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TDA8512J
Datasheet
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Philips TDA8512J Datasheet

INTEGRATED CIRCUITS
DATA SH EET
TDA8512J
26 W BTL and 2 × 13 W SE or 4 × 13 W SE power amplifier
Preliminary specification File under Integrated Circuits, IC01
2001 Nov 16
Philips Semiconductors Preliminary specification
26 W BTL and 2 × 13 W SE or 4 × 13 W SE power amplifier
CONTENTS
1 FEATURES 2 APPLICATIONS 3 GENERAL DESCRIPTION 4 QUICK REFERENCE DATA 5 ORDERING INFORMATION 6 BLOCK DIAGRAM 7 PINNING 8 FUNCTIONAL DESCRIPTION
8.1 Mode select switch
8.2 Mode select
8.3 Built-in protection circuits
8.4 Short-circuit protection 9 LIMITING VALUES 10 HANDLING 11 THERMAL CHARACTERISTICS 12 DC CHARACTERISTICS 13 AC CHARACTERISTICS 14 APPLICATION INFORMATION
14.1 Input configuration
14.2 Output power
14.3 Power dissipation
14.4 Supply Voltage Ripple Rejection (SVRR)
14.5 Switch-on and switch-off
14.6 PCB layout and grounding
14.7 Typical performance characteristics
TDA8512J
15 PACKAGE OUTLINE 16 SOLDERING
16.1 Introduction to soldering through-hole mount packages
16.2 Soldering by dipping or by solder wave
16.3 Manual soldering
16.4 Suitability of through-hole mount IC packages for dipping and wave soldering methods
17 DATA SHEET STATUS 18 DEFINITIONS 19 DISCLAIMERS
Philips Semiconductors Preliminary specification
26 W BTL and 2 × 13 W SE or 4 × 13 W SE power amplifier

1 FEATURES

• Requires very few external components
• High output power
• Low output offset voltage Bridge-Tied Load (BTL)
channel
• Fixed gain
• Good ripple rejection
• Mode select switch: operating, mute and standby
• Short-circuit safe to ground and across load
• Low power dissipation in any short-circuit condition
• Thermally protected
• Reverse polarity safe
• Electrostatic discharge protection
• No switch-on and switch-off plops

4 QUICK REFERENCE DATA

TDA8512J
• Flexible leads
• Low thermal resistance
• Identical inputs: inverting and non-inverting.

2 APPLICATIONS

• Multimedia systems
• Active speaker systems (stereo with sub woofer or
QUAD).

3 GENERAL DESCRIPTION

The TDA8512Jis an integrated class-B output amplifier in a 17-lead Single-In-Line (SIL) power package. It contains 4 × 13 WSingleEnded(SE)amplifiersofwhichtwo can be used to configure a 26 W BTL amplifier.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
General
V
P
I
ORM
I
q(tot)
I
stb
supply voltage 6 15 18 V repetitive peak output current −−4A total quiescent current − 80 mA standby current − 0.1 100.0 µA
BTL channel
P
o
output power RL=4Ω; THD = 10% − 26 − W SVRR supply voltage ripple rejection 46 −−dB V
n(o)
Z
input impedance 25 −−kΩ
i
∆V
DC output offset voltage −−150 mV
OO
noise output voltage Rs=0Ω−70 −µV
SE channels
P
o
output power THD = 10%
=4Ω−7.0 − W
R
L
R
=2Ω−13.0 − W
L
SVRR supply voltage ripple rejection 46 −−dB V
n(o)
input impedance 50 −−kΩ
Z
i
noise output voltage Rs=0Ω−50 −µV

5 ORDERING INFORMATION

TYPE
NUMBER
NAME DESCRIPTION VERSION
PACKAGE
TDA8512J DBS17P plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SOT243-1
Philips Semiconductors Preliminary specification
26 W BTL and 2 × 13 W SE or 4 × 13 W SE power amplifier

