Page 1
Po wer Transistors
2SD1751
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB1170
Features
■
●
High forward current transfer ratio hFE which has satisfactory
linearity
●
Low collector to emitter saturation voltage V
●
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
Absolute Maximum Ratings (T
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
CE(sat)
=25˚C)
C
Ratings
60
60
6
4
2
15
1.3
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
10.2±0.3
7.2±0.3
+0.3
–0.
10.0
7.2±0.3
7.0±0.3
3.0±0.2
0.8±0.21.0±0.2
4.6±0.4
7.0±0.3
1.1±0.1
123
4.6±0.4
1.1±0.1
0.75±0.1
2.3±0.2
213
2.0±0.2
3.0±0.2
0.75±0.1
2.3±0.2
3.5±0.2
1:Base
2:Collector
3:Emitter
I Type Package
3.5±0.2
1.0 max.
2.5
0.5 max.
1:Base
2:Collector
3:Emitter
I Type Package (Y)
Unit: mm
0.85±0.1
0.4±0.1
Unit: mm
0 to 0.15
0.9±0.1
0 to 0.15
1.01.0
2.5±0.2
2.5±0.2
Electrical Characteristics (T
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
Rank classification
FE2
Rank Q P
h
FE2
70 to 150 120 to 250
C
Symbol
I
CES
I
CEO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
=25˚C)
Conditions
VCE = 60V, VBE = 0
VCE = 30V, IB = 0
VEB = 6V, IC = 0
IC = 30mA, IB = 0
VCE = 4V, IC = 0.1A
VCE = 4V, IC = 1A
VCE = 4V, IC = 1A
IC = 2A, IB = 0.2A
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 1A, IB1 = 0.1A, IB2 = – 0.1A
min
60
35
70
typ
20
0.2
3.5
0.7
max
200
300
1
250
1.2
2
Unit
µA
µA
mA
V
V
V
MHz
µs
µs
µs
1
Page 2
Po wer Transistors 2SD1751
PC—Ta IC—V
20
)
W
(
(1)
C
15
10
5
(2)
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
)
100
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
(1) TC=Ta
(2) Without heat sink
V
CE(sat)—IC
(P
=1.3W)
C
)
IC/IB=10
TC=100˚C
25˚C
–25˚C
)
CE
5
4
)
A
(
C
3
2
Collector current I
1
0
012108264
IB=100mA
Collector to emitter voltage VCE (V
hFE—I
C
10000
3000
FE
1000
TC=100˚C
300
100
Forward current transfer ratio h
25˚C
–25˚C
30
10
3
1
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
TC=25˚C
80mA
50mA
40mA
30mA
20mA
10mA
5mA
1mA
VCE=4V
)
6
5
)
A
(
4
C
3
2
Collector current I
1
0
03.02.52.00.5 1.51.0
)
Base to emitter voltage VBE (V
1000
300
)
MHz
100
(
T
30
10
3
1
Transition frequency f
0.3
0.1
0.01 0.1 1 100.03 0.3 3
IC—V
BE
25˚C
TC=100˚C
–25˚C
fT—I
C
Collector current IC (A
VCE=4V
VCE=10V
f=1MHz
T
=25˚C
C
)
)
Area of safe operation (ASO) R
100
30
)
10
A
(
I
CP
C
3
I
C
1
0.3
0.1
Collector current I
0.03
0.01
1 10 100 10003 30 300
300ms
Non repetitive pulse
=25˚C
T
C
t=10ms
1ms
Collector to emitter voltage VCE (V
)
3
10
)
˚C/W
2
(
10
(t)
th
10
1
Thermal resistance R
–1
10
–4
10
–3
10
2
—t
th(t)
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
(1)
(2)
–1
–2
10
Time t (s
1010
110
10
)
3
2
4
10
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