ROHM 2SD1733, 2SD1768S, 2SD1863, 2SD1898 Schematic [ru]
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
Transistors
Power Transistor (80V, 1A)
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
!Features
1) High V
2) High I
3) Good h
CEO, VCEO=80V
C, IC=1A (DC)
FE linearity
4) Low VCE (sat)
5) Complements the 2SB1260 /
2SB1241 / 2SB1181
!!!!Structure
Epitaxial planer type
NPN silicon transistor
!!!!External dimensions (Unit : mm)
2SD1898
ROHM : MPT3
EIAJ : SC-62
2SD1733
0.3
±
1.5
0.1
0.3
−
+
5.5
0.75
0.9
(1)
ROHM : CPT3
EIAJ : SC-63
2SD1863
6.8±0.2
0.65Max.
(1)
(2)
2.54
Taping specifications
6.5±0.2
5.1
+0.2
4.0±0.3
C0.5
+
0.2
−
0.1
0.9
±
0.1
0.65
2.3±0.22.3±0.2
(2)
(3)
(1) Base
(2) Collector
(3) Emitter
2.5±0.2
0.9
4.4±0.2
1.0
0.5±0.1
(3)
2.54
14.5±0.5
1.05
0.45±0.1
(1) Emitter
(2) Collector
(3) BaseROHM : ATV
+0.2
4.5
−0.1
1.6±0.1
0.5±0.1
−0.1
2.5
0.5±0.1
0.4±0.1
1.5±0.1
1.0±0.2
3.0±0.2
Abbreviated symbol : DF
+
0.2
2.3
−
0.1
0.5
±
0.1
0.5
±
1.5
9.5
2.5
0.55
±
0.1
1.0
±
0.2
(3)(2)(1)
0.4±0.1
1.5±0.1
+0.2
1.5
−0.1
+0.1
0.4
−0.05
2SD1768S
4±0.2
3±0.2(15Min.)
5
(1)
(2) (3)
Taping specifications
ROHM : SPT
EIAJ : SC-72
(1) Base
(2) Collector
(3) Emitter
2±0.2
3Min.
+0.15
0.45
−0.05
+0.4
2.5
−0.1
+0.15
0.45
0.5
−0.05
(1) Emitter
(2) Collector
(3) Base
1/4
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
Transistors
!!!!Absolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current
CBO
CEO
EBO
C
I
2SD1898
Collector power
dissipation
2SD1733
C
P
2SD1768S
2SD1863
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
∗1 Pw=20ms, duty=1 / 2
∗2 Printed circuit board 1.7mm thick, collector copper plating 1cm
∗3 When mounted on a 40×40×0.7mm ceramic board.
!!!!Electrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current
transfer ratio
2SD1733, 2SD1898
2SD1768S
Collector-emitter saturation voltage
Transition frequency
Output capacitance
∗ Measured using pulse current
Symbol
CBO
BV
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Limits
Unit
120 V
80 V
5V
1 A (DC)
2 A (Pulse)
0.5
2
1
10
W (Tc=25°C)
0.3
1
2
or larger.
∗1
W
W
∗3
W
W
W
∗2
Min.
Typ. Max. Unit Conditions
120
1202SD1863
80
82
−
−
−
−
5
−
−
−
−
1
−
−
1
−
390
390
−
120 − 390 −
−
0.15
0.4
−
100
−
20
−
−
VI
V
V
µA
µA
−
−
V
MHz
pF
I
I
V
V
V
I
V
V
C
C
E
C/IB
=
50µA
=
1mA
=
50µA
CB
EB
CE
CE
CB
=
=
=
=
=
=
100V
4V
3V, I
C
=
0.5A
500mA/20mA
10V, I
E
=−
50mA, f=100MHz
10V, I
E
=
0A, f=1MHz
∗
2/4
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