ROHM 2SD2673 Technical data
Transistors
Low frequency amplifier
2SD2673
zApplicat ion
Low frequency amplifier
Driver
zFeatures
1) A collector current is large. (3A)
2) V
CE(sat)
: max. 250mV
At I
C
= 1.5A / IB = 30mA
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Single pulse, PW=1ms
∗2 Mounted on a 25×25
t
×
0.8mm Ceramic substrate
CBO
V
V
CEO
V
EBO
I
I
CP
P
Tj
Tstg
C
C
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗ Pulsed
Limits
30
30
6
3
6
500
∗2
1W
150
−55 to +150
BV
BV
BV
I
I
CE(sat)
V
CBO
EBO
h
f
CBO
CEO
EBO
FE
T
30
30
270 − 680
Cob − 40 −
zExternal dimensions (Unit : mm)
TSMT3
(1) Base
(2) Emitter
(3) Collector
zPackaging specifications
Unit
V
Type
V
V
A
A
mW
∗1
2SD2673
°C
°C
−−
−−
6
−−
−−
− 120
−
−−
200
V
V
V
100
100
nA VCB=30V
nA VEB=6V
250 mV
− V
MHz
−
pF
2SD2673
2.9
0.4
(3)
(2)
(1)
0.950.95
1.9
Package
Code
Basic ordering unit (pieces)
C
=10µA
I
IC=1mA
E
=10µA
I
IC=1.5A, IB=30mA
CE
VCE=2V, IE=−200mA, f=100MHz
V
CB
1.0MAX
0.85
0.7
2.8
1.6
0
~
0.1
0.6
~
0.3
0.16
Each lead has same dimensions
=2V, IC=200mA
∗
=10V, IE=0A, f=1MHz
Taping
TL
3000
∗
Rev.D 1/2
Transistors
0
)
e
0
0
)
e
n
0
0
)
0
)
0
10000
SWITCHING TIME : (ns)
zElectrical characteristic curves
1000
Ta=25°C
FE
Ta=−40°C
100
Ta=125°C
2SD2673
1000
(V
CE(sat)
100
Ta=−40°C
(V)
BE (sat)
(V
CE (sat)
1
0.1
Ta=25°C
Ta=125°C
IC/IB=20/1
Pulsed
IC/IB=20/1
Pulsed
DC CURRENT GAIN : h
VCE=−2V
Pulsed
10
0.001 0.01 0.1 1 1
COLLECTOR CURRENT : I
C
(A)
Fig.1 DC current gain
vs. collector current
10
(A)
C
1
Ta=125°C
0.1
Ta=25°C
0.01
COLLECTOR CURRENT : I
0.001
011
BASE TO EMITTER CURRENT : V
Ta=−40°C
VBE=2V
Pulsed
Fig.4 Grounded emitter propagatio
characteristics
BE
(V)
°C
Ta=25
CE
=−12V
V
IC/IB=20/1
Pulsed
1000
tstg
100
tr
tdon
0.01
0.001
0.001 0.01 0.1 1
BASE SATURATION VOLTAGE : V
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
Ta=−40°C
1
C
(A)
Fig.2 Collector-emitter saturation voltag
base-emitter saturation voltage
vs. collector current
1000
Cib
Cob
100
10
0.01 0.1 1 1
EMITTER INPUT CAPACITANCE : Cib (pF)
EMITTER TO BASE VOLTAGE : V
COLLECTOR OUTPUT CAPACITANCE : Cob (pF
COLLECTOR TO BASE VOLTAGE : V
Ta
=
25
IC=
0A
f=1MHz
EB
°C
V)
(
CB
(
Fig.5 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Ta=25°C
10
0.001 0.01 0.1 1 1
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
Ta=125°C
Fig.3 Collector-emitter saturation voltag
vs. collector current
100
(MHz)
T
10
TRANSITION FREQUENCY : f
1
0.01 0.1 1 1
V
EMITTER CURRENT : I
Fig.6 Gain bandwidth product
vs. emitter current
C
(A)
Ta=25°C
CE
=2V
V
f=100MHz
E
(A)
tf
10
0.01 0.1 1 1
COLLECTOR CURRENT : I
C
(A)
Fig.7 Switching time
Rev.D 2/2
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