Renesas 3SK318 User Manual

3SK318

Silicon N-Channel Dual Gate MOS FET
UHF RF Amplifier

Features

• Low noise characteristics;
(NF= 1.4 dB typ. at f= 900 MHz)

• Excellent cross modulation characteristics

• Capable low voltage operation; +B= 5V

Outline

RENESAS Package code: PTSP0004ZA-A
(Package name:

Note: Marking is “YB–“.

CMPAK-4)

3

REJ03G0819-0200

(Previous ADE-208-600)

Rev.2.00

Aug.10.2005

2

1. Source

1

4

2. Gate1

3. Gate2

4. Drain

Rev.2.00 Aug 10, 2005 page 1 of 7

3SK318

Absolute Maximum Ratings

(Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage VDS 6 V

Gate1 to source voltage V

Gate2 to source voltage V

Drain current ID 20 mA

Channel power dissipation Pch 100 mW

Channel temperature Tch 150 °C

Storage temperature Tstg –55 to +150 °C

±6 V

G1S

±6 V

G2S

Electrical Characteristics

(Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown voltage V

Gate1 to source breakdown voltage V

Gate2 to source breakdown

(BR)DSS

(BR)G1SS

V

(BR)G2SS

voltage

Gate1 to source cutoff current I

Gate2 to source cutoff current I

Gate1 to source cutoff voltage V

Gate2 to source cutoff voltage V

Drain current I

G1SS

G2SS

G1S(off)

G2S(off)

DS(op)

Forward transfer admittance |yfs| 18 24 32 mS

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

1.3 1.6 1.9 pF

iss

0.9 1.2 1.5 pF

oss

— 0.019 0.03 pF

rss

Power gain PG 18 21 — dB

Noise figure NF — 1.4 2.2 dB

6 — — V ID = 200 µA, V

±6 — — V IG1 = ±10 µA, V

±6 — — V IG2 = ±10 µA, V

— — ±100 nA V

— — ±100 nA V

0.5 0.7 1.0 V

0.5 0.7 1.0 V

0.5 4 10 mA

= V

G1S

= VDS = 0

G2S

= VDS = 0

G1S

= ±5 V, V

G1S

= ±5 V, V

G2S

= 5 V, V

V

DS

= 100µA

I

D

= 5 V, V

V

DS

= 100 µA

I

D

= 3.5 V, V

V

DS

= 3 V

V

G2S

= 3.5 V, V

V

DS

= 10 mA , f = 1 kHz

I

D

VDS = 3.5 V, V

= 10 mA , f= 1 MHz

I

D

VDS = 3.5 V, V

= 10 mA , f = 900 MHz

I

D

G2S

G1S

G2S

G1S

= 3 V

= 3 V

G1S

G2S

G2S

G2S

= VDS = 0

= VDS = 0

= 1.1 V

= 3 V

= 3 V

= 3 V

G2S

= 0

Rev.2.00 Aug 10, 2005 page 2 of 7

3SK318

Maximum Channel Power

Dissipation Curve

200

150

100

50

Channel Power Dissipation Pch (mW)

0

50 100 150

Ambient Temperature Ta (°C)

Drain Current vs.

Gate1 to Source Voltage

20

VDS = 3.5 V

16

2.5 V

2.0 V

200

Typical Output Characteristics

20

16

(mA)

12

D

8

4

Drain Current I

0

Drain to Source Voltage VDS (V)

Gate2 to Source Voltage

20

V

DS

16

V

= 1.7 V

G1S

1.6 V

1.5 V

1.4 V

1.3 V

1.2 V

1.1 V

1.0 V

0.9 V

V

= 3 V

G2S

0.8 V

2468

Drain Current vs.

= 3.5 V

2.0 V

1.8 V

1.6 V

10

(mA)

D

12

8

4

Drain Current I

0

1.5 V

V

= 1.0 V

G2S

12 345

Gate1 to Source Voltage V

Forward Transfer Admittance

vs. Gate1 Voltage

30

| (mS)

fS

Forward Transfer Admittance |y

VDS = 3.5 V

24

18

12

6

0

1 V

0.4 0.8 1.2 1.6 2.0

V

G2S

1.5 V

G1S

= 3 V

2.5 V

2 V

(V)

(mA)

D

12

8

4

Drain Current I

0

12345

Gate2 to Source Voltage V

Power Gain vs. Drain Current

25

20

15

10

5

Power Gain PG (dB)

0

5101520

1.2 V

V

G1S

1.4 V

= 1.0 V

VDS = 3.5 V
V
f = 900 MHz

G2S

G2S

= 3 V

(V)

25

Gate1 to Source Voltage V

Rev.2.00 Aug 10, 2005 page 3 of 7

G1S

(V)

Drain Current ID (mA)

3SK318

Noise Figure vs. Drain Current Power Gain vs. Drain to Source Voltage

5

4

3

2

Noise Figure NF (dB)

1

0

5101520

VDS = 3.5 V
V

= 3 V

G2S

f = 900 MHz

Drain Current ID (mA)

Noise Figure vs. Drain to Source Voltage

5

V

= 3 V

G2S

I

= 10 mA

4

3

D

f = 900 MHz

25

25

20

15

10

V

Power Gain PG (dB)

5

0

246810

= 3 V

G2S

I

= 10 mA

D

f = 900 MHz

Drain to Source Voltage VDS (V)

Power Gain vs. Gate2 to Source Voltage

25

VDS = 3.5 V
f = 900MHz

20

15

2

1

Noise Figure NF (dB)

