Powerex C154, C155, C156, C157 Data Sheet

HIGH SPEED

Silicon Controlled Rectifi

600 VOLTS 110A RMS

AMPLIFYING GATE

The General ElectIic C154, C155, C156 and C157 Silicon Controlled Rectifiers are designed for power switching at high frequencies. These are all diffused Pic-Pac devices employing the field proven amplifying gate.

FEATURES:

C154/155

"High di!dt ratings.

"High dv!dt capability with selections available.

" Excellent surge and 12 t ratings providing easy fusing.

"Guaranteed maximum turn·off time with selections available.

"Rugged hermetic package with long creepage path.

MAXIMUM ALLOWABLE RATINGS

REPETITIVE PEAK OFF·STATE

REPETITIVE PEAK REVERSE

NON·REPETITIVE PEAK

TYPES

VOLTAGE, VORMI

VOLTAGE, VRRMI

REVERSE VOLTAGE, VRSMI

TJ = ·40o C to +125°C

T J = .40 o C to +125°C

TJ = +125°C

C154A,

C155A,

100 Volts

100 Volts

160

Volts

C156A,

C157A

C154B,

C155B,

200

200

260

C156B,

C157B

C154C,

C155C,

300

300

380

C156C,

C157C

C154D,

C155D,

400

400

480

C156D,

C157D

C154E,

C155E,

500

500

600

C156E,

C157E

C154M,

C155M,

600

600

720

C156M,

C157M

1 Half sinewave waveform, 10 ms max. pulse width.

RMS On-State Current, IT(RMS)' ....................................................			110 Amperes
Peak One Cycle Surge (Non-Repetitive) On-State Current, ITSM (60 Hz) ........................			1800 Amperes
Peak One Cycle Surge (Non-Repetitive) On-State Current, ITSM (50 Hz) ........................			1700 Amperes
Critical Rate-of-Rise of On-State Current, Non-Repetitive ... . . . . . . . . . . . . . .			. . . . . . . . . . . . . . . . . .. 800 A!/ls 'I
Critical Rate-of-Rise of On-State Current, Repetitive. . . . . . . . . . . . . . . . . . . . .			. . . . . . . . . . . . . . . . . .. 500 A!/ls 'I
I2 t (for fusing) for times? 1.5 milliseconds . . . . .		. . . . . . . . . . . . . . . . . . . . .	. . . .. 9,500 (RMS Ampere? Seconds
12 t (for fusing) for times? 8.3 milliseconds ...............................			13,500 (RMS Ampere)2 Seconds
Average Gate Power Dissipation, PG(AV)	. . . . . . . .	. . . . . . . . . . . . . . . . . . . . .	. . . . . . . . . . . . . . . . . . . .. 2 Watts
Storage Temperature, Tstg .......................................................			AO°C to +150°C
Operating Temperature, TJ .....................................................			. AO°C to +125°C
Stud Torque ................................................			150 Lb.-In. (Max.), 125 Lb.-ln. (Min.)
			17 N-m (Max.), 14 N-m (Min.)
t di / dt ratings established in accordance with	EIA-NEMA	Standard RS-397, Section 5.2.2.6	for conditions of max. rated VORM; 20 volts,
20 ohms gate trigger source with 0.511s short	circuit trigger	current rise lime.

823

C154,C156
C155,C157	CHARACTERISTICS

TEST

SYMBOL

MIN.

TYP.

MAX.

UNITS

TEST CONDITIONS

Repetitive Peak Reverse

IRRM

-

5

12

rnA

T J

= +25°C

and Off-State Current

and

IORM

V = VORM = VRRM

Repetitive Peak Reverse

IRRM

-

12

17

rnA

T J

=125°C

and Off-State Current

and

IORM

V = VORM = VRRM

Thermal Resistance

ReJc

-

.2

.3

°C/Watt

J unction-to-Case

Critical Rate-of-Rise of

dv/dt

V//lsec

TJ

= + 125°C, Gate Open. VORM = Rated,

Off-State Voltage (Higher

Linear or Exponential Rising Waveform

values may cause device

.

VORM

switching)

Exponential dv/dt = -- (.632)

T

C154/C156

200

500

-

C155/C157

100

300

-

For

higher

minimum dv/dt selections - consult factory.

Holding Current

IH

-

100

mAdc

Tc = +25°C, Anode Supply = 24 Vdc.

