Transistors
Power Transistor (15V, 1A)
2SD2444K
zFeatures
1) Low saturation voltage, V
at I
/ IB = 0.4A / 20mA.
C
2) I
= 1A
C
= 0.3V (Max.)
CE(sat
)
3) Complements the 2SB1590K.
zPackaging specification and h
Type
Package
FE
h
Marking
Code
Basic ordering unit (pieces)
Denotes
h
FE
∗
FE
2SD2444K
SMT3
R
BS∗
T146
3000
zAbsolute maximum ratings (Ta=25°C)
zExternal dimensions (Unit : mm)
SMT3
(1)Emitter
(2)Base
(3)Collector
2.9
(3)
(2)
0.95 0.95
1.9
2SD2444K
0.4
1.1
0.8
1.6
2.8
(1)
0.15
Each lead has same dimensions
0.3Min.
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol Limits Unit
CBO
V
V
CEO
V
EBO
I
P
Tj
Tstg
C
C
15 V
15
6
1
0.2
150
−55 to +150
V
V
A (DC)
W
°C
°C
zElectrical characteristics (Ta=25°C)
CBO
CEO
EBO
CBO
EBO
CE(sat)
FE
h
f
T
Min.
Typ. Max. Unit Conditions
15
15
6
−
−
−
180
−
−
−
−
−
−
−
−
−
200
15
0.5
0.5
0.3
390
V
C
−
−
−
µA
µA
MHz
−
pF
−
I
V
C
I
V
I
E
V
V
V
I
C
V
V
V
=50µA
=1mA
=50µA
CB
EB
=400mA, IB=20mA
CE
CE
CB
=12V
=5V
/
IC=2V/50mA−
=2V, IE= −50mA, f=100MHz
=10V, IE=0A, f=1MHz
Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
BV
BV
BV
I
I
V
Cob
Rev.A 1/2
Transistors
zElectrical characteristic curves
(%)
C Max.
100
P
/
C
75
50
25
POWER DISSIPATION : P
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta
Fig.1 Grounded emitter output
characteristics
1000
500
FE
200
100
50
DC CURRENT GAIN : h
20
1m 2m 5m 10m 20m 50m 100m 200m 500m 1
COLLECTOR CURRENT : l
Fig.4 DC current gain vs.
collector current ( )
(°C)
Ta=25
V
CE
=
5V
2V
1V
C
(A)
500m
(A)
C
200m
100m
COLLECTOR CURRENT : I
1000
°C
FE
DC CURRENT GAIN : h
1
Ta=125
°C
25
°C
−
40
°C
50m
20m
10m
5m
2m
1m
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
BASE TO EMITTER VOLTAGE : VBE
Ta=25°C
CE
V
Fig.2 Grounded emitter propagation
characteristics
Ta=125°C
500
200
100
50
20
1m 2m 5m 10m 20m 50m 100m 200m 500m 1
COLLECTOR CURRENT : l
25°C
−40°C
Fig.5 DC collector gain vs.
collector current ( )
V
C
(A)
=2V
CE
2SD2444K
1.0
(V)
Ta=25°C
0.9
10mA
(A)
C
9mA
0.8
8mA
7mA
0.7
0.6
0.5
0.4
0.3
0.2
COLLECTOR CURRENT : I
0.1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
COLLECTOR TO EMITTER VOLTAGE : V
6mA
Fig.3 Grounded emitter output
characteristics
2V
(V)
500m
CE (sat)
200m
100m
50m
20m
10m
5m
2m
1m
1m 2m 5m 10m 20m 50m 100m 200m 500m 1
COLLECTOR SATURATION VOLTAGE : V
lC/lB=50
20
10
COLLECTOR CURRENT : I
1
=
Fig.6 Collector-emitter saturation voltage
vs. collector current ( )
5mA
4mA
3mA
IB=1mA
Ta=25
C
(A)
2mA
CE
(V)
°C
1
(V)
500m
CE (sat)
200m
100m
50m
20m
10m
5m
2m
1m
1m 2m 5m 10m 20m 50m 100m 200m 500m 1
COLLECTOR SATURATION VOLTAGE : V
Ta=125°C
25°C
−40°C
COLLECTOR CURRENT : I
C
(A)
lC/lB=20
Fig.7 Collector-emitter saturation voltage
vs. collector current ( )
1000
500
(MHz)
T
200
100
FREQUENCY : f
50
20
TRANSITION
10
10m 20m 50m 100m 200m 500m 1
EMITTER CURRENT : l
Fig.8 Transition frequency vs.
emitter current
Ta=25
f
V
E
(A)
=
100MHz
CE
=
°C
2V
1000
500
200
100
50
20
10
5
2
1
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
0.1 0.2 0.5 1 2 5 10 20 50 100
COLLECTOR TO BASE VOLTAGE : V
Fig.9 Collector output capacitance vs.
collector-base voltage
Ta=25
f=1MHz
l
E
=0A
CB
°C
(V)
Rev.A 2/2
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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