Renesas 3SK318 User Manual

3SK318
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
Features
Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz)
Excellent cross modulation characteristics
Capable low voltage operation; +B= 5V
Outline
RENESAS Package code: PTSP0004ZA-A (Package name:
Note: Marking is “YB–“.
CMPAK-4)
3
REJ03G0819-0200
(Previous ADE-208-600)
Aug.10.2005
2
1. Source
1
4
2. Gate1
3. Gate2
4. Drain
Rev.2.00 Aug 10, 2005 page 1 of 7
3SK318
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDS 6 V
Gate1 to source voltage V
Gate2 to source voltage V
Drain current ID 20 mA
Channel power dissipation Pch 100 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
±6 V
G1S
±6 V
G2S
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown voltage V
Gate1 to source breakdown voltage V
Gate2 to source breakdown
(BR)DSS
(BR)G1SS
V
(BR)G2SS
voltage
Gate1 to source cutoff current I
Gate2 to source cutoff current I
Gate1 to source cutoff voltage V
Gate2 to source cutoff voltage V
Drain current I
G1SS
G2SS
G1S(off)
G2S(off)
DS(op)
Forward transfer admittance |yfs| 18 24 32 mS
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
1.3 1.6 1.9 pF
iss
0.9 1.2 1.5 pF
oss
— 0.019 0.03 pF
rss
Power gain PG 18 21 — dB
Noise figure NF 1.4 2.2 dB
6 — — V ID = 200 µA, V
±6 — — V IG1 = ±10 µA, V
±6 — — V IG2 = ±10 µA, V
— — ±100 nA V
— — ±100 nA V
0.5 0.7 1.0 V
0.5 0.7 1.0 V
0.5 4 10 mA
= V
G1S
= VDS = 0
G2S
= VDS = 0
G1S
= ±5 V, V
G1S
= ±5 V, V
G2S
= 5 V, V
V
DS
= 100µA
I
D
= 5 V, V
V
DS
= 100 µA
I
D
= 3.5 V, V
V
DS
= 3 V
V
G2S
= 3.5 V, V
V
DS
= 10 mA , f = 1 kHz
I
D
VDS = 3.5 V, V
= 10 mA , f= 1 MHz
I
D
VDS = 3.5 V, V
= 10 mA , f = 900 MHz
I
D
G2S
G1S
G2S
G1S
= 3 V
= 3 V
G1S
G2S
G2S
G2S
= VDS = 0
= VDS = 0
= 1.1 V
= 3 V
= 3 V
= 3 V
G2S
= 0
Rev.2.00 Aug 10, 2005 page 2 of 7
3SK318
Maximum Channel Power
Dissipation Curve
200
150
100
50
Channel Power Dissipation Pch (mW)
0
50 100 150
Ambient Temperature Ta (°C)
Drain Current vs.
Gate1 to Source Voltage
20
VDS = 3.5 V
16
2.5 V
2.0 V
200
Typical Output Characteristics
20
16
(mA)
12
D
8
4
Drain Current I
0
Drain to Source Voltage VDS (V)
Gate2 to Source Voltage
20
V
DS
16
V
= 1.7 V
G1S
1.6 V
1.5 V
1.4 V
1.3 V
1.2 V
1.1 V
1.0 V
0.9 V
V
= 3 V
G2S
0.8 V
2468
Drain Current vs.
= 3.5 V
2.0 V
1.8 V
1.6 V
10
(mA)
D
12
8
4
Drain Current I
0
1.5 V
V
= 1.0 V
G2S
12 345
Gate1 to Source Voltage V
Forward Transfer Admittance
vs. Gate1 Voltage
30
| (mS)
fS
Forward Transfer Admittance |y
VDS = 3.5 V
24
18
12
6
0
1 V
0.4 0.8 1.2 1.6 2.0
V
G2S
1.5 V
G1S
= 3 V
2.5 V
2 V
(V)
(mA)
D
12
8
4
Drain Current I
0
12345
Gate2 to Source Voltage V
Power Gain vs. Drain Current
25
20
15
10
5
Power Gain PG (dB)
0
5101520
1.2 V
V
G1S
1.4 V
= 1.0 V
VDS = 3.5 V V f = 900 MHz
G2S
G2S
= 3 V
(V)
25
Gate1 to Source Voltage V
Rev.2.00 Aug 10, 2005 page 3 of 7
G1S
(V)
Drain Current ID (mA)
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