RENESAS 2SC5051 Technical data
r
2SC5051
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product
f
= 11 GHz Typ
T
• High gain, low noise figure
PG = 14.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz
Outline
REJ03G0741-0300
(Previous ADE-208-1131A)
Rev.3.00
Aug.10.2005
RENESAS Package code: PTSP0003ZA-A
(Package name: CMPAK
R
)
3
1. Emitter
1
2
2. Base
3. Collecto
Note: Marking is “YZ–”.
*CMPAK is a trademark of Renesas Technology Corp.
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current IC 50 mA
Collector power dissipation PC 100 mW
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
15 V
CBO
8 V
CEO
1.5 V
EBO
Rev.3.00 Aug 10, 2005 page 1 of 5
2SC5051
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown voltage V
Collector cutoff current I
I
Emitter cutoff current I
DC current transfer ratio hFE 50 120 250 VCE = 5 V, IC = 20 mA
Collector output capacitance Cob — 0.65 1.15 pF VCB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product fT 8.0 11.0 — GHz VCE = 5 V, IC = 20 mA
S21 Parameter |S21|2 — 14.0 — dB
Power gain PG 11.5 14.5 — dB
Noise figure NF — 1.1 2.0 dB
15 — — V IC = 10 µA, IE = 0
(BR)CBO
— — 10 µA VCB = 12 V, IE = 0
CBO
— — 1 mA VCE = 8 V, RBE = ∞
CEO
— — 10 µA VEB = 1.5 V, IC = 0
EBO
= 5 V, IC = 20 mA,
V
CE
f = 1000 MHz
= 5 V, IC = 20 mA,
V
CE
f = 900 MHz
= 5 V, IC = 5 mA,
V
CE
f = 900 MHz
Rev.3.00 Aug 10, 2005 page 2 of 5
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