Philips TEA0676T Datasheet

INTEGRATED CIRCUITS

DATA SH EET

TEA0676T

Dual pre-amplifier and equalizer for
reverse tape decks

Product specification
Supersedes data of 1996 Jun 20
File under Integrated Circuits, IC01

1997 Oct 07

Philips Semiconductors Product specification

Dual pre-amplifier and equalizer for

TEA0676T

reverse tape decks

FEATURES

• Dual head pre-amplifiers

• Reverse head switching

• Equalization with electronically switched time constants

• Output level like Dolby level of 387.5 mV = 0 dB

• Improved EMC behaviour.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CC

I

CC

SN+

-------------­N

V

o (rms)

supply voltage 7.6 10 12 V
supply current VCC=10V − 10 13 mA
signal plus noise-to-noise ratio unweighted RMS value 67 73 − dB

output voltage (0 dB) (RMS value) gain internal = 40 dB; linear − 387.5 − mV

GENERAL DESCRIPTION

The TEA0676T is a monolithic bipolar integrated circuit
intended for applications in car radios. It includes head and
equalization amplifiers with electronically switchable time
constants. Furthermore it includes electronically
switchable inputs for tape drivers with reverse heads.

The device will operate with power supplies in a range of

7.6 to 12.0 V. The output overload level increases with the
increase in supply voltage, so it is advisable to use a
regulated power supply or a supply with a long time
constant.

ORDERING INFORMATION

TYPE

NUMBER

TEA0676T SO16 plastic small outline package; 16 leads; body width 7.5 mm SOT162-1

NAME DESCRIPTION VERSION

PACKAGE

1997 Oct 07 2

Philips Semiconductors Product specification

Dual pre-amplifier and equalizer for
reverse tape decks

BLOCK DIAGRAM

handbook, full pagewidth

equalizer

switch

70 µs

10 µF

OUTB
16

120 µs

18 kΩ

EQSW

15

330 kΩ

10 nF

EQOUTB
14

8.2 kΩ

180 Ω

1 kΩ

EQINB
13

GND
12

10 µF

INB1
11

470

pF

head

switch

IN1

IN2

27 kΩ

HSW INB2
10

10
µF

TEA0676T

470

pF

9

TEA0676T

1

OUT A

10 µF

2
n.c.

LOGIC

3
EQOUT A

10 nF

330 kΩ

EQ
AMPLIFIER

EQ
AMPLIFIER

8.2 kΩ

4
EQINA

1 kΩ

180 Ω

5

V

CC

10 V

10 µF

INA1

PRE­AMPLIFIER

POWER
SUPPLY

PRE­AMPLIFIER

470

pF

µF

8
INA2

470

pF

MGE862

76
V

ref

100

Fig.1 Block and application diagram.

1997 Oct 07 3

Philips Semiconductors Product specification

Dual pre-amplifier and equalizer for
reverse tape decks

PINNING

SYMBOL PIN DESCRIPTION

OUTA 1 output channel A
n.c. 2 not connected
EQOUTA 3 output equalizer channel A
EQINA 4 input equalizer channel A
V

CC

INA1 6 input channel A1

V

ref

INA2 8 input channel A2

INB2 9 input channel B2

HSW 10 input head switch
INB1 11 input channel B1

GND 12 ground
EQINB 13 input equalizer channel B
EQOUTB 14 output equalizer channel B
EQSW 15 input equalizer switch
OUTB 16 output channel B

5 supply voltage

(forward or reverse)

7 reference voltage

(reverse or forward)

(reverse or forward)

(forward or reverse)

handbook, halfpage

EQOUTA

OUTA

1

n.c.

2
3

V

CC

INA1

V

ref

INA2

4

TEA0676T

5
6
7
8

MGE861

EQINA

Fig.2 Pin configuration.

TEA0676T

16

OUTB

15

EQSW

14

EQOUTB

13

EQINB

12

GND

11

INB1

10

HSW

9

INB2

FUNCTIONAL DESCRIPTION

Gain of pre-amplifier = 30 dB; minimum gain of
EQ-amplifier = 24.5 dB at f = 1 kHz with 70 µs cut-off
frequency.

