Renesas 2SK3069 User Manual

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2SK3069

Silicon N Channel MOS FET
High Speed Power Switching

Features

• Low on-resistance

R

= 6 mΩ typ.

DS(on)

• Low drive current

• 4 V gate drive device can be driven from 5 V source

Outline

RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)

REJ03G1062-1100

(Previous: ADE-208-694I)

Rev.11.00

Sep 07, 2005

D

1. Gate

2. Drain

G

1

2

3

S

(Flange

3. Source

Rev.11.00 Sep 07, 2005 page 1 of 7

2SK3069

Absolute Maximum Ratings

(Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current ID 75 A
Drain peak current I
Body-drain diode reverse drain current IDR 75 A
Avalanche current I
Avalanche energy E
Channel dissipation Pch
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25

3. Value at Tch = 25

°C

°C, Rg ≥ 50 Ω

60 V

DSS

±20 V

GSS

Note 1

D(pulse)

AP

AR

300 A

Note 3

50 A

Note 3

214 mJ

Note 2

100 W

Electrical Characteristics

(Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state

resistance
Forward transfer admittance |yfs| 50 80 — S ID = 40 A, VDS = 10 V

Input capacitance Ciss — 7100 — pF
Output capacitance Coss — 1000 — pF
Reverse transfer capacitance Crss — 280 — pF
Total gate charge Qg — 125 — nC
Gate to source charge Qgs — 25 — nC
Gate to drain charge Qgd — 25 — nC
Turn-on delay time t
Rise time tr — 300 — ns
Turn-off delay time t
Fall time tf — 330 — ns
Body–drain diode forward voltage VDF — 1.05 — V IF = 75A, VGS = 0
Body–drain diode reverse recovery

time
Note: 4. Pulse test

60 — — V ID = 10 mA, VGS = 0

(BR)DSS

— — ±0.1 µA VGS = ±20 V, VDS = 0

GSS

— — 10 µA VDS = 60 V, VGS = 0

DSS

1.0 — 2.5 V ID = 1 mA, VDS = 10 V

GS(off)

— 6.0 7.5 mΩ ID = 40 A, VGS = 10 V

R

DS(on)

— 8.0 12 mΩ ID = 40 A, VGS = 4 V

= 10 V, VGS = 0,

V

DS

f = 1 MHz

= 25 V, VGS = 10 V,

V

DD

= 75 A

I

D

— 60 — ns

d(on)

— 520 — ns

d(off)

— 90 — ns

t

rr

= 10 V, ID = 40 A,

V

GS

= 0.75 Ω

R

L

= 75A, VGS = 0

I

F

/ dt = 50 A/ µs

di

F

Note 4

Note 4

Note 4

Note 4

Rev.11.00 Sep 07, 2005 page 2 of 7

2SK3069

Main Characteristics

Power vs. Temperature Derating

200

150

100

50

Channel Dissipation Pch (W)

0

50 100 150 200

Case Temperature T

Typical Output Characteristics

(A)

D

100

80

60

5 V

4 V

VGS

= 10 V

(°C)

C

Pulse Test

3.5 V

Maximum Safe Operation Area

1000

300

100

(A)

D

30

10

Operation in

3

this area is
limited by R

1

Drain Current I

0.3

Ta = 25°C

0.1

0.1 0.3 1

Drain to Source Voltage V

Typical Transfer Characteristics

100

V

= 10 V

DS

Pulse Test

80

(A)

D

60

PW = 10 ms (1 shot)

DC Operation

(Tc = 25°C)

DS(on)

3

10

100 µs

1 ms

10 µs

30

DS

(V)

100

40

Drain Current I

20

0

246810

Drain to Source Voltage V

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

2.0

(V)

1.6

DS (on)

1.2

0.8

0.4

V

Drain to Source Saturation Voltage

10 A

0

48

ID = 50 A

Pulse Test

20 A

12

Gate to Source Voltage V

3 V

2.5 V

(V)

DS

16 20

(V)

GS

40

Drain Current I

20

0

Gate to Source Voltage V

75°C

12345

25°C

Tc = –25°C

(V)

GS

Static Drain to Source on State

Resistance vs. Drain Current

100

(mΩ)

50

DS (on)

20

10

5

2

1

Static Drain to Source on State Resistance

1

R

VGS

= 4 V

10 V

2

10

Drain Current I

Pulse Test

20 100

505

(A)

D

200

Rev.11.00 Sep 07, 2005 page 3 of 7