RENESAS 2SJ160, 2SJ161, 2SJ162 DATASHEETS
2SJ160, 2SJ161, 2SJ162
Silicon P Channel MOS FET
Description
Low frequency power amplifier
Complementary pair with 2SK1056, 2SK1057 and 2SK1058
Features
• Good frequency characteristic
• High speed switching
• Wide area of safe operation
• Enhancement-mode
• Good complementary characteristics
• Equipped with gate protection diodes
• Suitable for audio power amplifier
REJ03G0847-0200
(Previous: ADE-208-1182)
Rev.2.00
Sep 07, 2005
Outline
RENESAS Package code:
(Package name:
TO-3P)
PRSS0004ZE-A
1
2
3
D
G
S
1. Gate
2. Source (Flange)
3. Drain
Rev.2.00 Sep 07, 2005 page 1 of 5
2SJ160, 2SJ161, 2SJ162
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Value Unit
Drain to source voltage
Gate to source voltage V
Drain current ID –7 A
Body to drain diode reverse drain current IDR –7 A
Channel dissipation Pch
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at Tc = 25°C
2SJ160 –120
V
DSX
V
2SJ161 –140
2SJ162
±15 V
GSS
Note 1
100 W
–160
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
voltage
Gate to source breakdown voltage V
Gate to source cutoff voltage V
Drain to source saturation voltage V
Forward transfer admittance |yfs| 0.7 1.0 1.4 S ID = –3 A, VDS = –10 V
Input capacitance Ciss — 900 — pF
Output capacitance Coss — 400 — pF
Reverse transfer capacitance Crss — 40 — pF
Turn-on time ton — 230 — ns
Turn-off time t
Note: 2. Pulse test
2SJ160 –120 — — V
V
(BR) DSX
ID = –10 mA, VGS = 10 V
2SJ161 –140 — — V
2SJ162
(BR) GSS
GS (off)
DS (sat)
–160 — — V
±15 — — V IG = ±100 µA, VDS = 0
–0.15 — –1.45 V ID = –100 mA, VDS = –10 V
— — –12 V ID = –7 A, VGS = 0
VGS = 5 V, VDS = –10 V,
f = 1 MHz
V
= –20 V ID = –4 A
DD
— 110 — ns
off
Note 2
Note 2
Rev.2.00 Sep 07, 2005 page 2 of 5
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