Single 8-Channel/Differential 4-Channel,
CMOS Analog Multiplexers
The DG408 Single 8-Channel, and DG409 Differential
4-Channel monolithic CMOS analog multiplexers are drop-in
replacements for the popular DG508A and DG509A series
devices. They each include an array of eight analog
switches, a TTL/CMOS compatible digital decode circuit for
channel selection, a voltage reference for logic thresholds
and an ENABLE input for device selection when several
multiplexers are present.
The DG408 and DG409 feature lower signal ON resistance
(<100Ω) and faster switch transition time (t
TRANS
< 250ns)
compared to the DG508A or DG509A. Charge injection has
been reduced, simplifying sample and hold applications. The
improvements in the DG408 series are made possible by
using a high-voltage silicon-gate process. An epitaxial layer
prevents the latch-up associated with older CMOS
technologies. Power supplies may be single-ended from +5V
to +34V, or split from ±5V to ±20V.
The analog switches are bilateral, equally matched for AC or
bidirectional signals. The ON resistance variation with
analog signals is quite low over a ±5V analog input range.
Ordering Information
PART
NUMBER
DG408DJ-40 to 8516 Ld PDIPE16.3
DG408DJZ (Note)-40 to 8516 Ld PDIP (Pb-free) E16.3
DG408DY-40 to 8516 Ld SOICM16.15
DG408DY-T16 Ld SOIC Tape and ReelM16.15
DG408DYZ (Note)-40 to 8516 Ld SOIC (Pb-free) M16.15
DG408DYZ-T
(Note)
DG409DJ-40 to 8516 Ld PDIPE16.3
DG409DJZ (Note)-40 to 8516 Ld PDIP (Pb-free) E16.3
DG409DY-40 to 8516 Ld SOICM16.15
DG409DY-T16 Ld SOIC Tape and ReelM16.15
DG409DYZ (Note)-40 to 8516 Ld SOIC (Pb-free) M16.15
DG409DYZ-T
(Note)
NOTE: Intersil Pb-free products employ special Pb-free material
sets; molding compounds/die attach materials and 100% matte tin
plate termination finish, which is compatible with both SnPb and
Pb-free soldering operations. Intersil Pb-free products are MSL
classified at Pb-free peak reflow temperatures that meet or exceed
the Pb-free requirements of IPC/JEDEC J Std-020B.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
3. Signals on S
is measured with the component mounted on an evaluation PC board in free air.
4. θ
JA
, DX, EN or AX exceeding V+ or V- are clamped by internal diodes. Limit diode current to maximum current ratings.
X
(°C/W)
JA
Electrical SpecificationsTest Conditions: V+ = +15V, V- = -15V, V
PARAMETERTEST CONDITIONSTEMP (°C)
= 0.8V, VAH = 2.4V, Unless Otherwise Specified
AL
(NOTE 5)
MIN
(NOTE 6)
TYP
(NOTE 5)
MAXUNITS
DYNAMIC CHARACTERISTICS
Transition Time, t
TRANS
Break-Before-Make Interval, t
Enable Turn-ON Time, t
ON(EN)
OPEN
(See Figure 1)Full-160250ns
