)
2SK3069
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R
= 6 mΩ typ.
DS(on)
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
REJ03G1062-1100
(Previous: ADE-208-694I)
Rev.11.00
Sep 07, 2005
D
1. Gate
2. Drain
G
1
2
3
S
(Flange
3. Source
Rev.11.00 Sep 07, 2005 page 1 of 7
2SK3069
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current ID 75 A
Drain peak current I
Body-drain diode reverse drain current IDR 75 A
Avalanche current I
Avalanche energy E
Channel dissipation Pch
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25
3. Value at Tch = 25
°C
°C, Rg ≥ 50 Ω
60 V
DSS
±20 V
GSS
Note 1
D(pulse)
AP
AR
300 A
Note 3
50 A
Note 3
214 mJ
Note 2
100 W
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state
resistance
Forward transfer admittance |yfs| 50 80 — S ID = 40 A, VDS = 10 V
Input capacitance Ciss — 7100 — pF
Output capacitance Coss — 1000 — pF
Reverse transfer capacitance Crss — 280 — pF
Total gate charge Qg — 125 — nC
Gate to source charge Qgs — 25 — nC
Gate to drain charge Qgd — 25 — nC
Turn-on delay time t
Rise time tr — 300 — ns
Turn-off delay time t
Fall time tf — 330 — ns
Body–drain diode forward voltage VDF — 1.05 — V IF = 75A, VGS = 0
Body–drain diode reverse recovery
time
Note: 4. Pulse test
60 — — V ID = 10 mA, VGS = 0
(BR)DSS
— — ±0.1 µA VGS = ±20 V, VDS = 0
GSS
— — 10 µA VDS = 60 V, VGS = 0
DSS
1.0 — 2.5 V ID = 1 mA, VDS = 10 V
GS(off)
— 6.0 7.5 mΩ ID = 40 A, VGS = 10 V
R
DS(on)
— 8.0 12 mΩ ID = 40 A, VGS = 4 V
= 10 V, VGS = 0,
V
DS
f = 1 MHz
= 25 V, VGS = 10 V,
V
DD
= 75 A
I
D
— 60 — ns
d(on)
— 520 — ns
d(off)
— 90 — ns
t
rr
= 10 V, ID = 40 A,
V
GS
= 0.75 Ω
R
L
= 75A, VGS = 0
I
F
/ dt = 50 A/ µs
di
F
Note 4
Note 4
Note 4
Note 4
Rev.11.00 Sep 07, 2005 page 2 of 7
2SK3069
Main Characteristics
Power vs. Temperature Derating
200
150
100
50
Channel Dissipation Pch (W)
0
50 100 150 200
Case Temperature T
Typical Output Characteristics
(A)
D
100
80
60
5 V
4 V
VGS
= 10 V
(°C)
C
Pulse Test
3.5 V
Maximum Safe Operation Area
1000
300
100
(A)
D
30
10
Operation in
3
this area is
limited by R
1
Drain Current I
0.3
Ta = 25°C
0.1
0.1 0.3 1
Drain to Source Voltage V
Typical Transfer Characteristics
100
V
= 10 V
DS
Pulse Test
80
(A)
D
60
PW = 10 ms (1 shot)
DC Operation
(Tc = 25°C)
DS(on)
3
10
100 µs
1 ms
10 µs
30
DS
(V)
100
40
Drain Current I
20
0
246810
Drain to Source Voltage V
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
2.0
(V)
1.6
DS (on)
1.2
0.8
0.4
V
Drain to Source Saturation Voltage
10 A
0
48
ID = 50 A
Pulse Test
20 A
12
Gate to Source Voltage V
3 V
2.5 V
(V)
DS
16 20
(V)
GS
40
Drain Current I
20
0
Gate to Source Voltage V
75°C
12345
25°C
Tc = –25°C
(V)
GS
Static Drain to Source on State
Resistance vs. Drain Current
100
(mΩ)
50
DS (on)
20
10
5
2
1
Static Drain to Source on State Resistance
1
R
VGS
= 4 V
10 V
2
10
Drain Current I
Pulse Test
20 100
505
(A)
D
200
Rev.11.00 Sep 07, 2005 page 3 of 7
2SK3069
Static Drain to Source on State
Resistance vs. Temperature
20
