Renesas 2SC5437 Schematic [ru]

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Old Company Name in Catalogs and Other Documents

On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
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April 1
Renesas Electronics Corporation

Issued by: Renesas Electronics Corporation (http://www.renesas.com)

st

, 2010

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DATA SHEET

NPN SILICON RF TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR

FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES

• Contains same chip as 2SC5195

• Flat-lead 3-pin thin-type ultra super minimold package

ORDERING INFORMATION

Part Number Quantity Supplying Form
2SC5437 50 pcs (Non reel) • 8 mm wide embossed taping
2SC5437-T1 3 kpcs/reel • Pin 3 (collector) face the perforation side of the tape

2SC5437

Remark

To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°°°°C)

Parameter Symbol Ratings Unit
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current I
Total Power Dissipation
Junction Temperature T
Storage Temperature T

Free air

Note

CBO

CEO

EBO

C

Note

tot

P

j

stg

−

9V
6V

2V
100 mA
125 mW
150

65 to +150

°

C

°

C

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.

Document No. PU10105EJ01V0DS (1st edition)
(Previous No. P13146EJ1V0DS00)
Date Published February 2002 CP(K)
Printed in Japan

The mark

••••

shows major revised points.

NEC Corporation 1998

NEC Compound Semiconductor Devices 2002





ELECTRICAL CHARACTERISTICS (TA = +25°°°°C)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit

2SC5437

Collector Cut-off Current I
Emitter Cut-off Current I
DC Current Gain
Gain Bandwidth Product (1) f
Gain Bandwidth Product (2) f
Insertion Power Gain (1)
Insertion Power Gain (2)

CBO

VCB = 5 V, IE = 0 mA – – 100 nA

EBO

VEB = 1 V, IC = 0 mA – – 100 nA

Note 1

FE

h




VCE = 1 V, IC = 3 mA 80 – 145 –

T

VCE = 1 V, IC = 3 mA, f = 2 GHz 4.0 5.0 – GHz

T

VCE = 3 V, IC = 20 mA, f = 2 GHz – 9.5 – GHz

2



21e

S

VCE = 1 V, IC = 3 mA, f = 2 GHz 3.0 4.0 – dB

2



21e

S

VCE = 3 V, IC = 20 mA, f = 2 GHz – 8.0 – dB
Noise Figure (1) NF VCE = 1 V, IC = 3 mA, f = 2 GHz – 1.9 2.5 dB
Noise Figure (2) NF VCE = 3 V, IC = 7 mA, f = 2 GHz – 1.7 – dB

Note 2

re

Reverse Transfer Capacitance

Notes 1.

Pulse measurement: PW ≤ 350
Collector to base capacitance when the emitter grounded

2.

C

VCB = 1 V, IE = 0 mA, f = 1 MHz – 0.7 0.8 pF

s, Duty Cycle ≤ 2%

µ

hFE CLASSIFICATION

Rank EB FB

Marking TS TT

hFE Value 80 to 110 100 to 145

2

Data Sheet PU10105EJ01V0DS

TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°°°°C)

2SC5437

TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE

150

125

(mW)

tot

100

75

50

25

Total Power Dissipation P

0

50 7525 100 125 150

Ambient Temperature TA (˚C)

COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE

100

VCE = 1 V

10

(mA)

C

1

0.1

Collector Current I

0.01

Base to Emitter Voltage VBE (V)

Free Air

0.50 1.0

REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE

1.0

(pF)

re

0.5

0.2

Reverse Transfer Capacitance C

0.1
1 10 100

Collector to Base Voltage VCB (V)

f = 1 MHz

COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE

30

µ

200 A

25

(mA)

C

20

15

10

Collector Current I

5

0 345612 7

Collector to Emitter Voltage VCE (V)

µ

180 A

µ

160 A

µ

140 A

µ

120 A

µ

100 A

µ

80 A

µ

60 A

µ

40 A

µ

IB = 20 A

DC CURRENT GAIN vs.
COLLECTOR CURRENT

200

VCE = 1 V

FE

100

DC Current Gain h

0

0.1 101 100
Collector Current IC (mA)

(GHz)

T

Gain Bandwidth Product f

Data Sheet PU10105EJ01V0DS

GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT

8

CE

= 1 V

V

f = 2 GHz

7
6
5
4
3
2
1
0

25110

Collector Current IC (mA)

3