ROHM 2SD2700 Technical data

2SD2700

Transistors

Low frequency amplifier

2SD2700

zApplication

Low frequency amplifier
Driver

zFeatures

1) A collector current is large.

2) V

CE(sat) ≦ 180mV

C = 1A / IB = 50mA

at I

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol

Collector-base voltage
Collector-emitter voltage

Emitter-base voltage
Collector current

Power dissipation
Junction temperature

Range of storage temperature

∗1 Single pulse, PW=1ms
∗2 Mounted on a 25

t

×25×

0.8mm Ceramic substrate

CBO

V
V

CEO

V

EBO

I

I

CP

P

Tj

Tstg

C

C

Limits

15
12

6
2
4

0.4

∗2

0.8

150

−55 to +150

zElectrical characteristics (T a=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance

∗ Pulsed

CBO

BV

CEO

BV

EBO

BV

CBO

I

EBO

I

CE(sat)

V

FE

h

f

T

Cob − 20 −

15
12

6

−−

−−

− 90

270 − 680

−

zPackaging specifications

Type
2SD2700

Package
Code
Basic ordering unit (pieces)

Taping

TL

3000

Rev.B 1/2

zDimensions (Unit : mm)

ROHM : TUMT3

Unit

V
V
V
A

∗1

A

W

°C
°C

−−

−−

−−

100
100
180 mV

360

MHz

−

Abbreviated symbol : FW

V

I

C

=10µA

V

I

C

=1mA

V

E

=10µA

I
nA VCB=15V
nA VEB=6V

IC=1A, IB=50mA

− V

CE

=2V, IC=200mA

VCE=2V, IE=−200mA, f=100MHz

CB

=10V, IE=0A, f=1MHz

V

pF

0.2Max.

∗

(1) Base
(2) Emitter
(3) Collector

∗

2SD2700

Transistors

zElectrical characteristic curves

1000

FE

100

DC CURRENT GAIN : h

10

0.001 0.01 0.1 1 10

Ta=100°C

Ta=25°C

Ta=−40°C

COLLECTOR CURRENT : I

Fig.1 DC current gain

vs. collector current

10

(A)

C

1

Ta=100°C

0.1

Ta=25°C

VCE=2V
Pulsed

C

(A)

VCE=2V
Pulsed

1

IC/IB=20/1
V

CE

=2V

(V)

Pulsed

CE(sat)

0.1

Ta=100°C

0.01

COLLECTOR TO EMITTER

SATURATION VOLTAGE : V

0.001

0.001 0.01 0.1 1 10
COLLECTOR CURRENT : I

Fig.2 Base-emitter saturation voltage

vs. collector current

1000

(MHz)

T

100

Ta=25°C

Ta=−40°C

C

(A)

Ta=25°C
V

CE

=2V

f=100MHz

1

(V)

Ta=25°C

Pulsed

CE(sat)

0.1

IC/IB=50/1

0.01

IC/IB=20/1

IC/IB=10/1

0.001

0.001 0.01 0.1 1 10
COLLECTOR CURRENT : I

COLLECTOR SATURATION VOLTAGE : V

Fig.3 Collector-emitter saturation voltage

vs. collector current

1000

100

C

(A)

Ta=25°C

VCE=5V
f=100MHz

tstg

Ta=−40°C

0.01

COLLECTOR CURRENT : I

0.001
0 0.5 1 1.5

BE

BASE TO EMITTER CURRENT : V

(V)

Fig.4 Grounded emitter propagation

characteristics

1000

100

10

1

EMITTER INPUT CAPACITANCE : Cib (pF)

EMITTER TO BASE VOLTAGE : V

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

COLLECTOR TO BASE VOLTAGE : V

Cib

1 10 1000.1

Fig.7 Collector output capacitance

vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage

Cob

Ta=25˚C

I

C

=

0A

f=1MHz

EB

TRANSITION FREQUENCY : f

10

0.001 0.01 0.1 1 10

V)

(

CB

V)

(

EMITTER CURRENT : I

E

(A)

Fig.5 Gain bandwidth product

vs. emitter current

10

SWITCHING TIME : (ns)

1

0.01 0.1 1 10
COLLECTOR CURRENT : I

tdon
tf

tr

C

(A)

Fig.6 Switching time

Rev.B 2/2