Philips Z0103MA, Z0103MN, Z0103NA, Z0103NN, Z0107MA Datasheet

1. Product proﬁle

1.1 Description

1.2 Features

Z0103/07/09 series

Triacs

Rev. 02 — 12 September 2002 Product data

Passivatedtriacs in conventional and surfacemounting packages. Intended for use in applications requiring high bidirectional transient and blocking voltage capability. Available in a range of gate current sensitivities for optimum performance.

Product availability:

Z0103MA; Z0103NA; Z0107MA; Z0107NA; Z0109MA; Z0109NA in SOT54B Z0103MN; Z0103NN; Z0107MN; Z0107NN; Z0109MN; Z0109NN in SOT223.

■ Blocking voltage to 800 V (NA and NN

■ 1 A on-state RMS current.

types)

1.3 Applications

■ Home appliances ■ Small motor control

■ Fan controllers ■ Small loads in industrial process

control.

2. Pinning information

Table 1: Pinning - SOT54B (TO-92), SOT223, simpliﬁed outline and symbol

Pin Description Simpliﬁed outline Symbol

1 terminal 2 (T2) SOT54B 2 gate (G) 3 terminal 1 (T1) 1 terminal 1 (T1) SOT223 2 terminal 2 (T2) 3 gate (G) 4 terminal 2 (T2)

(TO-92)

1

2

3

MSB033

123

Top view

4

MSB002 - 1

T2

T1

G

MBL300

SOT54B (TO-92)

SOT223

Philips Semiconductors

Z0103/07/09 series

3. Ordering information

3.1 Ordering options

Table 2: Ordering information

Part Number Voltage (V

Z0103MA 600 V 3 mA SOT54B (TO-92) Z0103NA 800 V 3 mA SOT54B (TO-92) Z0107MA 600 V 5 mA SOT54B (TO-92) Z0107NA 800 V 5 mA SOT54B (TO-92) Z0109MA 600 V 10 mA SOT54B (TO-92) Z0109NA 800 V 10 mA SOT54B (TO-92) Z0103MN 600 V 3 mA SOT223 Z0103NN 800 V 3 mA SOT223 Z0107MN 600 V 5 mA SOT223 Z0107NN 800 V 5 mA SOT223 Z0109MN 600 V 10 mA SOT223 Z0109NN 800 V 10 mA SOT223

) Gate Sensitivity (IGT) Package

DRM

Triacs

4. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DRM

V

RRM

I

TSM

I

T(RMS)

2

tI

I dI

T

I

GM

P

GM

P

G(AV)

T

stg

T

j

9397 750 10102

Product data Rev. 02 — 12 September 2002 2 of 12

repetitive peak off-state voltage 25 °C ≤ Tj≤ 125 °C

Z0103/07/09MA; Z0103/07/09MN - 600 V Z0103/07/09NA; Z0103/07/09NN - 800 V

repetitive peak reverse voltage 25 °C ≤ Tj≤ 125 °C

Z0103/07/09MA; Z0103/07/09MN - 600 V Z0103/07/09NA; Z0103/07/09NN - 800 V

non-repetitive peak on-state current full sine wave; Tj= 25 °C prior to surge;

Figure 2 and Figure 3

t=20ms - 8 A t = 16.7 ms - 8.5 A

RMS on-state current all conduction angles; Figure 4

SOT223 T SOT54B (TO-92) T

2

t for fusing t = 10 ms - 0.35 A2s

=90°C-1A

sp

=50°C-1A

lead

/dt rate of rise of on-state current ITM= 1.0 A; IG=2xIGT; dIG/dt = 100 mA/µs - 20 A/µs

peak gate current tp=20µs - 1.0 A peak gate power - 2.0 W average gate power over any 20 ms period - 0.1 W storage temperature −40 +150 °C junction temperature −40 +125 °C

Philips Semiconductors

Z0103/07/09 series

Triacs

P

tot

(W)

1.6

1.2

0.8

0.4

003aaa199

I

T(RMS)

α =

180° 120°

90° 60°

30°

1.20 0.4 0.8

(A)

α

0

I

TSM

(A)

10

8

6

4

2

0

1

10

α = conduction angle n = number of cycles at f = 50 Hz

Fig 1. Maximum on-state power dissipation as a

function of RMS on-state current; typical values.

003aaa207

I

TSM

(A)

2

10

δIT/δt limit

10

Fig 2. Maximum permissible non-repetitive peak

on-state current as a function of number of cycles for sinusoidal currents; typical values.

1.2

I

T(RMS)

(A)

0.8 SOT54B

(T

lead

003aaa200

2

10

SOT223

)

(Tsp)

n

003aaa201

3

10

1

-1

10

-5

10

-4

10

-3

10

ts (s)

Fig 3. Maximum permissible non-repetitive peak

on-state current as a function of surge duration for sinusoidal currents; typical values.

9397 750 10102

-2

10

Fig 4. Maximum permissible RMS on-state current as

0.4

0

50

1000

T

lead, Tsp

150

(°C)

a function of lead temperature and solder point temperature; typical values.

Product data Rev. 02 — 12 September 2002 3 of 12

Philips Semiconductors

Z0103/07/09 series

Triacs

5. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-sp)

R

th(j-lead)

R

th(j-a)

thermal resistance from junction to solder

Figure 5

point for SOT223 thermal resistance from junction to lead for

Figure 5

SOT54B (TO-92) thermal resistance from junction to ambient

SOT223 minimum footprint; mounted on a PCB - 60 - K/W SOT54B (TO-92) vertical in free air - 150 - K/W

5.1 Transient thermal impedance

--25K/W

--60K/W

10

a

1

-1

10

-2

10

-3

10

-4

10

Z

th j lead–()

=

a

---------------------------

R

th j lead–()

Z

th j sp–()

a

=

---------------------- -

R

th j sp–()

-5

SOT223

-4

10

for SOT54B (TO-92)

for SOT223

SOT54B

-3

10

-2

10

-1

10

11010

003aaa206

2

tp (s)

3

10

Fig 5. Transient thermal impedance from junction to lead and junction to solder point as a function of pulse

duration.

9397 750 10102

Product data Rev. 02 — 12 September 2002 4 of 12