QUICK LOGIC QL4090-2PQ240C, QL4090-2PQ240I, QL4090-3CF208C, QL4090-3CF208I, QL4090-3CF208M Datasheet

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Device Highlights

High Performance & High Density

• 90,000 Usable PLD Gates with 316 I/Os

• 300 MHz 16-bit Counters, 400 MHz

Datapaths, 160+ MHz FIFOs

• 0.35µm four-layer metal non-volatile CMOS

process for smallest die sizes

High Speed Embedded SRAM

• 22 dual-port RAM modules, organized in

user-configurable 1,152 bit blocks

• 5 ns access times, each port independently

accessible

• Fast and efficient for FIFO, RAM, and ROM

functions

Easy to Use / Fast Developm ent Cycles

• 100% routable with 100% utilization and

complete pin-out stability

• Variable-grain logic cells provide high

performance and 100% utilization

• Comprehensive design tools include high

quality Verilog/VHDL synthesis

Advanced I/O Capabilities

• Interfaces with both 3.3 V and 5.0 V devices

• PCI compliant with 3.3 V and 5.0 V busses

for -1/-2/-3/-4 speed grades

• Full JTAG boundary scan

• I/O Cells with individually controlled

Registered Input Path and Output Enables

Figure 1: QuickRAM Block Diagram

RA M

Blocks

1,58 4

Hi gh Sp eed

Logic Cells

Interface

QL4090 QuickRAM Data Sheet

90,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM

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QL4090 QuickRAM Data Sheet Rev H

Architecture Overview

The QuickRAMTM family of ESPs (Embedded Standard Products) offers FPGA logic in combination with Dual-Port SRAM modules. The QL4090 is a 90,000 usable PLD gate

member of the QuickRAM family of ESPs. QuickRAM ESPs are fabricated on a 0.35 µm

four-layer metal process using QuickLogic's patented ViaLink

technology to provide a

unique combination of high performance, high density, low cost, and extreme ease-of-use. The QL4090 contains 1,584 logic cells and 22 Dual Port RAM modules (see Figure 1). Each

RAM module has 1,152 RAM bits, for a total of 25,344 bits. RAM Modules are Dual Port (one read port, one write port) and can be configured into one of four modes: 64 (deep) x18 (wide), 128x9, 256x4, or 512x2 (see

Figure 4). With a maximum of 82 I/Os, the QL4090

is available in 208-pin PQFP, 208-pin CQFP 240-pin PQFP and 456-pin PBGA packages.

Designers can cascade multiple RAM modules to increase the depth or width allowed in single modules by connecting corresponding address lines together and dividing the words between modules (see

Figure 2). This approach allows up to 512-deep configurations as

large as 16 bits wide in the smallest QuickRAM device and 44 bits wide in the largest device.

Software support for the complete QuickRAM family, including the QL4090, is available through two basic packages. The turnkey QuickWorks

package provides the most complete ESP software solution from design entry to logic synthesis, to place and route, to simulation. The QuickTools

packages provides a solution for designers who use Cadence, Exemplar, Mentor, Synopsys, Synplicity, Viewlogic, Aldec, or other third-party tools for design entry, synthesis, or simulation.

The QuickLogic variable grain logic cell features up to 16 simultaneous inputs and 5 outputs within a cell that can be fragmented into 5 independent cells. Each cell has a fan-in of 29 including register and control lines (see

Figure 3).

Figure 2: QuickRAM Module Bits

RDATAWDATA

RADDR

RDATA

WADDR

WDATA

RAM

Module

(1,152 bits)

RAM

Module

(1,152 bits)

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QL4090 QuickRAM Data Sheet Rev H

Product Summary

Total of 316 I/O Pins

• 308 bi-directional input/output pins, PCI-compliant for 5.0 V and 3.3 V buses for

-1/-2/-3/-4 speed grades

• 8 high-drive input/distributed network pins

Eight Low-Skew Distributed Networks

• Two array clock/control networks available to the logic cell flip-flop clock, set and reset

inputs—each driven by an input-only pin

• Six global clock/control networks available to the logic cell F1, clock, set and reset inputs

and the input and I/O register clock, reset and enable inputs as well as the output enable control—each driven by an input-only or I/O pin, or any logic cell output or I/O cell feedback

High Performance Silicon

• Input + logic cell + output total delays under 6 ns

• Data path speeds over 400 MHz

• Counter speeds over 300 MHz

• FIFO speeds over 160+ MHz

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QL4090 QuickRAM Data Sheet Rev H

AC Characteristics at VCC = 3.3 V, TA = 25° C (K = 1.00)

To calculate delays, multiply the appropriate K factor from Table 10: Operating Range by the following numbers in the tables provided.