Initial On-State Current = 2 Amps.

DC Gate Trigger Current

IGT

-

50

150

mAdc

Tc =

+25°C, Vo = 6 Vdc, RL = 3 Ohms

-

100

200

Tc =

-40°C, Vo = 6 Vdc, RL = 3 Ohms

-

30

120

Tc = +125°C, Vo = 6Vdc, RL = 3 Ohms

DC Trigger Voltage

VGY

3.0

5.0

Vdc

TC ==

-40°C to O°C, Vo = 6Velc,

RL = 3 Ohms

-

1.25

3.0

Tc ==

O°C to +125°C, Vo = 6Vdc,

RL = 3 Ohms

0.15

Tc ==

+125°C, VORM , RL == 1000 Ohms

Peak On-State Voltage

VTM

-

2.2

3.0

Volts

Tc

= +25°C, ITM

= 500 Amps. Peak

Duty Cycle < .01 %

Turn-On Delay Time

td

-

1

/lsec

Tc = +25°C, IT = 50 Adc, VORM, Gate

Supply: 20 Volt Open Circuit, 20 Ohms,

0.1 /lsec max. rise time.

Conventional Circuit

tq

/lsec

(1)

Tc

= +125°C

Commutated Turn-Off

(2)

ITM

=·150 Amps.

Time (with Reverse

(3)

V R == 50 Volts Min.

Voltage)

(4)

VORM (Reapplied)

C154/C156

-

8

10

(5)

Rate-of-Rise of Reapplied Off-State

Voltage == 20 V//lsec (linear)

C155/C157

-

12

20

(6)

Commutation eli/dt = 5 Amps//lsec.

(7)

Duty Cycle < .01%

(8)

Gate Bias During Turn-Off Interval ==

o Volts, 100 Ohms

Conventional Circuit

tq(diode)

/lsec

(1)

Tc

== +125°C

Commutateel Tum-Off

(2)

ITM = 150 Amps.

Time (with Feedback)

(3)

V R = 1 Volt

Diode)

(4)

VORM (Reapplied)

C154/C156

-

12

t

(5)

Rate-of-Rise of Reapplied Off-State

Voltage == 20 V//lsec

C155/C157

-

15

i"

(6)

Commutation eli/elt = 5 Amps//lsec

(7)

Duty Cycle < .01%

(8) Gate Bias During Turn-Off Interval =

o Volts, 100 Ohms

tConsult factory for specified maximum turn-off time.

824

SINE WAVE DATA		C154, C156
		C155,C157

2000

I I

Ul

1500

w

10~A/JS./

/

a..

~uzJ~lll

a::

w

1000

:l;

I

800

"'~I?

<t

--

......

s~C

Z

f-

400

~

6'0

u

w

600

' ......"OtvD

a::

-

a::

........

........

:::>

w

..,fOoo

"::"00

.......

r--..,

!;t

300

V

--

f-

Ul

..........

......

i'

i'

I

z

200

0

2500

'"

150

-

..-

ILl

w

<t

100

V

a..

10

100

1000

10K

PULSE BASE WIDTH-MICROSECONDS

1. Maximum allowable peak on-state current vs. pulse width (T c = 65°C)

2000

I

1500

Ul

100 AI,.,. 5

I) I

a::

1000

/ ....

r-.....

w

u

w

a..

800

Zs

:l;

~s

f:J~1?

I

<t

600

f-

'-.......s~c

Z

a::

~tvD

W

a::

400

-

-

i'

i3

300

/"

w

"",

60

U)~

200

'"

....--

r

I

i'

"'400

Z

1000

0

'"

1111

<t

~

100

2500

80

10

100

1000

10K

PULSE BASE WIDTH-MICROSECONDS

2. Maximum allowable peak on-state current vs. pulse width (T c = 90°C)

NOTES:

(Pertaining to Sine and Rectangular Wave Current Ratings)

1.Switching voltage <400 volts.

2.Maximum ckt. dv/dt = 100 volts/)isec.

3.Required gate drive:

20 volts, 20 ohms, .5 )isec rise time.

4. Reverse voltage applied = VR < 400 volts.

5.R-C Snubber ckt. = .25 )if, 5 ohms.

6.Max. energy dissipated during reverse recovery to be 15% of total W-S/P shown or 0.03 W-S/P, whichever is least.

7.Va lues of W-S/P are for Tj = 125°C.

825