption at action
I
- - 1.5 mA
CC2
Standby current ISB - - 2 µA
◎ Radiation resistance design is not made.
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2/17
f
=2MHz, t
SK
f
=2MHz (READ)
SK
=5ms (WRITE)
E/W
CS=0V, DO=OPEN
2010.07 - Rev.
BU9891GUL-W
Technical Note
● Action timing characteristics
(Ta=-40~+85℃ , VCC=2.5~5.5V)
Parameter Symbol
2.5V≦ VCC≦ 5.5V
Min. Typ. Max.
Unit
SK frequency fSK - - 2 MHz
SK “H” time t
SK “L” time t
230 - - ns
SKH
230 - - ns
SKL
CS “L” time tCS 200 - - ns
CS setup time t
DI setup time t
CS hold time t
DI hold time t
Data “1” output delay time t
Data “0” output delay time t
200 - - ns
CSS
100 - - ns
DIS
0 - - ns
CSH
100 - - ns
DIH
- - 200 ns
PD1
- - 200 ns
PD0
Time from CS to output establishment tSV - - 150 ns
Time from CS to High-Z tDF - - 150 ns
Write cycle time t
- - 5 ms
E/W
(Ta=-40~+85℃ , VCC=1.7~2.5V)
Parameter Symbol
1.7V≦ VCC≦ 2.5V
Min. Typ. Max.
Unit
SK frequency fSK - - 500 kHz
SK “H” time t
SK “L” time t
0.8 - - us
SKH
0.8 - - us
SKL
CS “L” time tCS 1 - - us
CS setup time t
DI setup time t
CS hold time t
DI hold time t
Data “1” output delay time t
Data “0” output delay time t
200 - - ns
CSS
100 - - ns
DIS
0 - - ns
CSH
100 - - ns
DIH
- - 0.7 us
PD1
- - 0.7 us
PD0
Time from CS to output establishment tSV - - 0.7 us
Time from CS to High-Z tDF - - 200 ns
Write cycle time t
- - 5 ms
E/W
● Sync data input / output timing
DO(RE AD
DO(WRITE
SK
DI
S
tCSS tSKH tSKL
tDIS tDIH
tPD0
tCS H
tPD1
tDF
S TAT US VA LI D
Fig.1 Sync data input / output timing
○Data is taken by DI sync with the rise of SK.
○At read action, data is output from DO in sync with the rise of SK.
○The status signal at write (READY / BUSY) is output after tCS from the fall of CS after write command input, at the area
DO where CS is “H”, and valid until the next command start bit is input. And, while CS is “L”, DO becomes High-Z.
○ After completion of each mode execution, set CS “L” once for internal circuit reset, and execute the following action mode.
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© 2010 ROHM Co., Ltd. All rights reserved.
3/17
2010.07 - Rev.
BU9891GUL-W
● BU9891GUL-W Characteristic data (The following characteristic data are Typ. values.)
Technical Note
6
Ta=-40℃
5
Ta=25℃
Ta=85℃
4
3
VIH[V]
2
1
0
0123456
SPEC
VCC[V]
Fig.2 H input voltage VIL(CS,SK,DI)
1
Ta=-40℃
Ta=25℃
0.8
Ta=85℃
0.6
VOL[V]
0.4
SPEC
0.2
0
012345
IOL[mA]
6
Ta=-40℃
5
Ta=25℃
Ta=85℃
4
3
VIL[V]
2
1
0
0123456
VCC[V]
SPEC
Fig.3 L input voltage VIL(CS,SK,DI)
1
Ta=-40℃
0.8
Ta=25℃
Ta=85℃
0.6
VOL[V]
0.4
0.2
0
012345
SPEC
IOL[mA]
Fig.5 L output voltage VOL-IOL(Vcc=2.5V) Fig.6 L output voltage VOL-IOL(Vcc=4.0V)
1
Ta=-40℃
Ta=25℃
0.8
Ta=85℃
0.6
VOL[V]
0.4
SPEC
0.2
0
012345
IOL[mA]
Fig.4 L output voltage VOL-IOL(Vcc=1.8V)
5
Ta=-40℃
Ta=25℃
4
Ta=85℃
3
VOH[V]
2
SPEC
1
0
0 0.4 0.8 1.2 1.6
IOH[mA]
Fig.7 H output voltage VOH-IOH(Vcc=1.8V)
5
Ta=-40℃
Ta=25℃
4
Ta=85℃
3
VOH[V]
2
SPEC
1
0
0 0.4 0.8 1.2 1.6
IOH[mA]
Fig.8 H output voltage VOH-IOH(Vcc=2.5V)
1.2
1
Ta=-40℃
0.8
Ta=25℃
Ta=85℃
0.6
ILO[μA]
0.4
0.2
0
0123456
SPEC
VCC[V]
Fig.11 Output leak current ILO (DO) Fig.12 Current consumption at WRITE action
5
4
3
Ta=-40℃
Ta=25℃
Ta=85℃
SPEC
IOH[mA]
VOH[V]
2
1
0
0 0.4 0.8 1.2 1.6
Fig.9 H output voltage VOH-IOH(Vcc=4.0V)
5
fSK=2MHz
DATA=0000h
4
SPEC
3
Ta=-40℃
Ta=25℃
2
Ta=85℃
ICC1(WRITE)[mA]
1
0
0123456
VCC[V]
ICC1 (WRITE, fSK=2MHz)
1.2
1
Ta=-40℃
0.8
Ta=25℃
Ta=85℃
0.6
ILI[μA]
0.4
0.2
0
0123456
SPEC
VCC[V]
Fig.10 Input leak current ILI(CS,SK,DI)
2.5
fSK=2MHz
2
DATA=0000h
SPEC
1.5
Ta=-40℃
Ta=25℃
1
Ta=85℃
ICC2(READ)[mA]
0.5
0
0123456
Fig.13 Consumption current at READ action
VCC[V]
ICC2 (READ, fSK=2MHz)
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© 2010 ROHM Co., Ltd. All rights reserved.