Figure 3: QuickRAM Logic Cell

Table 1: Logic Cell

Symbol Parameter

Propagation Delays (ns)

Fanout (5)

1 2 3 4 5

Combinatorial Delay

a. These limits are derived from a representative selection of the slowest paths through the Quick-

RAM logic cell including typical net delays. Worst case delay values for specific paths should be determined from timing analysis of your particular design.

1.4 1.7 1.9 2.2 3.2

Setup Time

1.7 1.7 1.7 1.7 1.7

Hold Time 0.0 0.0 0.0 0.0 0.0

CLK

Clock to Q Delay 0.7 1.0 1.2 1.5 2.5

CWHI

Clock High Time 1.2 1.2 1.2 1.2 1.2

CWLO

Clock Low Time 1.2 1.2 1.2 1.2 1.2

SET

Set Delay 1.0 1.3 1.5 1.8 2.8

RESET

Reset Delay 0.8 1.1 1.3 1.6 2.6

Set Width 1.9 1.9 1.9 1.9 1.9

Reset Width 1.8 1.8 1.8 1.8 1.8

A1 A2 A3 A4 A5 A6

F1 F2 F3 F4 F5 F6

QS OP B1 B2 C1 C2 MP MS

D1 D2 E1 E2 NP NS

QC QR

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QL4090 QuickRAM Data Sheet Rev H

Figure 4: QuickRAM Module

Table 2: RAM Cell Synchronous Write Timing

Symbol Parameter

Propagation Delays (ns)

Fanout

1 2 3 4 5

SWA

WA Setup Time to WCLK 1.0 1.0 1.0 1.0 1.0

HWA

WA Hold Time to WCLK 0.0 0.0 0.0 0.0 0.0

SWD

WD Setup Time to WCLK 1.0 1.0 1.0 1.0 1.0

HWD

WD Hold Time to WCLK 0.0 0.0 0.0 0.0 0.0

SWE

WE Setup Time to WCLK 1.0 1.0 1.0 1.0 1.0

HWE

WE Hold Time to WCLK 0.0 0.0 0.0 0.0 0.0

WCRD

WCLK to RD (WA=RA)

a. Stated timing for worst case Propagation Delay over process variation at VCC = 3.3 V and

= 25° C. Multiply by the app ropriate Delay Factor, K, for speed gra de, voltage and tempe ratur e

settings as specified in the Operating Range.

5.0 5.3 5.6 5.9 7.1

Table 3: RAM Cell Synchronous Read Timing

Symbol Parameter

Propagation Delays (ns)

Fanout

Logic Cells 1 2 3 4 5

SRA

RA Setup Time to RCLK 1.0 1.0 1.0 1.0 1.0

HRA

RA Hold Time to RCLK 0.0 0.0 0.0 0.0 0.0

SRE

RE Setup Time to RCLK 1.0 1.0 1.0 1.0 1.0

HRE

RE Hold Time to RCLK 0.0 0.0 0.0 0.0 0.0

RCRD

RCLK to RD

a. Stated timing for worst case Propagation Delay over process variation at VCC = 3.3 V and

= 25° C. Multiply by the app ropriate Delay Factor, K, for speed gra de, voltage and tempe ratur e

settings as specified in the Operating Range.

