(the purpose of this spec covers mainly for the
physical characteristic of the module, for register
configure and its related command info please refer
to RF12B data sheets
)
General Introduction
RFM12B is a low costing ISM band transceiver
module implemented with unique PLL. It works
signal ranges from 433/868/915MHZ bands, comply
with FCC, ETSI regulation. The SPI interface is
used to communicate with microcontroller for
parameter setting.
Features:
• Low costing, high performance and price ratio
• Tuning free during production
• PLL and zero IF technology
• Fast PLL lock time
• High resolution PLL with 2.5 KHz step
• High data rate (up to 115.2 kbps with internal demodulator,with external RC filter highest data rate is
256 kbps)
• Differential antenna input/output
• Automatic antenna tuning
• Programmable TX frequency deviation (from 15 to 240 KHz)
• Programmable receiver bandwidth (from 67 to 400 kHz)
• Analog and digital signal strength indicator (ARSSI/DRSSI)
• Automatic frequency control (AFC)
• Data quality detection (DQD)
• Internal data filtering and clock recovery
• RX synchron pattern recognition
• SPI compatible serial control interface
• Clock and reset signal output for external MCU use
nINT/VDI DI/ DO Interrupt input (active low)/Valid data indicator
VDD S Positive power supply
SDI DI SPI data input
SCK DI SPI clock input
nSEL DI Chip select (active low)
SDO DO Serial data output with bus hold
nIRQ DO
FSK/DATA/nFFS DI/DO/DI Transmit FSK data input/ Received data output (FIFO not used)/ FIFO
ESD Human body model 1000 V
Tst Storage temperature -55 125
Tld Soldering temperature(10s) 260
℃
℃
Recommended working range
symbol parameter minimum maximum Unit
Vdd Positive power supply 2.2 3.8 V
Top Working temperature -40 85
℃
DC characteristic
symbol parameter Remark minimumtypical maximum Unit
I
Supply current
dd_TX_0
(TX mode, P
I
dd_TX_PMAX
Supply current
(TX mode, P
I
Supply current
dd_RX
(RX mode)
= 0dBm)
out
= P
out
max
315,433MHz band
868MHz band
915MHz band
315,433MHz band
)
868MHz band
915MHz band
315,433MHz band
868MHz band
915MHz band
15
16
17
22
23
24
11
12
13
17
18
19
24
25
26
13
14
15
Ix Idle current Crystal oscillator on 0.62 1.2 mA
Ipd Sleep mode current All blocks off 0.3 uA
Ilb Low battery detection 0.5 uA
Vlb Low battery detect
0.1V per step 2.2 3.7 V
threshold
V
Low battery detection
lba
0 5 %
accuracy
Vil Low level input 0.3*Vdd V
Vih High level input 0.7*Vdd V
Iil Leakage current Vil=0V -1 1 uA
Iih Leakage current Vih=Vdd, Vdd=5.4V -1 1 uA
Vol Low level output Iol=2mA 0.4 V
Voh High level output Ioh=-2mA Vdd-0.4 V
example:1,RFM12B module at 433MHz band, DIP : RFM12B-433-D。
2,RFM12B mod ule at 868MHZ band, SMD, thickness at 4.2mm: RFM12B-868-S1。
This document may contain preliminary information and is subject to
change by Hope Microelectronics without notice. Hope
Microelectronics assumes no responsibility or liability for any use of
the information contained herein. Nothing in this document shall
operate as an express or implied license or indemnity under the
intellectual property rights of Hope Microelectronics or third parties.
The products described in this document are not intended for use in
implantation or other direct life support applications where malfunction
may result in the direct physical harm or injury to persons. NO
WARRANTIES OF ANY KIND, INCLUDING, BUT NOT LIMITED TO,
THE IMPLIED WARRANTIES OF MECHANTABILITY OR FITNESS
FOR A ARTICULAR PURPOSE, ARE OFFERED IN THIS
DOCUMENT.