6 BLOCK DIAGRAM

handbook, full pagewidth
1
INV1
3
INV2
4
RR
16
INV3
15
INV3
17
INV4
9
REF
SGND GND1 GND2
60
kΩ
2
kΩ
60
kΩ
2
kΩ
60
kΩ
2
kΩ
60
kΩ
2
kΩ
input reference voltage
2711
standby
x1
18 kΩ
18 kΩ
switch
VA
18 kΩ
18 kΩ
15 kΩ
15 kΩ
mute switch
VA
mute switch
VA
V
P
mute switch
VA
mute switch
VA
V
P1
513
C
m
C
m
PROTECTIONS
thermal
short-circuit
mute reference voltage
C
m
C
m
V
P2
power stage
power stage
TDA8512J
standby reference voltage
power stage
power stage
mute switch
14
10
12
MGW426
TDA8512J
6
OUT1
8
OUT2
MODE
OUT3
OUT4
Fig.1 Block diagram.
Philips Semiconductors Preliminary specification
26 W BTL and 2 × 13 W SE or 4 × 13 W SE power amplifier

7 PINNING

SYMBOL PIN DESCRIPTION
INV1 1 non-inverting input 1 SGND 2 signal ground INV2 3 non-inverting input 2 RR 4 supply voltage ripple rejection V
P1
OUT1 6 output 1 GND1 7 power ground 1 OUT2 8 output 2 REF 9 reference voltage input OUT3 10 output3 GND2 11 power ground 2 OUT4 12 output4 V
P2
MODE 14 mode select switch input INV3 15 inverting input 3 INV3 16 non-inverting input 3 INV4 17 non-inverting input 4
5 supply voltage 1
13 supply voltage 2
INV1
SGND
INV2
RR
V
P1
OUT1
GND1
OUT2
REF
OUT3
GND2
OUT4
V
P2
MODE
INV3
INV3 INV4
1 2 3 4 5 6 7 8
9 10 11 12 13 14 15 16 17
TDA8512J
TDA8512J
MGW427
Fig.2 Pin configuration.
Philips Semiconductors Preliminary specification
26 W BTL and 2 × 13 W SE or 4 × 13 W SE power amplifier

8 FUNCTIONAL DESCRIPTION

The TDA8512J contains four identical amplifiers and can be used in the configurations:
• Two SE channels (fixed gain 20 dB) and one BTL channel (fixed gain 26 dB)
• Four SE channels.
(RL depends on the application).
8.1 Mode select switch
A special feature of the TDA8512J device is the mode select switch (pin MODE), offering:
• Low standby current (<100 µA)
• Low switching current (low cost supply switch)
• Mute facility.
Toavoidswitch-onplops,itisadvisedto keep the amplifier in the mute mode for longer than 100 ms to allow charging of the input capacitors at pins INV1, INV2, INV3, INV3 and INV4. This can be achieved by:
• Control via a microcontroller
• An external timing circuit (see Fig.3).
The circuit slowly ramps up the voltage at the pin MODE when switching on, and results in fast muting when switching off.
V
handbook, halfpage
P
10 kΩ 100 Ω
mode
select
47 µF
switch
100 kΩ
MGA708
Fig.3 Mode select switch circuitry.
TDA8512J
8.2 Mode select
For the 3 functional modes; standby, mute and operate, the pin MODE can be driven by a 3-state logic output stage:e.g. microcontroller with someextracomponents for DC level shifting. (see Fig.10).
Standby mode will be activated by a applying a low DC level between 0 and 2 V. The power consumption of the device will be reduced to less than 1.5 mW. The input and output pins are floating: high impedance condition.
Mute mode will be activated by a applying a DC level between 3.3 and 6.4 V. The outputs of the amplifier will be muted (no audio output); however, the amplifier is DC biased and the DC level of the input and output pins stays on half the supply voltage.
Operating mode is obtained at a DC level between 8.5 V and VP.
8.3 Built-in protection circuits
The device contains both a thermal protection, and a short-circuit protection.
Thermal protection: The junction temperature is measured by a temperature
sensor; at a junction temperature of about 160 °C this detection circuit switches off the power stages.
Short-circuit protection (outputs to ground, supply and across the load):
Short-circuit is detected by a so called Maximum Current Detection circuit, which measures the current in the positive, respectively negative supply line of each power stage. At currents exceeding (typical) 6 A, the power stages are switched off during some ms.
8.4 Short-circuit protection
When a short-circuit during operation to either GND or acrosstheloadofoneor more channels occurs, the output stages are switched off for approximately 20 ms. After that time, it is checked during approximately 50 µs to see whether the short-circuit is still present. Due to this duty factor of 50 µs per 20 ms, the average supply current is very low during this short-circuit (approximately 40 mA, see Fig.4).
Philips Semiconductors Preliminary specification
26 W BTL and 2 × 13 W SE or 4 × 13 W SE power amplifier
handbook, full pagewidth
I(A)
current
in
output
stage
short-circuit
20 ms
50 µs
Fig.4 Short-circuit wave form.
TDA8512J
MGW430
t (s)

