ROHM 2SD2700 Technical data
2SD2700
Transistors
Low frequency amplifier
2SD2700
zApplication
Low frequency amplifier
Driver
zFeatures
1) A collector current is large.
2) V
CE(sat) ≦ 180mV
C = 1A / IB = 50mA
at I
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Single pulse, PW=1ms
∗2 Mounted on a 25
t
×25×
0.8mm Ceramic substrate
CBO
V
V
CEO
V
EBO
I
I
CP
P
Tj
Tstg
C
C
Limits
15
12
6
2
4
0.4
∗2
0.8
150
−55 to +150
zElectrical characteristics (T a=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
∗ Pulsed
CBO
BV
CEO
BV
EBO
BV
CBO
I
EBO
I
CE(sat)
V
FE
h
f
T
Cob − 20 −
15
12
6
−−
−−
− 90
270 − 680
−
zPackaging specifications
Type
2SD2700
Package
Code
Basic ordering unit (pieces)
Taping
TL
3000
Rev.B 1/2
zDimensions (Unit : mm)
ROHM : TUMT3
Unit
V
V
V
A
∗1
A
W
°C
°C
−−
−−
−−
100
100
180 mV
360
MHz
−
Abbreviated symbol : FW
V
I
C
=10µA
V
I
C
=1mA
V
E
=10µA
I
nA VCB=15V
nA VEB=6V
IC=1A, IB=50mA
− V
CE
=2V, IC=200mA
VCE=2V, IE=−200mA, f=100MHz
CB
=10V, IE=0A, f=1MHz
V
pF
0.2Max.
∗
(1) Base
(2) Emitter
(3) Collector
∗
2SD2700
Transistors
zElectrical characteristic curves
1000
FE
100
DC CURRENT GAIN : h
10
0.001 0.01 0.1 1 10
Ta=100°C
Ta=25°C
Ta=−40°C
COLLECTOR CURRENT : I
Fig.1 DC current gain
vs. collector current
10
(A)
C
1
Ta=100°C
0.1
Ta=25°C
VCE=2V
Pulsed
C
(A)
VCE=2V
Pulsed
1
IC/IB=20/1
V
CE
=2V
(V)
Pulsed
CE(sat)
0.1
Ta=100°C
0.01
COLLECTOR TO EMITTER
SATURATION VOLTAGE : V
0.001
0.001 0.01 0.1 1 10
COLLECTOR CURRENT : I
Fig.2 Base-emitter saturation voltage
vs. collector current
1000
(MHz)
T
100
Ta=25°C
Ta=−40°C
C
(A)
Ta=25°C
V
CE
=2V
f=100MHz
1
(V)
Ta=25°C
Pulsed
CE(sat)
0.1
IC/IB=50/1
0.01
IC/IB=20/1
IC/IB=10/1
0.001
0.001 0.01 0.1 1 10
COLLECTOR CURRENT : I
COLLECTOR SATURATION VOLTAGE : V
Fig.3 Collector-emitter saturation voltage
vs. collector current
1000
100
C
(A)
Ta=25°C
VCE=5V
f=100MHz
tstg
Ta=−40°C
0.01
COLLECTOR CURRENT : I
0.001
0 0.5 1 1.5
BE
BASE TO EMITTER CURRENT : V
(V)
Fig.4 Grounded emitter propagation
characteristics
1000
100
10
1
EMITTER INPUT CAPACITANCE : Cib (pF)
EMITTER TO BASE VOLTAGE : V
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
COLLECTOR TO BASE VOLTAGE : V
Cib
1 10 1000.1
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Cob
Ta=25˚C
I
C
=
0A
f=1MHz
EB
TRANSITION FREQUENCY : f
10
0.001 0.01 0.1 1 10
V)
(
CB
V)
(
EMITTER CURRENT : I
E
(A)
Fig.5 Gain bandwidth product
vs. emitter current
10
SWITCHING TIME : (ns)
1
0.01 0.1 1 10
COLLECTOR CURRENT : I
tdon
tf
tr
C
(A)
Fig.6 Switching time
Rev.B 2/2
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