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TDA8580J
Datasheet
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Philips TDA8580J Datasheet

INTEGRATED CIRCUITS
DATA SH EET
TDA8580J
Multi-purpose power amplifier
Preliminary specification Supersedes data of 1998 Feb 25 File under Integrated Circuits, IC01
2000 Apr 18
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580J
FEATURES General
• Supply voltage range from 8 to 24 V
• Low distortion
• Few external components, fixed gain
• High output power
• Can be used as a stereo amplifier in Bridge-Tied Load
(BTL) or quad Single-Ended (SE) amplifiers
• Single-ended mode without loudspeaker capacitor
• Mute and standby mode with one- or two-pin operation
• Diagnostic information for Dynamic Distortion Detector (DDD), high temperature (145 °C) and short-circuit
• No switchon/off plops when switching between standby
and mute or mute and on; an external RC-network is prescribed to ensure plop-free operation
• Low offset variation at outputs between mute and on
• Fast mute on supply voltage drops.
ORDERING INFORMATION
Protection
• Short-circuitproofto ground, positivesupplyvoltageand across load; the supply voltage ranges where the different short circuit conditions are guaranteed are given in Chapter “Limiting values”
• ESD protected on all pins
• Thermal protection against temperatures exceeding 150 °C.
GENERAL DESCRIPTION
The TDA8580J is a stereo Bridge-Tied Load (BTL) or a quad Single-Ended (SE) amplifier that operates over a wide supply voltage range from 8 to 24 V. This makes it suitable for applications such as television, home-sound systems and active speakers.
Because of an internal voltage buffer, this device can be used withouta capacitor connected in series with the load (SE application). A combined BTL and 2 × SE application can also be configured (one chip stereo and subwoofer application).
TYPE
NUMBER
TDA8580J DBS17P plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SOT243-1
NAME DESCRIPTION VERSION
PACKAGE
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580J
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
P
I
q(tot)
I
stb
Bridge-tied load application
G
v
P
o
THD total harmonic distortion f
V
offset(DC)
V
no
SVRR supply voltage ripple rejection f
Single-ended application
G
v
P
o
V
offset(DC)
V
no
SVRR supply voltage ripple rejection f
operating supply voltage 8.0 14.4 24 V total quiescent current VP= 14.4 V − 140 170 mA standby supply current VP= 14.4 V − 150µA
voltage gain 31 32 33 dB output power THD = 0.5%; VP= 14.4 V; RL=4Ω 14 15 − W
THD = 0.5%; V
= 1 kHz; Po= 1 W; VP= 14.4 V;
i
= 24 V; RL=8Ω 21 23 − W
P
− 0.05 0.1 %
RL=4Ω f
= 1 kHz; Po= 10 W; VP=24V;
i
− 0.02 0.05 %
RL=8Ω
DC output offset voltage VP= 14.4 V; mute condition; RL=4Ω− 10 20 mV
V
= 14.4 V; on condition − 0 140 mV
P
noise output voltage Rs=1kΩ; VP= 14.4 V − 100 150 µV
= 1 kHz; V
i
ripple(p-p)
= 2 V; on or mute
50 60 − dB
condition; Rs=0Ω
voltage gain 25 26 27 dB output power THD = 0.5%; VP= 14.4 V; RL=4Ω 3.8 4.0 − W
THD = 0.5%; V
= 24 V; RL=4Ω 10.5 11.5 − W
P
DC output offset voltage VP= 14.4 V; mute condition; RL=4Ω− 10 20 mV
= 14.4 V; on condition − 0 100 mV
V
P
noise output voltage Rs=1kΩ; VP= 14.4 V − 80 120 µV
= 1 kHz; V
i
ripple(p-p)
= 2 V; on or mute
40 45 − dB
condition; Rs=0Ω
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580J
BLOCK DIAGRAM
V
P1VP2
handbook, full pagewidth
IN1
7
60 kΩ
TDA8580J
3
15
−
V/I
+
45 kΩ
−
OA
+
1
OUT1+
IN2
IN3
IN5
IN4
MUTE
STANDBY
8
+
60
V/I
kΩ
−
V
px
30 kΩ
BUFFER
60
10
12
11
13 5
INTERFACE
kΩ
60 kΩ
V
px
45
kΩ
45
kΩ
−
V/I
+
+
V/I
−
216
PGND1 PGND2
+
OA
−
45 kΩ
BUFFER
45 kΩ
−
OA
+
+
OA
−
45 kΩ
DIAGNOSTIC
4
9
14
17
6
MGE010
OUT2−
BUFFER
OUT3−
OUT4+
DIAG
Fig.1 Block diagram.