4/17
2010.07 - Rev.
BU9891GUL-W
● BU9891GUL-W Characteristic data (The following characteristic data are Typ. values.)
Technical Note
5
fSK=500kHz
DATA=0000h
4
SPEC
3
Ta=-40℃
Ta=25℃
2
Ta=85℃
ICC1(WRITE)[mA]
1
0
0123456
Fig.14 Current consumption at WRITE
100
10
1
fSK[MHz]
Ta=-40℃
0.1
Ta=25℃
Ta=85℃
0.01
0123456
VCC[V]
action
SPEC
VCC[V]
Fig.17 SK frequency fSK Fig.18 SK high time tSKH Fig.19 SK low time tSKL
2.5
fSK=500kHz
2
DATA=0000h
SPEC
1.5
Ta=-40℃
Ta=25℃
1
Ta=85℃
ICC2(READ)[mA]
0.5
0
0123456
Fig.15 Consumption current at READ action
ICC2 (READ, fSK=500kHz)
1
VCC[V]
SPEC
0.8
Ta=-40℃
Ta=25℃
0.6
Ta=85℃
tSKH [μs]
0.4
SPEC
0.2
0
0123456
VCC[V]
2.5
SPEC
2
Ta=-40℃
Ta=25℃
1.5
Ta=85℃
ISB[μA]
1
0.5
0
0123456
Fig.16 Consumption current at standby
1
VCC[V]
action ISB
SPEC
0.8
Ta=-40℃
0.6
Ta=25℃
Ta=85℃
tSKL[μs]
0.4
SPEC
0.2
0
0123456
VCC[V]
1.2
Ta=-40℃
SPEC
VCC[V]
Ta=25℃
Ta=85℃
1
0.8
0.6
tCS[μs]
0.4
0.2
0
SPEC
0123456
Fig.20 CS low time tCS Fig.21 CS hold time tCSH Fig.22 CS setup time tCSS
150
100
50
tDIH[ns]
Ta=-40℃
Ta=25℃
0
Ta=85℃
-50
0123456
VCC[V]
SPEC
Fig.23 DI hold time tDIH Fig.24 DI setup time tDIS Fig.25 Data “0 ” output delay time tPD0
50
0
Ta=25℃
-50
Ta=85℃
tCSH[ns]
-100
-150
-200
0123456
150
100
Ta=-40℃
Ta=25℃
Ta=85℃
50
tDIS[ns]
0
-50
0123456
VCC[V]
VCC[V]
SPECTa=-40℃
SPEC
300
200
Ta=-40℃
Ta=25℃
100
Ta=85℃
tCSS[ns]
0
-100
-200
0123456
1
0.8
0.6
tPD0 [μs]
0.4
0.2
0
0123456
VCC[V]
SPEC
SPEC
VCC[V]
Ta=-40℃
Ta=25℃
Ta=85℃
SPEC
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© 2010 ROHM Co., Ltd. All rights reserved.
5/17
2010.07 - Rev.
BU9891GUL-W
● BU9891GUL-W Characteristic data (The following characteristic data are Typ. values.)
Technical Note
1
Ta=-40℃
SPEC
VCC[V]
VCC[V]
Ta=25℃
Ta=85℃
SPEC
0.8
0.6
tPD1 [μs]
0.4
0.2
0
Fig.26 Output data “1 ” delay time tPD1 Fig.27 Time from CS to output establishment tSV
6
5
4
3
tE/W[ms]
2
1
0
SPEC
0123456
Ta=-40℃
Ta=25℃
Ta=85℃
0123456
1
Ta=-40℃
SPEC
SPEC
VCC[V]
Ta=25℃
Ta=85℃
0.8
0.6
tSV[μs]
0.4
0.2
0
0123456
250
200
SPEC
150
tDF [ns]
100
50
0
0123456
Fig.28 Time from CS to High-Z tDF
SPEC
VCC[V]
Ta=-40℃
Ta=25℃
Ta=85℃
Fig.29 Write cycle time tE/W
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© 2010 ROHM Co., Ltd. All rights reserved.
6/17
2010.07 - Rev.