RENESAS 2SC5051 Technical data

r
2SC5051
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
High gain bandwidth product
f
= 11 GHz Typ
T
High gain, low noise figure
PG = 14.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz
Outline
REJ03G0741-0300
(Previous ADE-208-1131A)
Rev.3.00
RENESAS Package code: PTSP0003ZA-A (Package name: CMPAK
R
)
3
1. Emitter
1
2
2. Base
3. Collecto
Note: Marking is “YZ–”.
*CMPAK is a trademark of Renesas Technology Corp.
Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor.
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V Collector to emitter voltage V Emitter to base voltage V Collector current IC 50 mA Collector power dissipation PC 100 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C
15 V
CBO
8 V
CEO
1.5 V
EBO
Rev.3.00 Aug 10, 2005 page 1 of 5
2SC5051
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown voltage V Collector cutoff current I I Emitter cutoff current I DC current transfer ratio hFE 50 120 250 VCE = 5 V, IC = 20 mA Collector output capacitance Cob 0.65 1.15 pF VCB = 5 V, IE = 0, f = 1 MHz Gain bandwidth product fT 8.0 11.0 GHz VCE = 5 V, IC = 20 mA S21 Parameter |S21|2 — 14.0 — dB
Power gain PG 11.5 14.5 dB
Noise figure NF 1.1 2.0 dB
15 — — V IC = 10 µA, IE = 0
(BR)CBO
— — 10 µA VCB = 12 V, IE = 0
CBO
— — 1 mA VCE = 8 V, RBE =
CEO
— — 10 µA VEB = 1.5 V, IC = 0
EBO
= 5 V, IC = 20 mA,
V
CE
f = 1000 MHz
= 5 V, IC = 20 mA,
V
CE
f = 900 MHz
= 5 V, IC = 5 mA,
V
CE
f = 900 MHz
Rev.3.00 Aug 10, 2005 page 2 of 5
2SC5051
Main Characteristics
Maximum Collector Dissipation Curve
120
(mW)
100
C
FE
200
160
DC Current Transfer Ratio
vs. Collector Current
V = 5V
CE
80
60
40
20
Collector Power Dissipation P
0 50 100 150
Ambient Temperature Ta (°C)
Gain Bandwidth Product
vs. Collector Current
12
V = 5 V
(GHz)
T
CE
10
8
6
4
120
80
40
DC Current Transfer Ratio h
0
12 51020
Collector Current IC (mA)
Collector Output Capacitance vs.
Collector to Base Voltage
0.9
(pF)
ob
0.8
0.7
0.6
I = 0
E
f = 1 MHz
50
2
Gain Bandwidth Product f
0
12 51020 50
Collector Current IC (mA)
Power Gain vs. Collector Current
20
V = 5V
CE
f = 900 MHz
16
12
8
Power Gain PG (dB)
4
0
12 51020
Collector Current IC (mA)
50
0.5
Collector Output Capacitance C
0.4
12 51020
0.5
Collector to Base Voltage VCB (V)
Noise Figure vs. Collector Current
5
4
3
2
Noise Figure NF (dB)
1
0
1
2
51020
Collector Current IC (mA)
V = 5V
CE
f = 900MHz
50
Rev.3.00 Aug 10, 2005 page 3 of 5
2SC5051
S21 Parameter vs. Collector Current
20
V = 5V
(dB)
2
2121
S Parameter |S |
CE
f = 1 GHz
16
12
8
4
0
12 51020
50
Collector Current IC (mA)
Rev.3.00 Aug 10, 2005 page 4 of 5
2SC5051
Package Dimensions
SC-70 0.006g
D
RENESAS CodeJEITA Package Code Package Name
CMPAK / CMPAKVPTSP0003ZA-A
A
e
MASS[Typ.]
Q
c
EH
E
L
P
L
AA
x
M
b
b
1
c
A-A Section
AS
b
A
2
A
A
1
S
c
1
L
1
A
3
e
l
1
b
2
Pattern of terminal position areas
Reference Symbol
e
1
Min Nom Max
A
A
1
A
2
A
3
b
0.25
b
1
c
c
1
D
1.15
E e
H
E
L
L
1
L
P
x
b
2
e
1
l
1
Q
Dimension in Millimeters
0.8 0
0.8
0.9
0.25
0.32
0.3
0.13
0.1
0.11
2.0
1.8
1.25
0.65
2.1
1.8
0.3
0.1
0.2
1.5
0.2
1.1
0.1
1.0
0.4
0.15
2.2
1.35
2.4
0.7
0.5
0.6
0.05
0.45
0.9
Ordering Information
Part Name Quantity Shipping Container
2SC5051YZ-TR-E 3000 φ 178 mm Reel, 8 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.3.00 Aug 10, 2005 page 5 of 5
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
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