Rainbow Electronics W27E520 User Manual

Advance Information W27E520

OE

64K ×× 8 ELECTRICALLY ERASABLE EPROM

GENERAL DESCRIPTION

The W27E520 is a high speed, low power Electrically Erasable and Programmable Read Only
Memory organized as 65,536 × 8 bits. It includes latches for the lower 8 address lines to multiplex
with the 8 data lines. To cooperate with the MCU, this device could save the external TTL
component, also cost and space. It requires only one supply in the range of 4.5V to 5.5V in normal
read mode. The W27E520 provides an electrical chip erase function. It will be a great convenient
when you need to change/update the contents in the device.

FEATURES

• High speed access time: 70/90 nS (max.)

• Read operating current: 20 mA (max.)

• Erase/Programming operating current

30 mA (max.)

• Standby current: 100 µA (max.)

• Unregulated battery power supply range,

4.5V to 5.5V

• +13V erase and programming voltage

• High Reliability CMOS Technology

- 2K V ESD Protection

- 200 mA Latchup Immunity

• Fully static operation

• All inputs and outputs directly LVTTL/CMOS

compatible

• Three-state outputs

• Available packages: 20-pin TSSOP and 20-pin

SOP

PIN CONFIGURATIONS

A14

V

DD

A9

1
2
3
4
5
6
7
8
9
10

1
2
3
4
5
6
7
8
9
10

TSSOP

Top View

SOP

Top View

A10
A12

ALE

OE/VPP

A15
A13
A11

OE/VPP

A15

A13

A11

A9

AD0

AD2
AD4
AD6

GND

20
19
18
17
16
15
14
13
12
11

BLOCK DIAGRAM

20

A8
AD1

19

AD3

18

AD5

17

AD7

16

GND

15

AD6

14
13

AD4

12

AD2

AD0

11

VDD

ALE
A14
A12
A10
A8
AD1
AD3
AD5
AD7

PIN DESCRIPTION

SYMBOL DESCRIPTION

AD0−AD7

A8−A15

ALE Address Latch Enable

VDD Power Supply

GND Ground

OE / V

AD7 - AD0

A15 - A8

/VPP

ALE

V

GND

CONTROL

PP

L
A
T
C
H
E
S

DECODER

DD

OUTPUT
BUFFER

MEMORY

ARRAY

Address/Data Inputs/Outputs
Address Inputs

Output Enable, Program/Erase
Supply Voltage

Publication Release Date: 4/26/2000

- 1 - Revision A1

Advance Information W27E520

OE

OE

FUNCTIONAL DESCRIPTION

Read Mode

Unlike conventional UVEPROMs, which has CE and OE two control functions, the W27E520 has one

/VPP and one ALE (address_latch_enable) control functions. The ALE makes lower address A[7:0]

to be latched in the chip when it goes from high to low, so that the same bus can be used to output
data during read mode. i.e. lower address A[7:0] and data bus DQ[7:0] are multiplexed. OE/VPP

controls the output buffer to gate data to the output pins. When addresses are stable, the address
access time (TACC) is equal to the delay from ALE to output (TCE), and data are available at the

outputs TOE after the falling edge of OE/VPP, if TACC and TCE timings are met.

Erase Mode

The erase operation is the only way to change data from "0" to "1." Unlike conventional UVEPROMs,
which use ultraviolet light to erase the contents of the entire chip (a procedure that requires up to half
an hour), the W27E520 uses electrical erasure. Generally, the chip can be erased within 100 mS by
using an EPROM writer with a special erase algorithm.

There are two ways to enter Erase mode. One is to raise OE/VPP to VPE (13V), VDD = VDE (6.5V), A9
= VHH (13V), A10 = high A8&A11 = low, and all other address pins include AD[7:0] keep at fixed low
or high. Pulsing ALE high starts the erase operation. The other way is somewhat like flash, by
programming two consecutive commands into the device and then enter Erase mode. The two
commands are loading Data = AA(hex) to Addr. = 5555(hex) and Data = 10(hex) to Addr. =
2AAA(hex). Be careful to note that the ALE pulse widths of these two commands are different: One is
50uS, while the other is 100mS. Please refer to the Smart Erase Algorithm 1 & 2.

