2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
Transistors
Power Transistor (80V, 1A)
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
!Features
1) High V
2) High I
3) Good h
CEO, VCEO=80V
C, IC=1A (DC)
FE linearity
4) Low VCE (sat)
5) Complements the 2SB1260 /
2SB1241 / 2SB1181
!!!!Structure
Epitaxial planer type
NPN silicon transistor
!!!!External dimensions (Unit : mm)
2SD1898
ROHM : MPT3
EIAJ : SC-62
2SD1733
0.3
±
1.5
0.1
0.3
−
+
5.5
0.75
0.9
(1)
ROHM : CPT3
EIAJ : SC-63
2SD1863
6.8±0.2
0.65Max.
(1)
(2)
2.54
Taping specifications
6.5±0.2
5.1
+0.2
4.0±0.3
C0.5
+
0.2
−
0.1
0.9
±
0.1
0.65
2.3±0.22.3±0.2
(2)
(3)
(1) Base
(2) Collector
(3) Emitter
2.5±0.2
0.9
4.4±0.2
1.0
0.5±0.1
(3)
2.54
14.5±0.5
1.05
0.45±0.1
(1) Emitter
(2) Collector
(3) BaseROHM : ATV
+0.2
4.5
−0.1
1.6±0.1
0.5±0.1
−0.1
2.5
0.5±0.1
0.4±0.1
1.5±0.1
1.0±0.2
3.0±0.2
Abbreviated symbol : DF
+
0.2
2.3
−
0.1
0.5
±
0.1
0.5
±
1.5
9.5
2.5
0.55
±
0.1
1.0
±
0.2
(3)(2)(1)
0.4±0.1
1.5±0.1
+0.2
1.5
−0.1
+0.1
0.4
−0.05
2SD1768S
4±0.2
3±0.2(15Min.)
5
(1)
(2) (3)
Taping specifications
ROHM : SPT
EIAJ : SC-72
(1) Base
(2) Collector
(3) Emitter
2±0.2
3Min.
+0.15
0.45
−0.05
+0.4
2.5
−0.1
+0.15
0.45
0.5
−0.05
(1) Emitter
(2) Collector
(3) Base
1/4
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
Transistors
!!!!Absolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current
CBO
CEO
EBO
C
I
2SD1898
Collector power
dissipation
2SD1733
C
P
2SD1768S
2SD1863
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
∗1 Pw=20ms, duty=1 / 2
∗2 Printed circuit board 1.7mm thick, collector copper plating 1cm
∗3 When mounted on a 40×40×0.7mm ceramic board.
!!!!Electrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current
transfer ratio
2SD1733, 2SD1898
2SD1768S
Collector-emitter saturation voltage
Transition frequency
Output capacitance
∗ Measured using pulse current
Symbol
CBO
BV
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Limits
Unit
120 V
80 V
5V
1 A (DC)
2 A (Pulse)
0.5
2
1
10
W (Tc=25°C)
0.3
1
2
or larger.
∗1
W
W
∗3
W
W
W
∗2
Min.
Typ. Max. Unit Conditions
120
1202SD1863
80
82
−
−
−
−
5
−
−
−
−
1
−
−
1
−
390
390
−
120 − 390 −
−
0.15
0.4
−
100
−
20
−
−
VI
V
V
µA
µA
−
−
V
MHz
pF
I
I
V
V
V
I
V
V
C
C
E
C/IB
=
50µA
=
1mA
=
50µA
CB
EB
CE
CE
CB
=
=
=
=
=
=
100V
4V
3V, I
C
=
0.5A
500mA/20mA
10V, I
E
=−
50mA, f=100MHz
10V, I
E
=
0A, f=1MHz
∗
2/4
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
Transistors
!!!!Packaging specifications and h
Package Taping
Code
FE
Type
2SD1898
2SD1733
2SD1768S
2SD1863
Basic ordering unit (pieces)
PQR
PQR
QR
R
h
FE values are classified as follows :
Item
h
FE
P
82~180
120~270
!!!!Electrical characteristic curves
FE
T100
1000h
TL
2500
5000
−
−
−
−
−−
−
Q
R
180~390
TP
TV2
2500
−
−
−
−
−
1000
(mA)
100
C
10
1
COLLECTOR CURRENT : I
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
BASE TO EMITTER VOLTAGE : V
Fig.1 Grounded emitter propagation
characteristics
V)
(
CE(sat)
2.0
1.0
0.5
0.2
IC/IB=20/1
0.1
0.05
0.02
0.01
COLLECTOR SATURATION VOLTAGE : V
10/1
1000 10 1000
COLLECTOR CURRENT : IC (
Fig.4 Collector-emitter saturation
voltage vs. collector current
Ta=25°C
CE
=5V
V
BE
(V)
Ta=25°C
mA)
1.0
A)
(
C
0.8
0.6
0.4
0.2
COLLECTOR CURRENT : I
0
2408106
COLLECTOR TO EMITTER VOLTAGE : VCE (
Fig.2 Grounded emitter output
characteristics
500
(MHz)
200
T
100
50
20
10
5
2
TRANSITION FREQUENCY : f
1 2 5 10 20 50 100 200 5001000
EMITTER CURRENT : −I
Fig.5 Gain bandwidth product vs.
emitter current
E
(mA)
Ta=25°C
6mA
5mA
4mA
2mA
1mA
IB=0mA
Ta=25°C
CE
=5V
V
FE
1000
3mA
100
DC CURRENT GAIN : h
0
V)
1000
pF)
pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (
EMITTER INPUT CAPACITANCE : Cib (
COLLECTOR CURRENT : IC (
Fig.3 DC current gain vs.
100
10
1
0.1 0.2 0.5 1 2 5 10 20 50 100
COLLECTOR TO BASE VOLTAGE : VCB (
EMITTER TO BASE VOLTAGE : VEB (
Fig.6 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
1000 10 1000
collector current
Ta=25°C
mA)
Ta=25°C
f=1MHz
E
=0A
I
Ic=0A
VCE=3V
1V
V)
V)
3/4
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
Transistors
10
5
Ic Max (Pulse)
2
(A)
DC
C
1
500m
200m
100m
50m
20m
10m
5m
COLLECTOR CURRENT : I
2m
1m
0.1 0.2 0.5 1 2 5 10 20 50100 500200 1000
COLLECTOR TO EMITTER VOLTAGE : V
Pw=100mS
Pw=10m
S
Ta=25°C
Single
non-repetitive
pulse
CE
(V)
10
5
Ic Max (Pulse)
2
A)
(
DC
C
1
500m
200m
100m
50m
20m
10m
5m
COLLECTOR CURRENT : I
2m
1m
0.1 0.2 0.5 1 2 5 10 20 50100 500200 1000
COLLECTOR TO EMITTER VOLTAGE : VCE (
Pw=100mS
Pw=10m
S
Ta=25°C
Single
non-repetitive
pulse
V)
Fig.7 Safe operating area
(2SD1863)
Fig.8 Safe operating area
(2SD1898)
4/4
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0
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