4.0 4.3 4.6 4.9 6.1

WCLK

RCLK

[8:0]

[17:0]

[8:0]

[17:0 ]

MODE ASYNCRD

[1:0]

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QL4090 QuickRAM Data Sheet Rev H

Table 4: RAM Cell Asynchronous Read Timing

Symbol Parameter

Propagation Delays (ns)

Fanout

1 2 3 4 5

RPDRD RA to RD

a. Stated timing for worst case Propagation Delay over process variation at VCC = 3.3 V and

= 25° C. Multiply by the app ropriate Delay Factor, K, for speed gra de, voltage and tempe ratur e

settings as specified in the Operating Range.

3.0 3.3 3.6 3.9 5.1

Table 5: Input-Only / Clock Cells

Symbol Parameter

Propagation Delays (ns)

Fanout

1 2 3 4 8 12 24

High Drive Input Delay 1.5 1.6 1.8 1.9 2.4 2.9 4.4

INI

High Drive Input, Inverting Delay 1.6 1.7 .19 2.0 2.5 3.0 4.5

ISU

Input Register Set-Up Time 3.1 3.1 3.1 3.1 3.1 3.1 3.1

Input Register Hold Time 0.0 0.0 0.0 0.0 0.0 0.0 0.0

ICLK

Input Register Clock To Q 0.7 0.8 1.0 1.1 1.6 2.1 3.6

IRST

Input Register Reset Delay 0.6 0.7 0.9 1.0 1.5 2.0 3.5

IESU

Input Register Clock Enable Setup Time 2.3 2.3 2.3 2.3 2.3 2.3 2.3

IEH

Input Register Clock Enable Hold Time 0.0 0.0 0.0 0.0 0.0 0.0 0.0

Table 6: Clock Cells

Symbol Parameter

Propagation Delays (ns)

Fanout

a. The array dist ribu ted ne tw ork s co nsi st of 40 ha lf columns and the glo bal d is tribu ted networks con-

sist of 44 half columns, each driven by an independent buffer. The number of half columns used does not affect clock buffer delay. The array clock has up to 8 loads per half column. The global clock has up to 11 loads per half column.

1 2 3 4 8 10 11

ACK

Array Clock Delay 1.2 1.2 1.3 1.3 1.5 1.6 1.7

GCKP

Global Clock Pin Delay 0.7 0.7 0.7 0.7 0.7 0.7 0.7

GCKB

Global Clock Buffer Delay 0.8 0.8 0.9 0.9 1.1 1.2 1.3

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QL4090 QuickRAM Data Sheet Rev H

Table 7: I/O Cell Input Delays

Symbol Parameter

Propagation Delays (ns)

Fanout

a. Stated timing for worst case Propagation Delay over process variation at V

= 3.3 V and

= 25° C. Multiply by the ap prop ria te D e lay Fa cto r, K, for speed grade, vo ltage and temperature

settings as specified in the Operating Range.

1 2 3 4 8 10

I/O

Input Delay (bidirectional pad) 1.3 1.6 1.8 2.1 3.1 3.6

ISU

Input Register Set-Up Time 3.1 3.1 3.1 3.1 3.1 3.1

Input Register Hold Time 0.0 0.0 0.0 0.0 0.0 0.0

IOCLK

Input Register Clock to Q 0.7 1.0 1.2 1.5 2.5 3.0

IORST

Input Register Reset Delay 0.6 0.9 1.1 1.4 2.4 2.9

IESU

Input Register Clock Enable Set-Up Time 2.3 2.3 2.3 2.3 2.3 2.3

IEH

Input Register Clock Enable Hold Time 0.0 0.0 0.0 0.0 0.0 0.0

Table 8: I/O Cell Output Delays

Symbol Parameter

Propagation Delays (ns)

Output Load Capacitance (pF)

3 50 75 100 150

OUTLH

Output Delay Low to High 2.1 2.5 3.1 3.6 4.7

OUTHL

Output Delay High to Low 2.2 2.6 3.2 3.7 4.8

PZH

Output Delay Tri-state to High 1.2 1.7 2.2 2.8 3.9

PZL

Output Delay Tri-state to Low 1.6 2.0 2.6 3.1 4.2

PHZ

Output Delay High to Tri-state

a. The following loads are used for t

PXZ

2.0 - - - -

PLZ

Output Delay High to Tri-state

1.2 - - - -

1ΚΩ

tPHZ

tPLZ

5 pF

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