Erase Verify Mode

The device will enter the Erase Verify Mode automatically after Erase Mode. Only power down the
device can force the device enter Normal Read Mode again.

Program Mode

Programming is the only way to change cell data from "1" to "0." The program mode is entered when

/VPP is raised to VPP (13V), VDD = VDP (6.5V), the address pins equal the desired addresses, and

the input pins equal the desired inputs. Pulsing ALE high starts the programming operation.

Program Verify Mode

The device will enter the Program Verify Mode automatically after Program Mode. Only power down
the device can force the device enter Normal Read Mode again.

Erase/Program Inhibit

Erase or program inhibit mode allows parallel erasing or programming of multiple chips with different
data. When ALE low, erasing or programming of non-target chips is inhibited, so that except for the

ALE and OE/VPP pins, the W27E520 may have common inputs.

Standby Mode

The standby mode significantly reduces VDD current. This mode is entered when ALE and OE/VPP
keep high. In standby mode, all outputs are in a high impedance state.

System Considerations

- 2 -

Advance Information W27E520

OE

An EPROM's power switching characteristics require careful device decoupling. System designers are
interested in three supply current issues: standby current levels (ISB), active current levels (IDD), and
transient current peaks produced by the falling and rising edges of ALE Transient current magnitudes
depend on the device output's capacitive and inductive loading. Proper decoupling capacitor selection
will suppress transient voltage peaks. Each device should have a

0.1 µF ceramic capacitor connected between its VDD and GND. This high frequency, low inherent­inductance capacitor should be placed as close as possible to the device. Additionally, for every eight
devices, a 4.7 µF electrolytic capacitor should be placed at the array's power supply connection
between VDD and GND. The bulk capacitor will overcome voltage slumps caused by PC board trace
inductances.

TABLE OF OPERATING MODES

(VPP = 13V, VPE = 13V, VHH = 12V, VDP = 6.5V, VDE = 6.5V, VDD = 5.0V, VDI = 5.0V, X = VIH or VIL)

MODE PIN

ALE

Address Latch Enable VIH VIH X VDD A[7:0]
Read VIL VIL AIN VDD DOUT
Output Disable VIL VIH X VDD High Z
Standby VIH VIH AIN VDD A[7:0]
Program VIH VPP AIN VDP DIN
Erase 1 VIH VPE A8&A11 = VIL, A9 = VPE,

Erase 2 VIH VPE First command:

Product Identifier­manufacturer

Product Identifier-device VIL VIL A8 = VIH, A9 = VHH, Others = X VDI 1F(Hex)

VIL VIL A8 = VIL, A9 = VHH, Others = X VDI DA(Hex)

/VPP

OTHER ADDRESS VDD AD[7:0]

VDE X

A10 = VIH, Others = X

VDE AA(hex)

Addr. = 5555 (hex)

Secon command:

Addr. = 2AAA (hex)

VDE 10(hex)

Publication Release Date: 4/26/2000

- 3 - Revision A1

Advance Information W27E520

OE

DC CHARACTERISTICS

Absolute Maximum Ratings

PARAMETER RATING UNIT

Ambient Temperature with Power Applied -55 to +125
Storage Temperature -65 to +150
Voltage on all Pins with Respect to Ground Except

-2.0 to +7.0 V

/VPP, A9 and VDD Pins

Voltage on OE/VPP Pin with Respect to Ground

-2.0 to +7.0 V

Voltage on A9 Pin with Respect to Ground -2.0 to +7.0 V
Voltage VDD Pin with Respect to Ground -2.0 to +14.0 V

Note: 1. Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of

the device.

