ROHM 2SD2444K Technical data
Transistors
Power Transistor (15V, 1A)
2SD2444K
zFeatures
1) Low saturation voltage, V
at I
/ IB = 0.4A / 20mA.
C
2) I
= 1A
C
= 0.3V (Max.)
CE(sat
)
3) Complements the 2SB1590K.
zPackaging specification and h
Type
Package
FE
h
Marking
Code
Basic ordering unit (pieces)
Denotes
h
FE
∗
FE
2SD2444K
SMT3
R
BS∗
T146
3000
zAbsolute maximum ratings (Ta=25°C)
zExternal dimensions (Unit : mm)
SMT3
(1)Emitter
(2)Base
(3)Collector
2.9
(3)
(2)
0.95 0.95
1.9
2SD2444K
0.4
1.1
0.8
1.6
2.8
(1)
0.15
Each lead has same dimensions
0.3Min.
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol Limits Unit
CBO
V
V
CEO
V
EBO
I
P
Tj
Tstg
C
C
15 V
15
6
1
0.2
150
−55 to +150
V
V
A (DC)
W
°C
°C
zElectrical characteristics (Ta=25°C)
CBO
CEO
EBO
CBO
EBO
CE(sat)
FE
h
f
T
Min.
Typ. Max. Unit Conditions
15
15
6
−
−
−
180
−
−
−
−
−
−
−
−
−
200
15
0.5
0.5
0.3
390
V
C
−
−
−
µA
µA
MHz
−
pF
−
I
V
C
I
V
I
E
V
V
V
I
C
V
V
V
=50µA
=1mA
=50µA
CB
EB
=400mA, IB=20mA
CE
CE
CB
=12V
=5V
/
IC=2V/50mA−
=2V, IE= −50mA, f=100MHz
=10V, IE=0A, f=1MHz
Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
BV
BV
BV
I
I
V
Cob
Rev.A 1/2
Transistors
zElectrical characteristic curves
(%)
C Max.
100
P
/
C
75
50
25
POWER DISSIPATION : P
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta
Fig.1 Grounded emitter output
characteristics
1000
500
FE
200
100
50
DC CURRENT GAIN : h
20
1m 2m 5m 10m 20m 50m 100m 200m 500m 1
COLLECTOR CURRENT : l
Fig.4 DC current gain vs.
collector current ( )
(°C)
Ta=25
V
CE
=
5V
2V
1V
C
(A)
500m
(A)
C
200m
100m
COLLECTOR CURRENT : I
1000
°C
FE
DC CURRENT GAIN : h
1
Ta=125
°C
25
°C
−
40
°C
50m
20m
10m
5m
2m
1m
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
BASE TO EMITTER VOLTAGE : VBE
Ta=25°C
CE
V
Fig.2 Grounded emitter propagation
characteristics
Ta=125°C
500
200
100
50
20
1m 2m 5m 10m 20m 50m 100m 200m 500m 1
COLLECTOR CURRENT : l
25°C
−40°C
Fig.5 DC collector gain vs.
collector current ( )
V
C
(A)
=2V
CE
2SD2444K
1.0
(V)
Ta=25°C
0.9
10mA
(A)
C
9mA
0.8
8mA
7mA
0.7
0.6
0.5
0.4
0.3
0.2
COLLECTOR CURRENT : I
0.1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
COLLECTOR TO EMITTER VOLTAGE : V
6mA
Fig.3 Grounded emitter output
characteristics
2V
(V)
500m
CE (sat)
200m
100m
50m
20m
10m
5m
2m
1m
1m 2m 5m 10m 20m 50m 100m 200m 500m 1
COLLECTOR SATURATION VOLTAGE : V
lC/lB=50
20
10
COLLECTOR CURRENT : I
1
=
Fig.6 Collector-emitter saturation voltage
vs. collector current ( )
5mA
4mA
3mA
IB=1mA
Ta=25
C
(A)
2mA
CE
(V)
°C
1
(V)
500m
CE (sat)
200m
100m
50m
20m
10m
5m
2m
1m
1m 2m 5m 10m 20m 50m 100m 200m 500m 1
COLLECTOR SATURATION VOLTAGE : V
Ta=125°C
25°C
−40°C
COLLECTOR CURRENT : I
C
(A)
lC/lB=20
Fig.7 Collector-emitter saturation voltage
vs. collector current ( )
1000
500
(MHz)
T
200
100
FREQUENCY : f
50
20
TRANSITION
10
10m 20m 50m 100m 200m 500m 1
EMITTER CURRENT : l
Fig.8 Transition frequency vs.
emitter current
Ta=25
f
V
E
(A)
=
100MHz
CE
=
°C
2V
1000
500
200
100
50
20
10
5
2
1
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
0.1 0.2 0.5 1 2 5 10 20 50 100
COLLECTOR TO BASE VOLTAGE : V
Fig.9 Collector output capacitance vs.
collector-base voltage
Ta=25
f=1MHz
l
E
=0A
CB
°C
(V)
Rev.A 2/2
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