2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S
Transistors
General Purpose Transistor (50V, 0.15A)
2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S
zFeatures
1) High DC current gain.
2) High emitter-base voltage. (V
CBO=12V)
3) Low saturation voltage.
(Typ. V
CE(sat)=0.3V at IC/IB=50mA/5mA)
zAbsolute maximum ratings (Ta=25°C)
Collector-base voltage
Parameter Symbol
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
2SD2654, 2SD2707
2SD2351, 2SD2226K
2SD2227S
Junction temperature
Storage temperature
∗Single
pulse Pw=100ms
V
V
V
P
Tstg
CBO
CEO
EBO
I
Tj
C
C
Limits
60
50
12
0.15
0.2
0.15
0.2
0.3
150
−55 to +150
Unit
V
V
V
A (DC)
A (Pulse)
W
°C
°C
zPackaging specifications and h
Type
package
h
FE
Marking
Code
Basic ordering unit (pleces)
Denotes
h
FE
∗
2SD2707
VMT3
VW
BJ
∗
T2L
8000
2SD2654
EMT3
VW
BJ
TL
3000
FE
2SD2351
∗
UMT3
VW
BJ
T106
3000
∗
2SD2226K
SMT3
VW
BJ
∗
T146
3000
2SD2227S
Rev.A 1/3
zExternal dimensions (Unit : mm)
2SD2707
ROHM : EMT3
2SD2654
∗
ROHM : EMT3
EIAJ : SC-75A
0.3
0.15
0.1Min.
2SD2351
0.3
SPT
VW
TP
5000
−
ROHM : UMT3
EIAJ : SC-70
2SD2226K
ROHM : SMT3
EIAJ : SC-59
2SD2227S
ROHM : SPT
EIAJ : SC-72
Each lead has same dimensions
0.4
Each lead has same dimensions
1.2
0.80.2 0.2
(2)
1.2
0.32
(3)
(1)
0.22
0.5
0.13
0.2
(1)
(2)
(3)
0.8
0.2
1.6
0.55
0~0.1
)
1
(
)
2
)
(
3
(
1.25
2.1
0.15
0.1Min.
0.15
0.3Min.
3
)
15Min.
(
(1) (2) (3)
Taping specifications
0.2
0~0.1
)
1
(
)
2
)
(
3
(
1.6
2.8
0~0.1
42
3Min.
0.45
2.5
0.5
5
0.8
0.40.4
(1) Base
(2) Emitter
(3) Collector
1.6
1.0
0.50.5
0.7
(1) Emitter
(2) Base
(3) Collector
0.65
2.0
1.3
0.65
0.9
0.7
0.95 0.95
0.8
0.45
1.9
2.9
1.1
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Collector
(3) Base
2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S
Transistors
zElectrical characteristics (Ta = 25°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗ Measured using pulse current.
zElectrical characteristics curves
2.0
Ta=25°C
1.6
(mA)
2.0µA
C
1.8µA
1.6µA
1.4µA
1.2
0.8
0.4
COLLECTOR CURRENT : I
0
0
COLLECTOR TO EMITTER VOLTAGE : V
Fig.1 Grounded emitter output
characteristics ( Ι )
Parameter Symbol Min. Typ. Max. Unit Conditions
1.2µA
1.0µA
0.8µA
0.6µA
0.4µA
0.2µA
0.20.1 0.3 0.4
IB=0
CBO
BV
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
FE
h
f
T
Cob
0.5
CE
(V)
60
−
50
12
−
−
−
820
−
−
200
500µA
450µA
160
(mA)
400µA
C
350µA
300µA
120
80
40
COLLECTOR CURRENT : I
0
020
COLLECTOR TO EMITTER VOLTAGE : V
−
−
−
−
−
0.3
−
0.3
−
0.3
−
2700
−
250
−
3.5
−
Ta=25°C
Measured
using pulse current
Fig.2 Grounded emitter output
characteristics ( ΙΙ )
C
=10µA
V
I
C
=1mA
I
V
E
=10µA
I
V
CB
=50V
V
µA
EB
=12V
V
µA
C
/IB=50mA/5mA
I
V
−
CE/IC
=5V/1mA
V
VCE=5V, IE=−10mA, f=100MHz
MHz
CB
=5V, IE=0A, f=1MHz
V
pF
A
250µ
µA
200
A
µ
150
A
100µ
50µA
841216
IB=0
CE
(V)
200
VCE=5V
100
50
(mA)
C
20
10
5
2
1
0.5
COLLECTOR CURRENT : I
0.2
0 0.40.2
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.3 Grounded emitter propagation
characteristics
∗
∗
∗
C
°
C
25°
25
−
Ta=100
0.6 0.8 1.0
°C
1.41.2
10000
5000
2000
FE
1000
500
200
100
50
DC CURRENT GAIN : h
20
10
0.2 1 2 50.5 10 20 50100
COLLECTOR CURRENT : I
Ta=25°C
Measured
using pulse current
Fig.4 DC current gain vs.