2. Minimum voltage is -0.6V DC which may undershoot to -2.0V for pulses of less than 20ns. Maximum output pin voltage is
VDD+0.75V DC which may overshoot to +7.0V for pulses of less than 20ns.

DC Erase Characteristics

(TA = 25° C ±5° C, VDD = 6.5V ±0.25V)

PARAMETER SYM. CONDITIONS LIMITS UNIT

MIN. TYP. MAX.

Input Load Current ILI VIN = VIL or VIH -10 - 10
VDD Erase Current ICP

ALE = VIH, OE/VPP = VPE
A8&A11 = VIL, A9 = VPE,
A10 = VIH, Others = X

VPP Erase Current IPP

ALE = VIH, OE/VPP = VPE
A8&A11 = VIL, A9 = VPE,

A10 = VIH, Others = X
Input Low Voltage VIL - -0.3 - 0.8 V
Input High Voltage VIH - 2.4 - VDD+0.3 V
Output Low Voltage

VOL IOL = 2.1 mA - - 0.45 V
(Verify)
Output High Voltage

VOH IOH = -0.4 mA 2.4 - - ­(Verify)
A9 SID Voltage VHH

VDD = 5V ± 10%
A9 Erase Voltage VPE - 12.75 13 13.25 V
VPP Erase Voltage VPE - 12.75 13 13.25 V
VDD Supply Voltage (Erase

VDE - 6.25 6.5 6.75 V

& Erase Verify)

Note: VDD must be applied simultaneously or before VPP and removed simultaneously or after VPP.

- - 30 mA

- - 30 mA

11.5 12 12.5 V

°C
°C

µA

CAPACITANCE

(VDD = 4.5V to 5.5V, TA = 25° C, f = 1 MHz)

PARAMETER SYMBOL MAX. UNIT

Input Capacitance CIN VIN = 0V 6 pF
Output Capacitance COUT VOUT = 0V 12 pF

- 4 -

Advance Information W27E520

Input

AC CHARACTERISTICS

AC Test Conditions

PARAMETER CONDITIONS

Input Pulse Levels 0V/3V
Input Rise and Fall Times 10 nS
Input and Output Timing Reference Level 1.5V/1.5V
Output Load CL = 100 pF, IOH/IOL = -0.4 mA/2.1 mA

AC Test Load and Waveforms

+1.3V

(IN914)

3.3K ohm

D

OUT

100 pF (Including Jig and Scope)

Output

3V

0V

Test Points Test Points

1.5V

1.5V

Publication Release Date: 4/26/2000

- 5 - Revision A1

Advance Information W27E520

READ OPERATION DC CHARACTERISTICS

(VDD = 4.5V to 5.5V, TA = 0 to 70° C)

PARAMETER SYM. CONDITIONS LIMITS UNIT

MIN. TYP. MAX

.

Input Load Current ILI VIN = 0V to VDD -5 - 5
Output Leakage Current ILO VOUT = 0V to VDD -5 - 5
Standby VDD Current

(CMOS input)
VDD Operating Current IDD

Input Low Voltage VIL - -0.6 - 0.8 V
Input High Voltage VIH - 2.0 - VDD

Output Low Voltage VOL IOL = 2.1 mA - - 0.4 V
Output High Voltage VOH IOH = -0.4 mA 2.4 - - V

ALE = VDD ±0.3V, OE/VPP = VDD ±0.3V

ISB

All others inputs
= GND/ VDD ±0.3V

ALE = VIL, IOUT = 0 mA
f = 5 MHz

- - 100

- - 20 mA

+0.3

µA
µA
µA

V

READ OPERATION AC CHARACTERISTICS

(VDD = 4.5V to 5.5V, TA = 0 to 70° C)

PARAMETER SYM. W27E520-70 W27E520-90 UNIT

MIN. MAX. MIN. MAX

.