(See Figure 3)2510--ns
(See Figure 2)25-115150ns
Full--225ns
Enable Turn-OFF Time, t
OFF(EN)
Charge Injection, QC
OFF IsolationV
Logic Input Capacitance, C
Source OFF Capacitance, C
Drain OFF Capacitance, C
IN
S(OFF)
D(OFF)
DG40825-26-pF
(See Figure 2)Full-105150ns
= 10nF, VS = 0V25-20-pC
L
= 0V, RL = 1kΩ,
EN
f = 100kHz (Note 9)
25--75-dB
f = 1MHz25-8-pF
VEN = 0V, VS = 0V,
25-3-pF
f = 1MHz
VEN = 0V, VD = 0V,
f = 1MHz
DG40925-14-pF
Drain ON Capacitance, C
D(ON)
DG40825-37-pF
VEN = 3V, VD = 0V,
f = 1MHz, V
= 0V or 3V
A
DG40925-25-pF
DIGITAL INPUT CHARACTERISTICS
Logic Input Current,
Input Voltage High, I
Logic Input Current,
Input Voltage Low, I
AH
AL
VA = 2.4V, 15VFull-10-10µA
VEN = 0V, 2.4V,
V
= 0V
A
Full-10-10µA
ANALOG SWITCH CHARACTERISTICS
Analog Signal Range, V
ANALOG
Drain-Source ON Resistance,
r
DS(ON)
r
Matching Between Channels,
DS(ON)
∆r
DS(ON)
Source OFF Leakage Current, I
VD = ±10V, IS = -10mA
(Note 7)
VD = 10V, -10V (Note 8)25--15Ω
S(OFF)VEN
V
D
= 0V, VS = ±10V,
= +10V
Full-15-15V
25-40100Ω
Full--125Ω
25-0.5-0.5nA
Full-5-5nA
4
Page 5
DG408, DG409
Electrical SpecificationsTest Conditions: V+ = +15V, V- = -15V, V
A very convenient form of overvoltage protection consists of
adding two small signal diodes (1N4148, 1N914 type) in
series with the supply pins (see Figure 9). This arrangement
effectively blocks the flow of reverse currents. It also floats
the supply pin above or below the normal V+ or V- value. In
this case the overvoltage signal actually becomes the power
supply of the IC. From the point of view of the chip, nothing
has changed, as long as the difference V+ - (V-) doesn’t
exceed 44V. The addition of these diodes will reduce the
analog signal range to 1V below V+ and 1V above V-, but it
preserves the low channel resistance and low leakage
characteristics.
Typical application information is for Design Aid Only, not
guaranteed and not subject to production testing.
V+
1N4148
S
X
V
-
DG408
1N4148
V
G
D
FIGURE 9. OVERVOLTAGE PROTECTION USING BLOCKING
DIODES
8
Page 9
Typical Performance Curves
3.5
DG408, DG409
75
3.0
V+ = +15V
V- = -15V
2.0
(pA)
IN
I
1.0
0.5pA
0.0
-1.0
051015
VIN (V)
FIGURE 10. INPUT LOGIC CURRENT vs LOGIC INPUT
VO LTAGE
80
V+ = +15V
V- = - 15 V
(pF)
S, D
C
60
40
C
D(ON)
C
D(OFF)
C
D(ON)
50
V
C
C
A
D(OFF)
S(OFF)
(V)
(pF)
S, D
C
25
0
04812
FIGURE 11. SOURCE/DRAIN CAPACITANCE vs ANALOG
VOLTAGE (SINGLE 12V SUPPLY)
V
= ±15V
SUPPLY
= 0V
V
0
-200
(pA)
IN
I
-400
IN
20
0
-15015
C
S(OFF)
V
(V)
A
FIGURE 12. SOURCE/DRAIN CAPACITANCE vs ANALOG
VO LTAGE
60
DG408 I
40
20
0
(pA)
D
I
-20
-40
-60
0 24681012
DG409 I
DG409 I
DG408 I
D(OFF)
D(OFF)
D(ON)
D(ON)
V
(V)
D
VS = 0V FOR I