(mΩ)
DS (on)
Static Drain to Source on State Resistance
R
Pulse Test
16
12
8
4
0
–50 0 50 100 150 200
ID = 50 A
4 V
VGS = 10 V
Case Temperature T
20 A
10 A
10, 20, 50 A
(°C)
C
Body to Drain Diode Reverse
Recovery Time
1000
500
(ns)
rr
Forward Transfer Admittance
vs. Drain Current
500
(S)
fs
Forward Transfer Admittance y
V
= 10 V
DS
200
Pulse Test
100
50
20
10
5
2
1
0.5
0.1 0.3 1 3 10 30 100
Tc = –25°C
25°C
75°C
Drain Current I
D
(A)
Typical Capacitance
vs. Drain to Source Voltage
30000
10000
Ciss
VGS = 0
f = 1 MHz
200
100
50
20
Reverse Recovery Time t
10
0.1 0.3 1 3 10 30 100
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
Reverse Drain Current I
Dynamic Input Characteristics
100
80
60
40
20
0
ID = 75 A
VGS
V
V
DS
V
DD
80 160 240 320 400
DD
= 50 V
25 V
10 V
(V)
DS
Drain to Source Voltage V
Gate Charge Qg (nc)
DR
= 50 V
25 V
10 V
(A)
Capacitance C (pF)
20
(V)
GS
16
12
8
4
Gate to Source Voltage V
0
Switching Time t (ns)
3000
1000
300
100
01020304050
Drain to Source Voltage V
Coss
Crss
DS
(V)
Switching Characteristics
1000
500
200
100
50
20
10
0.1 0.2
VGS = 10 V, V
PW = 5 µs, duty < 1 %
1
0.5
Drain Current I
t
d(off)
t
f
t
r
t
d(on)
= 30 V
DD
20
10 100
5
2
D
50
(A)
Rev.11.00 Sep 07, 2005 page 4 of 7
2SK3069
Reverse Drain Current vs.
Source to Drain Voltage
100
(A)
DR
80
10 V
5 V
60
40
20
Reverse Drain Current I
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V
3
(t)
s
1
Maximum Avalanche Energy vs.
Channel Temperature Derating
250
(mJ)
AR
200
150
VGS
= 0, –5 V
100
50
Pulse Test
SD
(V)
0
25 50 75 100 125 150
Repetitive Avalanche Energy E
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
D = 1
I
= 50 A
AP
V
= 25 V
DD
duty < 0.1 %
Rg > 50 Ω
Tc = 25°C
Vin
15 V
0.5
0.3
0.2
θ γ θ
0.1
0.1
ch – c(t) = s (t) • ch – c
θ
ch – c = 1.25°C/W, Tc = 25°C
0.05
P
0.03
0.02
0.01
1shot pulse
Normalized Transient Thermal Impedance γ
0.01
10 µ
100 µ 1 m 10 m
DM
PW
T
100 m 1 10
D =
Pulse Width PW (S)
Avalanche Test Circuit Avalanche Waveform
V
DS
Monitor
Rg
50 Ω
I
AP
Monitor
D. U. T
L
V
DD
V
DD
0
E
= • L • I
AR
I
AP
1
2
2
•
AP
I
D
V
PW
DSS
T
V
DSS
– V
DD
V
(BR)DSS
V
DS
Rev.11.00 Sep 07, 2005 page 5 of 7
2SK3069
Switching Time Test Circuit Switching Time Waveforms
90%
90%
10%
t
f
Vin Monitor
Vin
10 V
50 Ω
D.U.T.
R
L
V
= 30 V
Vout
Monitor
DD
Vin
Vout
t
d(on)
10%
10%
90%
t
r
t
d(off)
Rev.11.00 Sep 07, 2005 page 6 of 7
2SK3069
Package Dimensions
RENESAS CodeJEITA Package Code
PRSS0004AC-A TO-220AB / TO-220ABV
2.79 ± 0.218.5 ± 0.57.8 ± 0.5
1.27
2.54 ± 0.5
Package Name
11.5 Max
10.16 ± 0.2
9.5
8.0
2.54 ± 0.5
MASS[Typ.]
φ 3.6
–0.08
1.5 Max
0.76 ± 0.1
1.8gSC-46
+0.2
6.4
–0.1
+0.1
Unit: mm
4.44 ± 0.2
1.26 ± 0.15
2.7 Max
14.0 ± 0.5 15.0 ± 0.3
0.5 ± 0.1
Ordering Information
Part Name Quantity Shipping Container
2SK3069-E 500 pcs Box (Sack)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.11.00 Sep 07, 2005 page 7 of 7
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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