Head switching is achieved when pin 10 (HSW) is
connected to ground via a 27 kΩ resistor (inputs INA2,

INB2 are active) or connected to HIGH level (0.8V

CC

)

(inputs INA1, INB1 are active).
Equalization time constant switching (70 µs/120 µs) is

achieved when pin 15 (EQSW) is connected to ground via
an 18 kΩ resistor (120 µs) or left open-circuit (70 µs).

1997 Oct 07 4

Philips Semiconductors Product specification

Dual pre-amplifier and equalizer for

TEA0676T

reverse tape decks

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CC

∆V

(12-x)

T

stg

T

amb

V

es

Notes

1. Human body model: C = 100 pF; R = 1.5 kΩ.

2. Machine model: C = 200 pF; R = 0 Ω.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-a

supply voltage 0 14 V
voltage at pins 1 to 11, 13 to 16 with respect to pin 12 0 V

CC

V
storage temperature −55 +150 °C
operating ambient temperature −40 +85 °C
electrostatic handling voltage note 1 −2000 +2000 V

note 2 −500 +500 V

thermal resistance from junction to ambient in free air 70 K/W

1997 Oct 07 5

Philips Semiconductors Product specification

Dual pre-amplifier and equalizer for

TEA0676T

reverse tape decks

CHARACTERISTICS

V

= 10 V; RL=10kΩ; CL= 2.5 nF; T

CC

387.5 mV with 0 dB as standard; EQ switch in 70 µs position; unless otherwise specified; see notes 1 and 2.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply

V

CC

I

CC

supply voltage (pin 5) 7.6 10.0 12.0 V
supply current − 10 13 mA

THD total harmonic distortion f = 1 kHz; V

H

R

headroom at output VCC= 7.6 V; THD = 1%;

PSRR power supply ripple

rejection

α

cs

α

m

α

ct

channel separation selective measurement;

channel matching selective measurement;

crosstalk between active
and inactive input

SN+

-------------­N

V

no(rms)

signal plus noise-to-noise
ratio (RMS value)

equivalent input noise
voltage (RMS value)

G

v

voltage gain of
pre-amplifier

A

v

R

EQ

Z

I

open-loop amplification pin INA1 to pin OUTA and

equalization resistor 4.7 5.8 6.9 kΩ
input impedance

pre-amplifier

Z

O

output impedance
EQ-amplifier

R

L

C

L

V

offset(DC)

I

O(GND)

I

O(VCC)

output load resistance 10 −− kΩ
output load capacitance 0 − 10 nF
input offset voltage pins INA1, INA2, INB1 and

DC current capability output to ground −2 −− mA
DC current capability output to V

EMC DC offset voltage at

pins 1 and 16

=25°C; Vo= 0 dB means 387.5 mV at output; all levels are referenced to

amb

=0dB − 0.08 0.15 %

o

f = 10 kHz; V

=6dB − 0.15 0.3 %

o

12 −− dB

f=1kHz
V

< 0.25 V; f = 1 kHz − 50 − dB

R(rms)

57 63 − dB

f = 1 kHz; Vo=10dB

−0.5 − +0.5 dB

f = 1 kHz; Vo=0dB
selective measurement;

70 77 − dB

f = 1 kHz; Vo=10dB
unweighted;

f = 20 Hz to 20 kHz; R

=0Ω;

s

67 73 − dB

internal gain 40 dB; linear;
see Fig.13

unweighted;

− 0.8 −µV

f = 20 Hz to 20 kHz; Rs=0Ω
from pin INA1 or INA2 to

29 30 31 dB
pin EQINA and from pin INB1
or INB2 to pin EQINB

pin INB1 to pin OUTB

f = 10 kHz 80 86 − dB
f = 400 Hz 104 110 − dB

60 100 − kΩ

− 80 100 Ω

− 2 − mV

INB2 connected to V

CC

f = 900 MHz; V

ref

= 6 V (RMS);

i

300 −− µA

− 50 − mV

see Figs 12, 14 and 15

1997 Oct 07 6