VS = VD FOR I
D(OFF)
D(ON)
FIGURE 14. DRAIN LEAKAGE CURRENT vs SOURCE/DRAIN
VOLTAGE (SINGLE 12V SUPPLY)
-600
-800
-5554585125
TEMPERATURE (°C)
FIGURE 13. LOGIC INPUT CURRENT vs TEMPERATURE
100
V+ = 15V
V- = -15V
60
V
= -VD FOR I
S
VD = V
20
-20
(pA)
D
I
-60
-100
-140
-15015
S(OPEN)
D(OFF)
FOR I
D(ON)
V
, VD (V)
S
DG409 I
DG409 I
DG408 I
D(OFF)
D(ON)
D(ON)
, I
D(OFF)
FIGURE 15. DRAIN LEAKAGE CURRENT vs SOURCE/DRAIN
VOLTAGE
9
Page 10
Typical Performance Curves (Continued)
20
2.0
15
10
(pA)
S(OFF)
I
-5
5
0
V+ = +15V
V- = -15V
V+ = +12V
V- = 0 V
DG408, DG409
(V)
IN
V
1.5
1.0
0.5
-10
-15015
VS (V)
FIGURE 16. SOURCE LEAKAGE CURRENT vs SOURCE
VO LTAGE
5
10
V
= ±15V
4
10
3
10
2
10
-(I-) (µA)
10
1
0.1
SUPPLY
EN = 2.4V
EN = 0V
1001K10K100K1M10M
SWITCHING FREQUENCY (Hz)
FIGURE 18. NEGATIVE SUPPLY CURRENT vs SWITCHING
FREQUENCY
0.0
48121620
V
(±V)
SUPPLY
FIGURE 17. INPUT SWITCHING THRESHOLD vs SUPPLY
VOLTAGE
4
10
V
= ±15V
SUPPLY
3
10
2
10
10
I+ (mA)
1
0.1
0.01
1001K10K100K1M10M
EN = 2.4V
EN = 0V
SWITCHING FREQUENCY (Hz)
FIGURE 19. POSITIVE SUPPLY CURRENT vs SWITCHING
FREQUENCY
5
10
4
10
3
10
2
10
10
I+, I- (nA)
1
0.1
0.01
-5554585125
FIGURE 20. I
I+
-(I-)
TEMPERATURE (°C)
SUPPLY
vs TEMPERATUREFIGURE 21. NEGATIVE SUPPLY CURRENT vs TEMPERATURE
V
SUPPLY
10
= ±15V
0
-200
I- (nA)
-400
V+ = 15V
-600
-800
-555125
V- = -15V
= 0V
V
IN
V
= 0V
EN
TEMPERATURE (°C)
4585
Page 11
DG408, DG409
Typical Performance Curves (Continued)
20
15
I+ (µA)
10
5
0
-555125
TEMPERATURE (°C)
4585
FIGURE 22. POSITIVE SUPPLY CURRENT vs TEMPERATURE
(DG408)
V+ = 15V
V- = -15V
= 0V
V
IN
V
= 0V
EN
90
CL = 10,000pF
80
V
= 5V
IN
70
60
50
40
Q (pC)
30
20
10
0
-10
-15-10-50510
P-P
V+ = 15V
V- = -15V
V+ = 12V
V- = 0V
VS (V)
FIGURE 23. CHARGE INJECTION vs ANALOG VOLTAGE
15
120
100
±5V
80
(Ω)
60
DS(ON)
r
40
±15V
20
±20V
0
-20 -16-12-8-4048121620
FIGURE 24. r
80
70
60
50
(Ω)
40
DS(ON)
r
30
20
10
0
-15015
0°C
-40°C
-55°C
VD (V)
vs VD AND SUPPLYFIGURE 25. r
DS(ON)
V+ = 15V
V- = -1 5V
VS (V)
±8V
±10V
125°C
85°C
25°C
±12V
160
140
120
100
(Ω)
80
DS(ON)
r
60
40
20
130
110
90
(Ω)
70
DS(ON)
r
50
30
10
V- = 0V
0
04 812162022
0°C
-40°C
-55°C
0812
V+ = 7.5V
10V
12V
VD (V)
vs VD (SINGLE SUPPLY)
DS(ON)
4
VS (V)
125°C
85°C
25°C
15V
20V
22V
V+ = 12V
V- = 0V
FIGURE 26. r
vs VS AND TEMPERATUREFIGURE 27. r
DS(ON)
11
vs VS AND TEMPERATURE
DS(ON)
(SINGLE SUPPLY)
Page 12
Typical Performance Curves (Continued)
DG408, DG409
-150
V+ = +15V
-130
-110
-90
(dB)
-70
-50
-30
1001K10K100K1M10M100M
OFF ISOLATION
CROSSTALK
FREQUENCY (Hz)
V- = -1 5V
= 1kΩ
R
L
275
250
225
200
(ns)
t
175
150
125
100
89101112131415
V
SUPPLY
t
TRANS
t
ON(EN)
(V)
t
OFF(EN)
