Renesas 2SC4308 User Manual

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2SC4308
Silicon NPN Epitaxial Planar
Application
VHF Wide band amplifier
Outline
RENESAS Package code: PRSS0003DA-C (Package name: TO-92 (2))
REJ03G0723-0200
(Previous ADE-208-1103)
Rev.2.00
1. Base
2. Emitter
3. Collecto
3
2
1
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V Collector to emitter voltage V Emitter to base voltage V Collector current IC 300 mA Collector peak current i Collector power dissipation PC 600 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C
30 V
CBO
20 V
CEO
3 V
EBO
500 mA
C (peak)
Rev.2.00 Aug 10, 2005 page 1 of 5
2SC4308
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown voltage V Collector to emitter breakdown voltage V Collector cutoff current I Emitter cutoff current I DC current transfer ratio hFE 50 — 200 VCE = 5 V, IC = 50 mA Gain bandwidth product fT 1.5 2.5 — GHz VCE = 5 V, IC = 50 mA Collector output capacitance Cob 4.0 pF VCB = 10 V, IE = 0, f = 1 MHz
30 — — V IC = 100 µA, IE = 0
(BR)CBO
20 — — V IC = 1 mA, RBE =
(BR)CEO
— — 1 µA VCB = 25 V, IE = 0
CBO
— — 10 µA VEB = 3 V, IE = 0
EBO
Rev.2.00 Aug 10, 2005 page 2 of 5
2SC4308
Main Characteristics
Maximum Collector Dissipation Curve
600
(mW)
C
400
200
Collector Power Dissipation P
0
50 100
Ambient Temperature Ta (°C)
DC Current Transfer Ratio vs.
Collector Current
1,000
FE
VCE = 5 V Pulse Test
150
Typical Output Characteristics
200
(mA)
C
100
4.0
3.5
3.0
Collector Current I
01.0
Collector to Emitter Voltage VCE (V)
Base to Emitter Voltage vs.
Collector Current
10
(V)
BE
2.5
2.0
1.5
0.1
0.5mA
IB = 0
2.0
VCE = 5 V Pulse Test
100
25
DC Current Transfer Ratio h
10
110100
Collector Current I
Collector to Emitter Saturation
Voltage vs. Collector Current
1.0
Ta = 75°C
25
(V)
0.1
CE(sat)
V
IC = 10 I
B
Pulse Test
–25
Ta = 75°C
–25
(mA)
C
1,000
1.0
25
Base to Emitter Voltage V
0.1 110100
Collector Current I
Gain Bandwidth Product vs.
Collector Current
10,000
(MHz)
T
1,000
Ta = –25°C
75
(mA)
C
VCE = 5 V
1,000
0.01
Collector to Emitter Saturation Voltage
110100
Collector Current I
Rev.2.00 Aug 10, 2005 page 3 of 5
(mA)
C
1,000
Gain Bandwidth Product f
100
110100
Collector Current I
(mA)
C
1,000
2SC4308
Collector Output Capacitance
vs. Collector Current
100
(pF)
ob
10
Collector Output Capacitance C
110
Collector to Base Voltage V
f = 1 MHz
= 0
I
E
(V)
CB
100
Emitter Input Capacitnce vs.
Emitter to Base Votlage
100
(pF)
ib
10
Emitter Input Capacitance C
1
1.00.1
Emitter to Base Voltage V
f = 1 MHz I
= 0
C
(V)
EB
10
Rev.2.00 Aug 10, 2005 page 4 of 5
2SC4308
Package Dimensions
RENESAS CodeJEITA Package Code
PRSS0003DA-C TO-92(2) / TO-92(2)V
0.60 Max
Package Name
4.8 ± 0.3
0.5 Max
1.27
2.54
MASS[Typ.]
0.7
0.25gSC-43A
5.0 ± 0.2
2.3 Max
12.7 Min
Unit: mm
3.8 ± 0.3
0.5 Max
Ordering Information
Part Name Quantity Shipping Container
2SC4308TZ-E 2500 Hold Box, Radial Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Aug 10, 2005 page 5 of 5
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
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Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
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© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0
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