RENESAS 2SC5051 Technical data

r

2SC5051

Silicon NPN Epitaxial

Application

VHF / UHF wide band amplifier

Features

• High gain bandwidth product

f

= 11 GHz Typ

T

• High gain, low noise figure

PG = 14.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz

Outline

REJ03G0741-0300

(Previous ADE-208-1131A)

Rev.3.00

Aug.10.2005

RENESAS Package code: PTSP0003ZA-A
(Package name: CMPAK

R

)

3

1. Emitter

1

2

2. Base

3. Collecto

Note: Marking is “YZ–”.

*CMPAK is a trademark of Renesas Technology Corp.

Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.

Absolute Maximum Ratings

(Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current IC 50 mA
Collector power dissipation PC 100 mW
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

15 V

CBO

8 V

CEO

1.5 V

EBO

Rev.3.00 Aug 10, 2005 page 1 of 5

2SC5051

Electrical Characteristics

(Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to base breakdown voltage V
Collector cutoff current I
I
Emitter cutoff current I
DC current transfer ratio hFE 50 120 250 VCE = 5 V, IC = 20 mA
Collector output capacitance Cob — 0.65 1.15 pF VCB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product fT 8.0 11.0 — GHz VCE = 5 V, IC = 20 mA
S21 Parameter |S21|2 — 14.0 — dB

Power gain PG 11.5 14.5 — dB

Noise figure NF — 1.1 2.0 dB

15 — — V IC = 10 µA, IE = 0

(BR)CBO

— — 10 µA VCB = 12 V, IE = 0

CBO

— — 1 mA VCE = 8 V, RBE = ∞

CEO

— — 10 µA VEB = 1.5 V, IC = 0

EBO

= 5 V, IC = 20 mA,

V

CE

f = 1000 MHz

= 5 V, IC = 20 mA,

V

CE

f = 900 MHz

= 5 V, IC = 5 mA,

V

CE

f = 900 MHz

Rev.3.00 Aug 10, 2005 page 2 of 5

2SC5051

Main Characteristics

Maximum Collector Dissipation Curve

120

(mW)

100

C

FE

200

160

DC Current Transfer Ratio

vs. Collector Current

V = 5V

CE

80

60

40

20

Collector Power Dissipation P

0 50 100 150

Ambient Temperature Ta (°C)

Gain Bandwidth Product

vs. Collector Current

12

V = 5 V

(GHz)

T

CE

10

8

6

4

120

80

40

DC Current Transfer Ratio h

0

12 51020

Collector Current IC (mA)

Collector Output Capacitance vs.

Collector to Base Voltage

0.9

(pF)

ob

0.8

0.7

0.6

I = 0

E

f = 1 MHz

50

2

Gain Bandwidth Product f

0

12 51020 50

Collector Current IC (mA)

Power Gain vs. Collector Current

20

V = 5V

CE

f = 900 MHz

16

12

8

Power Gain PG (dB)

4

0

12 51020

Collector Current IC (mA)

50

0.5

Collector Output Capacitance C

0.4

12 51020

0.5

Collector to Base Voltage VCB (V)

Noise Figure vs. Collector Current

5

4

3

2

Noise Figure NF (dB)

1

0

1

2

51020

Collector Current IC (mA)

V = 5V

CE

f = 900MHz

50

Rev.3.00 Aug 10, 2005 page 3 of 5

2SC5051

S21 Parameter vs. Collector Current

20

V = 5V

(dB)

2

2121

S Parameter |S |

CE

f = 1 GHz

16

12

8

4

0

12 51020

50

Collector Current IC (mA)

Rev.3.00 Aug 10, 2005 page 4 of 5

2SC5051

Package Dimensions

SC-70 0.006g

D

RENESAS CodeJEITA Package Code Package Name

CMPAK / CMPAKVPTSP0003ZA-A

A

e

MASS[Typ.]

Q

c

EH

E

L

P

L

AA

x

M

b

b

1

c

A-A Section

AS

b

A

2

A

A

1

S

c

1

L

1

A

3

e

l

1

b

2

Pattern of terminal position areas

Reference
Symbol

e

1

Min Nom Max

A

A

1

A

2

A

3

b

0.25

b

1

c

c

1

D

1.15

E
e

H

E

L

L

1

L

P

x

b

2

e

1

l

1

Q

Dimension in Millimeters

0.8
0

0.8

0.9

0.25

0.32

0.3

0.13

0.1

0.11

2.0

1.8

1.25

0.65

2.1

1.8

0.3

0.1

0.2

1.5

0.2

1.1

0.1

1.0

0.4

0.15

2.2

1.35

2.4

0.7

0.5

0.6

0.05

0.45

0.9

Ordering Information

Part Name Quantity Shipping Container

2SC5051YZ-TR-E 3000 φ 178 mm Reel, 8 mm Emboss Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of

production before ordering the product.

Rev.3.00 Aug 10, 2005 page 5 of 5

Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

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