CM150DU-12F
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 |
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P - NUTS (3 PLACES) |
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TC MEASURING |
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POINT |
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A |
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N |
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D |
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Q (2 PLACES) |
CM |
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E |
C2E1 |
E2 |
C1 |
E2G2 |
F |
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B |
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G |
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H |
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G1E1 |
F |
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M |
K |
K |
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J |
R |
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C |
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L |
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G2 |
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E2 |
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RTC |
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C2E1 |
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E2 |
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C1 |
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RTC |
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E1 |
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G1 |
Outline Drawing and Circuit Diagram
Dimensions |
Inches |
Millimeters |
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A |
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3.70 |
94.0 |
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B |
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1.89 |
48.0 |
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C |
1.18 +0.04/-0.02 30.0 +1.0/-0.5 |
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D |
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3.15±0.01 |
80.0±0.25 |
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E |
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0.43 |
11.0 |
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F |
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0.16 |
4.0 |
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G |
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0.71 |
18.0 |
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H |
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0.02 |
0.5 |
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Dimensions |
Inches |
Millimeters |
J |
0.53 |
13.5 |
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K |
0.91 |
23.0 |
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L |
1.13 |
28.7 |
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M |
0.67 |
17.0 |
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N |
0.28 |
7.0 |
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P |
M6.5 |
M6.5 |
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Q |
0.26 Dia. |
6.5 Dia. |
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R |
0.16 |
4.0 |
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Trench Gate Design
Dual IGBTMOD™
150 Amperes/600 Volts
Description:
Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-
bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features:
□Low Drive Power
□Low VCE(sat)
□Discrete Super-Fast Recovery Free-Wheel Diode
□Isolated Baseplate for Easy Heat Sinking
Applications:
□AC Motor Control
□UPS
□Battery Powered Supplies
Ordering Information:
Example: Select the complete module number you desire from the table - i.e. CM150DU-12F is a
600V (VCES), 150 Ampere Dual IGBTMOD™ Power Module.
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Current Rating |
VCES |
Type |
Amperes |
Volts (x 50) |
CM |
150 |
12 |
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1
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM150DU-12F
Trench Gate Design Dual IGBTMOD™
150 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings |
Symbol |
CM150DU-12F |
Units |
Junction Temperature |
Tj |
-40 to 150 |
°C |
Storage Temperature |
Tstg |
-40 to 125 |
°C |
Collector-Emitter Voltage (G-E SHORT) |
VCES |
600 |
Volts |
Gate-Emitter Voltage (C-E SHORT) |
VGES |
±20 |
Volts |
Collector Current (Tc = 25°C) |
IC |
150 |
Amperes |
Peak Collector Current |
ICM |
300* |
Amperes |
Emitter Current** (Tc = 25°C) |
IE |
150 |
Amperes |
Peak Emitter Current** |
IEM |
300* |
Amperes |
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) |
Pc |
520 |
Watts |
Mounting Torque, M5 Main Terminal |
– |
31 |
in-lb |
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Mounting Torque, M6 Mounting |
– |
40 |
in-lb |
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Weight |
– |
310 |
Grams |
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Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) |
Viso |
2500 |
Volts |
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics |
Symbol |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
Collector-Cutoff Current |
ICES |
VCE = VCES, VGE = 0V |
– |
– |
1 |
mA |
Gate Leakage Current |
IGES |
VGE = VGES, VCE = 0V |
– |
– |
20 |
A |
Gate-Emitter Threshold Voltage |
VGE(th) |
IC = 15mA, VCE = 10V |
5 |
6 |
7 |
Volts |
Collector-Emitter Saturation Voltage |
VCE(sat) |
IC = 150A, VGE = 15V, Tj = 25°C |
– |
1.6 |
2.2 |
Volts |
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IC = 150A, VGE = 15V, Tj = 125°C |
– |
1.6 |
– |
Volts |
Total Gate Charge |
QG |
VCC = 300V, IC = 150A, VGE = 15V |
– |
930 |
– |
nC |
Emitter-Collector Voltage** |
VEC |
IE = 150A, VGE = 0V |
– |
– |
2.6 |
Volts |
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
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