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580J
PINNING
SYMBOL PIN DESCRIPTION
OUT1+ 1 non-inverting output 1 PGND1 2 power ground 1 V
P1
3 supply voltage 1 OUT2− 4 inverting output 2 STANDBY 5 standby/mute/on selection input DIAG 6 diagnostic output IN1 7 input 1 IN2 8 input 2 BUFFER 9 single-ended buffer output IN3 10 input 3 IN4 11 input 4 IN5 12 input 5; signal ground capacitor
connection MUTE 13 mute/on selection input OUT3− 14 inverting output 3 V
P2
15 supply voltage 2 PGND2 16 power ground 2 OUT4+ 17 non-inverting output 4
handbook, halfpage
STANDBY
OUT1+
PGND1
V
P1
OUT2−
DIAG
IN1 IN2
BUFFER
IN3 IN4 IN5
MUTE
OUT3−
V
P2
PGND2
OUT4+
1 2 3 4 5 6 7 8 9
TDA8580J
10 11 12 13 14 15 16 17
MGE009
Fig.2 Pin configuration.
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580J
FUNCTIONAL DESCRIPTION
TheTDA8580J is amulti-purposepoweramplifier with four amplifiers which can be connected in the following configurationswith high outputpowerandlow distortion (at minimum quiescent current):
• Dual bridge-tied load amplifiers
• Quad single-ended amplifiers
• Dual single-ended amplifiers and one bridge-tied load
amplifier.
The amplifier can be switched in on, mute and off (standby)by the MUTEandSTANDBYpins (for interfacing directly with a microcontroller). One-pin operation is also possible by applying a voltage greater than 8 V to the STANDBY pin to switch the amplifier in on mode.
Special attention is given to the dynamic behaviour as follows:
• Slow offset change between mute and on(controlled by
• Low noise levels, which are independent of the supply
voltage.
Protections are includedto avoidthe IC beingdamaged at:
• Over temperature: Tj> 150 °C
• Short-circuit of the output pin(s) to ground or supply rail;
when short-circuited, the power dissipation is limited
• ESD protection (Human Body Model 3000 V, Machine Model 300 V)
• Energy handling. A DC voltage of 6 V can be connected to the output of any amplifier while the supply pins are short-circuited to ground.
Diagnostics are available for the following conditions (see Figs 3, 4 and 5):
• Chip temperature above 145 °C
• Distortion over 2% due to clipping
• Short-circuit protection active.
MUTE and STANDBY pins)
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
P
supply voltage operating − 24 V
no signal condition − 28 V
V
DIAG
I
OSM
I
ORM
V
P(scol)
V
P(scg)
voltage on pin DIAG − 18 V non-repetitive peak output current − 6A repetitive peak output current − 4.5 A supply voltage with short-circuit across load − 28 V supply voltage with short-circuit from output
− 26 V
to ground
V
P(scs)
supply voltage with short-circuit from output
− 16 V
to supply
V
P(rp)
P
tot
T
j
T
stg
T
amb
reverse polarity − 6V total power dissipation − 75 W junction temperature − 150 °C storage temperature −55 +150 °C ambient temperature −40 +85 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R R
th(j-a) th(j-c)
thermal resistance from junction to ambient in free air 40 K/W thermal resistance from junction to case 1.5 K/W
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580J
CHARACTERISTICS
VP= 14.4 V; T
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supplies
V
P
I
q(tot)
I
stb
V
O
V
P(mute)
V
I
Control pins
TANDBY PIN (see Table 1)
S V
5(stb)
V
hys(5)(stb)
V
5(mute)
V
5(on)
MUTE PIN (see Table 1) V
13(mute)
V
13(on)
Diagnostic; output buffer (open-collector); see Figs 3, 4 and 5 V
OL
I
LI
CD clip detector V T
j(diag)
Stereo BTL application; see Figs 6, 7, 10, 11, 14, 15, 18, 19, 21, 22, 23, 24, 26 and 28 THD total harmonic distortion f
P
o
G
v
=25°C; fi= 1 kHz; RL= ∞; measured in test circuit of Fig.28; unless otherwise specified.