9 LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
P
supply voltage operating − 18 V
no signal − 21 V
I
OSM
I
ORM
V
sc
V
rp
P
tot
T
stg
T
amb
T
vj
non-repetitive peak output current − 6A repetitive peak output current − 4A short-circuit safe voltage operating; note 1 − 18 V reverse polarity voltage − 6V total power dissipation − 60 W storage temperature −55 +150 °C ambient temperature −40 +85 °C virtual junction temperature − 150 °C
Note
1. To ground and across load.

10 HANDLING

ESD protection of this device complies with the Philips’ General Quality Specification (GQS).
Philips Semiconductors Preliminary specification
26 W BTL and 2 × 13 W SE or
TDA8512J
4 × 13 W SE power amplifier

11 THERMAL CHARACTERISTICS

In accordance with IEC 60747-1.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
R
th(j-c)
The measured thermal resistance of the IC-package (R maximum ambient temperature of 60 °C and VP= 15 V, the following calculation for the heatsink can be made:
For the application two SE outputs with 2 Ω load, the measured worst-case sine-wave dissipation is 2 × 7W For the application BTL output with 4 Ω load, the worst-case sine-wave dissipation is 12.5 W.
So the total power dissipation is P
At T
j(max)
So P R
th(hs)=Rth(tot)
The above calculation is for application at worst-case (stereo) sine-wave output signals. In practice, music signals will be applied. In that case the maximum power dissipation will be about the half the sine-wave power dissipation, which allows the use of a smaller heatsink.
thermal resistance from junction to ambient in free air 40.0 K/W thermal resistance from junction to case see Fig.5 1.3 K/W
) is maximum 1.3 K/W if all four channels are driven. For a
th(j-c)
=2×7 + 12.5 W = 26.5 W.
d(tot)
= 150 °C the temperature increase, caused by the power dissipation, is: ∆T = 150 °C − 60 °C=90°C.
d(tot)
× R
= ∆T = 90 K. As a result: which means:
th(tot)
− R
= 3.4 − 1.3 = 2.1 K/W.
th(j-c)
R
th tot()
90
-----------
26.5
3.4 K/W==
d(tot)
× R
So P R
th(hs)=Rth(tot)
= ∆T = 90 K. As a result: which means:
th(tot)
− R
= 6.8 − 1.3 = 5.5 K/W.
th(j-c)
handbook, halfpage
3.0 K/W
R
th tot()
output 1 output 2
0.7 K/W
-------------- -
13.25
virtual junction
3.0 K/W
0.2 K/W
90
case
6.8 K/W==
output 3 output 4
3.0 K/W
0.7 K/W
MEA860 - 2
Fig.5 Equivalent thermal resistance network.
3.0 K/W
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