Address Latch Enable Access Time TCE - 70 - 90 nS
Address Latch Enable Width TALE 45 - 45 - nS
Address Access Time TACC - 70 - 90 nS
Address Setup Time TAS 15 - 15 - nS
Address Hold Time TAH 15 - 15 - nS
Output Enable Access Time TOE - 35 - 35 nS

OE /VPP High to High-Z Output

Output Hold from Address Change TOH 0 - 0 - nS

Note: VDD must be applied simultaneously or before VPP and removed simultaneously or after VPP.

TDF - 25 - 25 nS

- 6 -

Advance Information W27E520

DC PROGRAMMING CHARACTERISTICS

(VDD = 6.5V ±0.25V, TA = 25° C ±5° C)

PARAMETER SYM. CONDITIONS LIMITS UNIT

MIN. TYP. MAX.

Input Load Current ILI VIN = VIL or VIH -10 - 10
VDD Program Current ICP ALE = VIH,

OE /VPP = VPP

VPP Program Current IPP ALE = VIH,

OE /VPP = VPP

Input Low Voltage VIL - -0.3 - 0.8 V
Input High Voltage VIH - 2.4 - VDD+0.5 V
Output Low Voltage (Verify) VOL IOL = 2.1 mA - - 0.45 V
Output High Voltage (Verify) VOH IOH = -0.4 mA 2.4 - - V
A9 Silicon I.D. Voltage VHH
VPP Program Voltage VPP - 12.75 13.0 13.25 V
VDD Supply Voltage (Program) VDP - 6.25 6.5 6.75 V

VDD = 5V ± 10%

AC PROGRAMMING/ERASE CHARACTERISTICS

(VDD = 6.5V ±0.25V, TA = 25° C ±5° C)

PARAMETER SYM. LIMITS UNIT

OE /VPP Pulse Rise Time

Address Latch Enable Width TALE 500 - - nS
ALE Program Pulse Width TPPW 47.5 50 52.5
ALE Erase Pulse Width TEPW 95 100 105 mS
ALE Erase Pulse Width 1 TEPW1 47.5 50 52.5
ALE Erase Pulse Width 2 TEPW2 95 100 105 mS
Latched Address Setup Time TLAS 100 - - nS
Latched Address Hold Time TLAH 100 - - nS
Address Setup Time TAS 2.0 - ­Address Hold Time TAH 0 - -

OE /VPP Setup Time
OE /VPP Hold Time

Data Setup Time TDS 2.0 - ­Data Hold Time TDH 2.0 - -

Data Valid from OE /VPP Low during Erase Verify
Data Valid from OE /VPP Low during Program Verify

OE /VPP High to Output High Z
OE /VPP High Voltage Delay After ALE Low
OE /VPP Recovery Time

Note: VDD must be applied simultaneously or before VPP and removed simultaneously or after VPP.

TPRT 50 - - nS

TOES 2.0 - ­TOEH 2.0 - -

TEOE - - 150 nS
TPOE - - 150 nS
TDFP 0 - 130 nS

TVS 2.0 - ­TVR 2.0 - -

- - 30 mA

- - 30 mA

11.5 12.0 12.5 V

MIN. TYP. MAX.

µA

µS

µS

µS
µS
µS

µS
µS

µS

µS
µS

Publication Release Date: 4/26/2000

- 7 - Revision A1

TIMING WAVEFORMS

AC Read Waveform

V

ALE

IH

V

IL

V

IH

V

IL

V

IH

V

IL

High Z

A8-A15

OE/Vpp

AD0-AD7

Advance Information W27E520

Address Valid

ALE

T

CE

T

T

TAS

Address

T

OE

TAH

Data

ACC

TOH

DF

T

High Z

Programming Waveform

V

A[15:8]

OE/Vpp

ALE

AD[7:0]

V

13V

V

V

V

V

V
V

IH

IL

T

RPT

IH

IL

T

IH

IL

IH

IL

VS

ALE

T

T

LAS

PROGRAM PROGRAM (VERIFY)

