Renesas 2SC4308 User Manual

r

2SC4308

Silicon NPN Epitaxial Planar

Application

VHF Wide band amplifier

Outline

RENESAS Package code: PRSS0003DA-C
(Package name: TO-92 (2))

REJ03G0723-0200

(Previous ADE-208-1103)

Rev.2.00

Aug.10.2005

1. Base

2. Emitter

3. Collecto

3

2

1

Absolute Maximum Ratings

(Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current IC 300 mA
Collector peak current i
Collector power dissipation PC 600 mW
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

30 V

CBO

20 V

CEO

3 V

EBO

500 mA

C (peak)

Rev.2.00 Aug 10, 2005 page 1 of 5

2SC4308

Electrical Characteristics

(Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to base breakdown voltage V
Collector to emitter breakdown voltage V
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio hFE 50 — 200 VCE = 5 V, IC = 50 mA
Gain bandwidth product fT 1.5 2.5 — GHz VCE = 5 V, IC = 50 mA
Collector output capacitance Cob — 4.0 — pF VCB = 10 V, IE = 0, f = 1 MHz

30 — — V IC = 100 µA, IE = 0

(BR)CBO

20 — — V IC = 1 mA, RBE = ∞

(BR)CEO

— — 1 µA VCB = 25 V, IE = 0

CBO

— — 10 µA VEB = 3 V, IE = 0

EBO

Rev.2.00 Aug 10, 2005 page 2 of 5