FIGURE 28. OFF ISOLATION AND CROSSTALK vs FREQUENCYFIGURE 29. SWITCHING TIME vs SINGLE SUPPLY
200
175
150
t
TRANS
190
170
150
t
TRANS
t
ON(EN)
t (ns)
125
t
OFF(EN)
100
t
SUPPLY
ON(EN)
(±V)
75
10121416182022
V
t (ns)
130
110
90
2345
FIGURE 30. SWITCHING TIME vs BIPOLAR SUPPLYFIGURE 31. SWITCHING TIME vs V
180
t
t
ON(EN)
TRANS
V
t
OFF(EN)
(V)
IN
(BIPOLAR SUPPLY)FIGURE 33. INSERTION LOSS vs FREQUENCY
IN
160
140
t (ns)
120
100
80
234 5
FIGURE 32. SWITCHING TIME vs V
1
0
-1
-2
-3
LOSS (dB)
-4
-5
-6
V+ = +15V
V- = -15V
REF. 1V
RMS
10
2
10
10310410
FREQUENCY (Hz)
t
OFF(EN)
(V)
V
IN
(SINGLE SUPPLY)
IN
RL = 1kΩ
RL = 50Ω
5
10610710
8
12
Page 13
Die Characteristics
DG408, DG409
DIE DIMENSIONS:
1800µm x 3320µm x 485µm
METALLIZATION:
Type: SiAl
Thickness: 12k
ű1kÅ
Metallization Mask Layout
V- (3)
PAS SIVATION:
Type: Nitride
Thickness: 8kű1kÅ
WORST CASE CURRENT DENSITY:
4
9.1 x 10
DG408
A
EN
(2)(1)(16)(15)(14)
0
A
1
A/cm
A
2
GND
2
NC
(13) V+
(12) S
(11) S
NC
5
6
(4)
S
1
(5)
S
2
(6)
S
3
S
(7)
4
(8)
D
(9)
S
8
(10)
S
7
13
Page 14
Die Characteristics
DG408, DG409
DIE DIMENSIONS:
1800µm x 3320µm x 485µm
METALLIZATION:
Type: SiAl
Thickness: 12k
ű1kÅ
Metallization Mask Layout
V- (3)
PAS SIVATION:
Type: Nitride
Thickness: 8kű1kÅ
WORST CASE CURRENT DENSITY:
4
9.1 x 10
DG409
A
EN
(2)(1)(16)NC(15)
0
A
1
A/cm
GND
2
NC
(14) V+
S1A (4)
(5)
S
2A
(6)
S
3A
S
(7)
4A
(8)
D
(13) S
1B
(12) S
2B
(11) S
3B
(9)
A
D
B
(10)
S
4B
14
Page 15
Dual-In-Line Plastic Packages (PDIP)
DG408, DG409
N
D1
-C-
E1
-B-
A1
A2
E
A
L
e
C
C
L
e
A
C
e
B
INDEX
AREA
BASE
PLANE
SEATING
PLANE
D1
B1
12 3N/2
-AD
e
B
0.010 (0.25)C AMBS
NOTES:
1. Controlling Dimensions: INCH. In case of conflict between English and
Metric dimensions, the inch dimensions control.
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of
Publication No. 95.
4. Dimensions A, A1 and L are measured with the package seated in JEDEC seating plane gauge GS-3.
5. D, D1, and E1 dimensions do not include mold flash or protrusions.
Mold flash or protrusions shall not exceed 0.010 inch (0.25mm).
6. E andare measured with the leads constrained to be perpendic-
7. e
e
A
ular to datum .
and eC are measured at the lead tips with the leads unconstrained.
B
e
must be zero or greater.
C
-C-
8. B1 maximum dimensions do not include dambar protrusions. Dambar
protrusions shall not exceed 0.010 inch (0.25mm).
9. N is the maximum number of terminal positions.
10. Corner leads (1, N, N/2 and N/2 + 1) for E8.3, E16.3, E18.3, E28.3,
E42.6 will have a B1 dimension of 0.030 - 0.045 inch (0.76 - 1.14mm).
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
16
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