AST

Address Stable

T

OES

OEH

T

T

VR

ALET

T

POE

Add

Add

T

PPW

T

T

T

LAH

DS

DH

Data in

DFP

T

Data out

AHT

- 8 -

Timing Waveforms, continued

Erase Waveform 1

Advance Information W27E520

A[15:8]

AD[7:0]

13.0V

OE/Vpp

ALE

Erase Waveform 2

Read
Company
SID

V
V

13.0V
V

V

IH

IL

IH
IL

A[15:8]

OE/Vpp

V

IH

V

IL

V

IH

V

IL

V

IH

V

IL

V

IH

V

IL

DD

V =5.0V
A9=12.0

V

Others=V

A8=VIL

DA

V = 5.0V

DD

Read
Device
SID

Read
Company
SID

A9 = 12.0V A9 = 13.0V

Others = V

A8 = V

DA

IL or V

IH

A8 = VIH

IL

1F

T

PRT

T

Read
Device
SID

or V

IL

A8=V

IH

IH

Command 1 Command 2
V =6.5V

DD

AST

T

RPT

1F

VS

T

T

PRT

Chip Erase Erase (Verify)

V = 6.5V

DD

Others = V

A8, A11 = V
A10 = V

IH

or V

IL

IH

IL

V = 6.5V

Address Valid

Add

T

VR

T

OES

OEH

T

EPW

Chip Erase

V =6.5V

DD

A[15:8] = 55 A[15:8] = 2A

OES

T

OEH

T

DD

D

OUT

T

EOE

Erase Verify

V =6.5V

DD

Address Valid

Add

D

OUT

V

IH

ALE

V

AD[7:0]

IL

V

IH

V

IL

T

OES

T

LAS

T

ALE

LAH

T

55 AA

EPW1

T

T

DS

Note: First command Address = 5555(hex) with Data = AA(hex)
Second command Address = 2AAA(hex) with Data = 10(hex)

T

EOE

EPW2T

T

DH

AA

10

Publication Release Date: 4/26/2000

- 9 - Revision A1

Advance Information W27E520

SMART PROGRAMMING ALGORITHM 1

Start

Address = First Location

V = 6.5V

DD

OE/Vpp = 13V

Increment
Address

Increment

Address

Last

Address ?

Power

Down

No

Yes

No

Pass

Program One 50 S Pulse

Address = First Location

Program One 50 S Pulse

µ

Last

Address ?

Yes

X = 0

Verify

Byte

µ

V = 5.0V

DD

OE/Vpp = V

IL

Fail

No

Increment X

X = 25 ?

Yes

Compare

All Bytes to

Original

Data

Pass

Device
Passed

- 10 -

Fail

Device
Failed

Advance Information W27E520

SMART PROGRAMMING ALGORITHM 2

Address = First Location

V = 6.5V

DD

Start

X = 0

Increment

Address

Fail

Program One 50 S Pulse

OE/Vpp = 13V

µ

Increment X

X = 25?

No

Verify One Byte

OE/Vpp = V

IL

Pass

No

Last Address
?

Yes

Power
Down

V =5.0V

DD

Compare

All Bytes to

Original

Data

Yes

Verify One Byte

OE/Vpp = V

Fail

Fail

IL

Pass

Pass

Device
Passed

Device
Failed

Publication Release Date: 4/26/2000

- 11 - Revision A1

SMART ERASE ALGORITHM 1

Advance Information W27E520

Start

X = 0

V = 6.5V

DD

OE/Vpp = 13V

Increment

Address

A9 = 13V; A8&A11 = V
A10 = V

Chip Erase 100 mS Pulse

Address = First Location

Increment X

V = 6.5VDD

OE/Vpp = V

No

Address?

IH

IL

Erase

Verify

Pass

Last

Yes

Power
Down

IL

No

Fail

X = 20?

