Page 1
Po wer Transistors
10.0±0.2
5.5±0.2
7.5±0.2
16.7±0.3
0.7±0.1
14.0±0.5
Solder Dip
4.0
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.25
5.08±0.5
213
2.7±0.2
4.2±0.2
4.2±0.2
φ3.1±0.1
2SD1773
Silicon NPN triple diffusion planar type Darlington
For midium speed switching
Complementary to 2SB1193
Features
■
●
High foward current transfer ratio h
●
High-speed switching
●
Full-pack package which can be installed to the heat sink with
one screw
Absolute Maximum Ratings (T
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Electrical Characteristics (T
■
Parameter
Collector cutoff current
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
V
V
V
I
CP
I
C
P
C
T
j
T
stg
CBO
CEO
EBO
C
Symbol
I
CBO
I
CEO
V
CEO(sus)
V
EBO
h
FE
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
f
T
t
on
t
stg
t
f
FE
=25˚C)
C
Ratings
120
120
7
12
8
50
2
150
–55 to +150
=25˚C)
VCB = 120V, IE = 0
VCE = 100V, IB = 0
IC = 2A, L = 10mH
IE = 50mA, IC = 0
VCE = 3V, IC = 4A
IC = 4A, IB = 8mA
IC = 8A, IB = 80mA
IC = 4A, IB = 8mA
IC = 8A, IB = 80mA
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 4A, IB1 = 8mA, IB2 = –8mA,
VCC = 50V
Unit
V
V
V
A
A
W
˚C
˚C
Conditions
TO–220 Full Pack Package(a)
Internal Connection
B
min
120
7
1000
typ
20
0.7
Unit: mm
1:Base
2:Collector
3:Emitter
C
E
max
100
Unit
µA
10
µA
V
V
20000
1.5
3
2
3.5
V
V
V
V
MHz
µs
6
2
µs
µs
1
Page 2
Po wer Transistors 2SD1773
PC—Ta IC—V
80
)
70
W
(
C
60
50
40
30
20
10
Collector power dissipation P
0
0 16040 12080 14020 10060
)
30
V
(
BE(sat)
10
3
1
0.3
Base to emitter saturation voltage V
0.1
0.1 0.3 1 3 10
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
=2W)
(P
(1)
(2)
(3)
C
Ambient temperature Ta (˚C
V
BE(sat)—IC
(1) IC/IB=500
(2) I
=250
C/IB
=100
(3) I
C/IB
=25˚C
T
C
(2)
(1)
Collector current IC (A
)
CE
10
8
)
A
(
C
6
4
Collector current I
2
0
012108264
)
Collector to emitter voltage VCE (V
hFE—I
30000
FE
10000
TC=100˚C
3000
(3)
1000
300
Forward current transfer ratio h
100
0.1 0.3 1 3 10
–25˚C
25˚C
Collector current IC (A
IB=5mA
C
TC=25˚C
4mA
3mA
2mA
1mA
0.5mA
0.2mA
VCE=3V
)
)
V
(
30
CE(sat)
10
0.3
0.1
Collector to emitter saturation voltage V
)
100
30
)
µs
(
10
f
,t
stg
,t
on
0.3
0.1
Switching time t
0.03
0.01
V
CE(sat)—IC
(1) IC/IB=500
(2) I
=250
C/IB
=100
(3) I
C/IB
=25˚C
T
C
(1)
3
1
0.1 0.3 1 3 10
Collector current IC (A
ton, t
, tf — I
stg
t
stg
3
t
f
1
082647153
Collector current IC (A
C
Pulsed tw=1ms
Duty cycle=1%
=500 (IB1=–IB2)
I
C/IB
V
=50V
CC
=25˚C
T
C
t
on
(2)
(3)
)
)
Area of safe operation (ASO) R
100
30
I
CP
)
10
A
(
I
C
C
3
10ms
1
0.3
0.1
Collector current I
0.03
0.01
1 10 100 10003 30 300
Non repetitive pulse
=25˚C
T
C
t=1ms
DC
Collector to emitter voltage VCE (V
)
2
10
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
)
˚C/W
(
10
(t)
th
1
–1
10
Thermal resistance R
–2
10
–3
10
–2
10
2
—t
th(t)
(1)
(2)
–1
110
Time t (s
10 10
)
2
10
3
4
10
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