0

2468

Drain to Source Voltage V

Noise Figure vs. Gate2 to Source Voltage

5

VDS = 3.5 V

4

3

2

1

Noise Figure NF (dB)

f = 900MHz

DS

(V)

10

10

5

Power Gain PG (dB)

012345

Gate2 to Source Voltage V

G2S

(V)

01

23

Gate2 to Source Voltage V

Rev.2.00 Aug 10, 2005 page 4 of 7

4

G2S

(V)

5

3SK318

.4

.2

0

–.2

–.4

Test Condition :

150°

180°

–150°

Test Condition :

S11 Parameter vs. Frequency

1

.8

.6

–.6

.6

.4

.8

–.8

–1

V

= 3.5 V , V

DS

I

= 10mA

D

.2

1.5
2

1.5

234

1

–2

–1.5

= 3 V

G2S

50 to 1000 MHz (50 MHz step)

S12 Parameter vs. Frequency

Scale: 0.002 / div.

90°

120°

–120°

–90°

V

= 3.5 V , V

DS

I

= 10mA

D

50 to 1000 MHz (50 MHz step)

60°

–60°

G2S

= 3 V

S21 Parameter vs. Frequency

Scale: 1 / div.

90°

120°

3

4

5

10

10

5

–10

–5

–4

–3

150°

180°

–150°

Test Condition :

–120°

–90°

V

= 3.5 V , V

DS

= 10mA

I

D

60°

–60°

G2S

30°

0°

–30°

= 3 V

50 to 1000 MHz (50 MHz step)

S22 Parameter vs. Frequency

1

30°

–30°

.8

.6

.4

.2

–.6

.4

–.8

.6

.8

–1

VDS = 3.5 V , V

= 10mA

I

D

0°

0

–.2

.2

–.4

Test Condition :

1.5
2

3

4

5

10

G2S

5

–2

= 3 V

10

–10

–5

–4

–3

1.5

234

1

–1.5

50 to 1000 MHz (50 MHz step)

Rev.2.00 Aug 10, 2005 page 5 of 7

3SK318

S Parameter

(VDS = 3.5V, V

S11 S21 S12 S22 Freq.

(MHz)

50 1.000 –2.8 2.41 176.3 0.00068 89.1 0.999 –2.2

100 0.998 –5.8 2.41 171.9 0.00176 88.5 0.996 –4.5

150 0.997 –9.1 2.39 167.6 0.00223 80.7 0.996 –6.7

200 0.994 –12.2 2.38 163.7 0.00303 76.6 0.994 –8.7

250 0.994 –15.1 2.37 159.8 0.00365 79.1 0.991 –11.0

300 0.986 –18.5 2.35 155.5 0.00414 75.4 0.988 –13.2

350 0.978 –21.3 2.30 151.4 0.00484 75.0 0.983 –15.3

400 0.972 –24.1 2.28 147.6 0.00533 78.0 0.980 –17.4

450 0.969 –27.0 2.26 143.6 0.00588 71.6 0.976 –19.6

500 0.954 –29.7 2.23 140.0 0.00617 69.5 0.971 –21.7

550 0.955 –32.8 2.19 135.9 0.00666 71.5 0.966 –23.7

600 0.941 –35.7 2.17 132.2 0.00672 70.6 0.960 –25.6

650 0.932 –38.3 2.14 128.6 0.00694 69.0 0.955 –27.8

700 0.924 –41.3 2.09 125.0 0.00709 71.4 0.948 –29.9

750 0.919 –44.1 2.07 121.5 0.00689 69.0 0.942 –31.8

800 0.905 –46.9 2.03 117.9 0.00699 68.9 0.937 –33.8

850 0.896 –49.2 2.00 114.7 0.00644 74.2 0.930 –35.8

900 0.884 –52.4 1.96 110.4 0.00633 75.5 0.923 –37.6

950 0.880 –54.7 1.93 107.1 0.00585 77.8 0.917 –39.8

1000 0.866 –57.7 1.89 103.8 0.00605 82.1 0.910 –41.9

MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.

= 3V, ID = 10mA, Zo = 50Ω)

G2S

Rev.2.00 Aug 10, 2005 page 6 of 7

3SK318

Package Dimensions

SC-82A 0.006g

b

1

RENESAS CodeJEITA Package Code Package Name

D

ee

2

A

CMPAK-4(T) / CMPAK-4(T)VPTSP0004ZA-A

BB

EH

E

AA

c

x

y

b

b

2

A-A Section

AS

M

S

c

1

c

b

A

2

A

1

b

1

b

3

B-B Section

A

S

c

1

MASS[Typ.]

L

Q

c

L

P

L

1

A

3

e

e

2

l

1

b

5

l

1

b

4

Pattern of terminal position areas

A

A

1

A

2

A

3

b

b

1

b

2

b

3

c

c

1

D

E
e

e

2

H

E

L

L

1

L

P

x
y

b

4

b

5

e

1

l

1

Q

Dimension in Millimeters

Min Nom Max

0.8
0

0.8

0.9

0.25

0.25

0.32

0.35 0.42 0.5

0.3

0.4

0.15

0.13

0.1

0.11

2.0

1.8

1.25

0.65

0.6

2.1

1.5

0.2

1.35

0.05

0.05

0.45

0.55

1.15

1.8

0.3

0.1 0.5

0.2

1.1

0.1

1.0

0.4

2.2

2.4

0.7

0.6

0.9

Reference
Symbol

e

1

Ordering Information

Part Name Quantity Shipping Container

3SK318YB-TL-E 3000 φ 178 mm Reel, 8 mm Emboss Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of

production before ordering the product.

Rev.2.00 Aug 10, 2005 page 7 of 7

Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

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Colophon .3.0