Yes

V = 5.0V

DD

OE/Vpp = V

Compare
All Bytes to
FFs (HEX)

Pass

Pass
Device

IL

Fail

Fail
Device

- 12 -

SMART ERASE ALGORITHM 2

Advance Information W27E520

Start

X = 0

V = 6.5V

DD

OE/Vpp = 13V

Increment

Address

Program One 50 S Pulse

with Address = 5555(Hex) Data = AA(Hex)

Program One 100 mS Pulse

with Address = 2AAA(Hex) Data = 10(Hex)

Increment X

OE/Vpp = V

No

OE/Vpp = V

µ

V = 6.5V

DD

Erase

Verify

Pass

Last

Address?

Yes

Power

Down

V = 5.0V

DD

IL

Fail

IL

No

X = 20?

Yes

Compare

All Bytes to

FFs (HEX)

Pass

Pass

Device

Fail

Fail

Device

Publication Release Date: 4/26/2000

- 13 - Revision A1

ORDERING INFORMATION

Advance Information W27E520

PART NO. ACCESS

TIME

(nS)

OPERATING

CURRENT

MAX. (mA)

STANDBY

CURRENT

MAX. (µµA)

PACKAGE

W27E520W-70* 70 20 100 173mil TSSOP
W27E520W-90* 90 20 100 173mil TSSOP
W27E520S-70* 70 20 100 300mil SOP
W27E520S-90* 90 20 100 300mil SOP

Notes:

1. The Part No is preliminary and might be changed after project is consoled.

2. Winbond reserves the right to make changes to its products without prior notice.

3. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in applications
where personal injury might occur as a consequence of product failure.

- 14 -

PACKAGE DIMENSIONS

20-pin TSSOP

Advance Information W27E520

20-pin SOP

c

b

1

EE

e

D

A

1

A

b

1

E

E

e

D

1

A

L

Dimension in Inches

Symbol

Min. Nom. Max.

A

0.002

1

A
L
D

0.246

E

0.169 0.176

1

θ

c

L

E

0.007

b

0.003 0.007

c
e

θ

Symbol

A
A

0.65 BSC

0

Dimension in Inches

Min. Nom. Max.

0.092 2.34

0.003

1

L
D

0.393

E

0.291 0.299

1

θ

A

E

0.013

b

0.009 0.013

c

e

0

θ

0.50 BSC

Dimension in mm

Min. Nom. Max.

0.043

0.05

0.006

0.50

6.40

0.256

6.25

4.30

0.18

0.012

0.09

0.256 BSC

8 0 8

0.105

0.012

0.420

0.020

8 0 8

Dimension in mm

Min. Nom. Max.

0.076

0.381

12.6

9.98

7.39

0.330

0.229

1.27 BSC

1.10

0.15

0.700.0280.020

6.600.2600.252

6.50

4.48

0.30

0.18

2.67

0.305

0.8890.0350.015

13.00.5130.497

10.7

7.60

0.508

0.330

Publication Release Date: 4/26/2000

- 15 - Revision A1

Advance Information W27E520

VERSION HISTORY

VERSION DATE PAGE DESCRIPTION

A1 4/26/2000 - Initial Issued

Headquarters

No. 4, Creation Rd. III,
Science-Based Industrial Park,
Hsinchu, Taiwan
TEL: [phone]
FAX: [phone]
http://www.winbond.com.tw/
Voice & Fax-on-demand: 886-2-7197006

Winbond Electronics (H.K.) Ltd.

Rm. 803, World Trade Square, Tower II,
123 Hoi Bun Rd., Kwun Tong,
Kowloon, Hong Kong
TEL: [phone]
FAX: [phone]

Taipei Office

11F, No. 115, Sec. 3, Min-Sheng East Rd.,
Taipei, Taiwan
TEL: [phone]
FAX: [phone]

Note: All data and specifications are subject to change without notice.

- 16 -

Winbond Electronics North America Corp.
Winbond Memory Lab.
Winbond Microelectronics Corp.
Winbond Systems Lab.

2727 N. First Street, San Jose,
CA 95134, U.S.A.
TEL: [phone]

FAX: [phone]