collector current ( Ι )
C
(mA)
VCE=10V
5V
3V
200
10000
5000
2000
FE
1000
500
200
100
50
DC CURRENT GAIN : h
20
10
0.2 1 2 50.5 10 20 50100
Ta=100
C
°
25
−25
COLLECTOR CURRENT : I
Measured
using pulse current
C
°
C
°
VCE=5V
Fig.5 DC current gain vs.
collector current ( ΙΙ )
C
(mA)
1000
(mV)
500
CE(sat)
200
100
COLLECTOR SATURATION VOLTAGE : V
200
IC / IB=50
50
20
10
5
2
1
0.2 200
20
10
12 50.5 10 20 50 100
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation voltage
vs. collector current ( Ι )
Ta=25
°C
Rev.A 2/3
2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S
Transistors
1000
(mV)
500
CE(sat)
200
100
50
20
10
5
2
1
COLLECTOR SATURATION VOLTAGE : V
0.2 1 2 50.5 10 20 50 100
Fig.7 Collector-emitter saturation voltage
vs. collector current ( ΙΙ )
1000
500
200
(MHz)
T
100
50
20
10
5
Ta=25°
TRANSITION FREQUENCY : f
CE
V
2
Measured
using pulse current
1
−1 −1000
B
I
/
C
I
Ta=100°C
25°C
−25°C
COLLECTOR CURRENT : IC (mA)
C
=5V
−2 −5 −10 −20 −50 −100−200 −500
EMITTER CURRENT : IE (mA)
Fig.10 Gain bandwidth product
vs. emitter current
=10
10000
(mV)
5000
BE(sat)
2000
1000
500
200
100
50
20
10
COLLECTOR SATURATION VOLTAGE : V
200
0.2 1 2 50.5 10 20 50 100
COLLECTOR CURRENT : IC (mA)
Fig.8 Base-emitter saturation voltage
vs. collector current ( Ι )
1000
(pF)
500
ob
200
100
50
20
10
5
2
COLLECTOR OUTPUT CAPACITANCE : C
1
0.2 0.5 1 2 5 10 20 50
0.1 100
COLLRCTOR TO BASE VOLTAGE : V
Fig.11 Collector output capacitance
vs. collector-base voltage
IC/IB=10
20
°C
Ta=25
50
10000
(mV)
5000
BE(sat)
2000
1000
500
200
100
50
20
10
COLLECTOR SATURATION VOLTAGE : V
200
0.2 1 2 50.5 10 20 50 100
Ta= −25°C
25°C
COLLECTOR CURRENT : IC (mA)
Fig.9 Base-emitter saturation voltage
vs. collector current ( ΙΙ )
100°C
=10
B
/I
C
I
200
Ta=25°
f=1MHz
=0A
E
I
C
CB
(V)
100
50
20
10
5
Ron : (Ω)
2
1
0.5
0.2
0.1
0.02 0.05 0.1 0.2 0.5 1 2 5
0.01 10
IB (mA)
Ta=25
f=1kHz
=100mV(rms)
i
V
=1k
L
R
Fig.12 Output on resistance
vs. base current
C
°
Ω
Rev.A 3/3
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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