amb
operating supply voltage 8.0 14.4 24 V total quiescent current − 140 170 mA standby current − 150µA DC output voltage − 7.0 − V low supply voltage mute 6.0 7.0 8.0 V DC input voltage − 4.0 − V
voltageat STANDBY pin forstandby
0 − 0.8 V
condition hysteresis voltage at STANDBY pin
note 1 − 0.2 − V
for standby condition voltage at STANDBY pin for mute
V13< 0.8 V 2.0 − 5.3 V
condition voltage at STANDBY pin for on
VP> 9 V; note 2 8.0 − 18 V
condition
voltage at MUTE pin for mute
V5=5V 0 − 0.8 V
condition voltage at MUTE pin for on condition V5=5V 2.5 − 5.3 V
LOW-level output voltage I leakage current V
junction temperature for high
=1mA − 0.2 0.8 V
sink
= 14.4 V −−1µA
DIAG
<0.8V 124%
DIAG
V
< 0.8 V − 145 −°C
DIAG
temperature warning
= 10 kHz; Po= 1 W; RL=4Ω;
i
− 0.2 0.3 %
filter: 22 Hz < f < 30 kHz
= 1 kHz; Po= 1 W; VP= 14.4 V;
f
i
− 0.05 0.1 %
RL=4Ω f
= 1 kHz; Po= 10 W; VP=24V;
i
− 0.02 0.05 %
RL=8Ω
output power THD = 0.5%; VP= 14.4 V; RL=4Ω 14 15 − W
voltage gain V
THD = 0.5%; V THD = 10%; V THD = 10%; V
= 3 V 31 32 33 dB
o(rms)
= 24 V; RL=8Ω 21 23 − W
P
= 14.4 V; RL=4Ω 18 20 − W
P
= 24 V; RL=8Ω 28 30 − W
P
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580J
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
α
cs
∆G
v
V
offset(DC)
V
no
V
no(mute)
V
o(mute)
SVRR supply voltage ripple rejection R
Z
i
CMRR common mode rejection ratio R Quad SE application; see Figs 8, 9, 12, 13, 16, 17, 20, 25, 27 and 29 THD total harmonic distortion f
P
o
G
v
α
cs
∆G
v
V
offset(DC)
V
no
V
no(mute)
V
o(mute)
SVRR supply voltage ripple rejection f
Z
i
CMRR common mode rejection ratio V
Notes
1. Hysteresis between the rise and fall voltage when pin STANDBY is controlled with low ohmic voltage source.
2. At lower VP the voltage at the STANDBY pin for on condition will be adjusted automatically to maintain an on condition at low battery voltage (down to 8 V) when using one-pin operation.
3. The noise output is measured in a bandwidth of 20 Hz to 20 kHz.
channel separation Po= 2 W; fi= 1 kHz; RL=4Ω 60 65 − dB
channel unbalance −−1dB
DC output offset voltage on condition − 0 140 mV
mute condition; R
=4Ω−10 20 mV
L
noise output voltage Rs=1kΩ; VP= 14.4 V; note 3 − 100 150 µV noise output voltage mute note 3 − 020µV output voltage mute V
=1V − 3 500 µV
i(rms)
=0Ω; fi= 1 kHz;
s
V
ripple(p-p)
= 2 V; on or mute
50 60 − dB
condition
input impedance 23 30 37 kΩ
=0Ω; V
s
= 1 kHz; Po= 1 W; RL=4Ω−0.05 0.1 %
i
= 10 kHz; Po= 1 W; RL=4Ω;
f
i
= 0.5 V; fi= 1 kHz − 60 − dB
i(rms)
− 0.2 0.3 %
filter: 22 Hz < f < 30 kHz f
= 1 kHz; Po= 1 W; VP=24V,
i
− 0.05 0.1 %
RL=4Ω; filter: 22 Hz<f<30kHz
output power THD = 0.5%; VP= 14.4 V; RL=4Ω 3.8 4.0 − W
voltage gain V
THD = 0.5%; V THD = 10%; V THD = 10%; V
= 3 V 25 26 27 dB
o(rms)
= 24 V; RL=4Ω 10.5 11.5 − W
P
= 14.4 V; RL=4Ω 4.9 5.2 − W
P
= 24 V; RL=4Ω 14 15 − W
P
channel separation Po= 2 W; fi= 1 kHz; RL=4Ω 40 46 − dB
channel unbalance −−1dB
DC output offset voltage VP= 14.4 V; on condition − 0 100 mV
V
= 14.4 V; mute condition;
P
− 10 20 mV
RL=4Ω noise output voltage Rs=1kΩ; VP= 14.4 V; note 3 − 80 120 µV noise output voltage mute note 3 − 020µV output voltage mute V
=1V − 3 500 µV
i(rms)
= 1 kHz; V
i
ripple(p-p)
= 2 V, on or
40 45 − dB
mute condition; Rs=0Ω input impedance 46 60 74 kΩ
= 0.5 V; fi= 1 kHz; Rs=0Ω− 60 − dB
i(rms)
Philips Semiconductors Preliminary specification
Multi-purpose power amplifier TDA8580J
Table 1 Selection of standby, mute and on
VOLTAGE AT PIN STANDBY VOLTAGE AT PIN MUTE FUNCTION
< 0.8 V don’t care standby (off) 2 to 5.3 V < 0.8 V mute (DC settled) 2 to 5.3 V 2.5 to 5.3 V on (AC operating) ≥ 8.0 V don’t care on (AC operating)
handbook, halfpage
DIAG
amplifier
output
temperature
overload
MGE020
Fig.3 Diagnostic waveform: temperature overload.
handbook, halfpage
normal
DIAG
amplifier
output
active
DDD
Fig.4 Diagnostic waveform: DDD function.
normal
MGE021
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