Product specification
File under Integrated Circuits, IC11
1998 Oct 27
Philips SemiconductorsProduct specification
Brushless DC motor drive circuitTDA5145TS
FEATURES
• Full-wave commutation (using push-pull drivers at the
output stages) without position sensors
• Built-in start-up circuitry
• Three push-pull outputs:
APPLICATIONS
• General purpose spindle driver e.g.:
– Hard disk drive
– Tape drive
– Optical disk drive.
– Output current 2.0 A (typ.)
– Built-in current limiter
– Soft-switching outputs for low Electromagnetic
Interference (EMI).
• Thermal protection
• Flyback diodes
• Motor brake facility
• Direction control input
GENERAL DESCRIPTION
The TDA5145TS is a bipolar integrated circuit used to
drive 3-phase brushless DC motors in full-wave mode.
The device is sensorless (saving of 3 hall-sensors) using
the back EMF sensing technique to sense the rotor
position. It includes bidirectional control, brake function
and has a special circuit built-in to reduce the EMI
(soft-switching output stages).
• Reset function.
QUICK REFERENCE DATA
Measured over full voltage and temperature range.
SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT
V
P
V
i(VMOT)
supply voltagenote 14−18V
input voltage to the output driver
note 21.7−16V
stages
V
I
DO
LIM
drop-out output voltageIo= 100 mA−0.901.05V
current limitingV
=10V; Ro= 1.2 Ω1.82.02.5A
VMOT
Notes
1. An unstabilized supply can be used.
2. V
VMOT=VP
; all outputs Io= 0 mA.
ORDERING INFORMATION
TYPE
NUMBER
NAMEDESCRIPTIONVERSION
PACKAGE
TDA5145TSSSOP24plastic shrink small outline package; 24 leads;
body width 5.3 mm
SOT340-1
1998 Oct 272
Philips SemiconductorsProduct specification
Brushless DC motor drive circuitTDA5145TS
BLOCK DIAGRAM
handbook, full pagewidth
CAP-ST
CAP-DC
CAP-CD
TEST
CAP-TI
DIR
14
13
12
3
15
9
THERMAL
PROTECTION
START-UP
OSCILLATOR
ADAPTIVE
COMMUTATION
DELAY
TIMING
DIRECTION
CONTROL
BRAKE
BRAKE
COMMUTATION
RESET
818
RESET
LOGIC
VMOT
6, 7
PUSH/PULL
FLYBACK
D
H
D
OUTPUT DRIVER
OUTPUT DRIVER
L
STAGE 2
STAGE 3
OUTPUT
DRIVER
STAGE 1
1, 2
4, 5
20,
21
MOT1
MOT2
MOT3
TDA5145TS
1011
GND2
GND1V
Fig.1 Block diagram.
1998 Oct 273
23, 24
22
MOT0
EMF COMPARATORS
MGR391
P
Philips SemiconductorsProduct specification
Brushless DC motor drive circuitTDA5145TS
PINNING
SYMBOLPINDESCRIPTION
MOT11driver output 1
MOT12driver output 1
TEST3test input/output
MOT24driver output 2
MOT25driver output 2
VMOT6input voltage for the output driver
stages
VMOT7input voltage for the output driver
stages
BRAKE8brake input; this pin may not be left
floating, a LOW-level voltage must
be applied to disable this function
DIR9direction control input; this pin may
not be left floating
GND210ground supply return for control
circuits
V
P
11supply voltage
CAP-CD12external capacitor connection for
adaptive communication delay
timing
CAP-DC13external capacitor connection for
adaptive communication delay
timing copy
CAP-ST14external capacitor connection for
start-up oscillator
CAP-TI15external capacitor connection for
timing
n.c.16not connected
n.c.17not connected
RESET18reset input; this pin may not be left
floating, a LOW-level voltage must
be applied to disable this function
n.c.19not connected
MOT320driver output 3
MOT321driver output 3
MOT022input from the star point of the motor
coils
GND123ground (0 V) motor supply return for
output stages
GND124ground (0 V) motor supply return for
The TDA5145TS offers a sensorless 3-phase motor drive
function. It is unique in its combination of sensorless motor
drive and full-wave drive. The TDA5145TS offers
protected outputs capable of handling high currents and
can be used with star or delta connected motors. It can
easily be adapted for different motors and applications.
The TDA5145TS offers the following features:
• Sensorless commutation by using the motor EMF
• Built-in start-up circuit
• Optimum commutation, independent of motor type or
motor loading
• Built-in flyback diodes
• Three phase full-wave drive
• High output current (2.0 A)
• Outputs protected by current limiting and thermal
protection of each output transistor
• Low current consumption by adaptive base-drive
• Soft-switching pulse output for low radiation
• Direction of rotation controlled by one pin
• Brake function.
1998 Oct 274
Philips SemiconductorsProduct specification
Brushless DC motor drive circuitTDA5145TS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT
V
P
V
I(n)
V
I(VMOT)
V
O
V
I(n1)
T
stg
T
amb
P
tot
V
es
supply voltage−18V
input voltage; all pins except
VI<18V−0.3VP+ 0.5V
VMOT
VMOT input voltage−0.5+17V
output voltage MOT0, MOT1,
−1V
VMOT+VdFD
V
MOT2 and MOT3
input voltage CAP-ST, CAP-TI,
−2.5V
CAP-CD and CAP-DC
storage temperature−55+150°C
operating ambient temperature0+70°C
total power dissipationsee Fig. 3−−W
electrostatic handlingsee Chapter “Handling”−2000V
HANDLING
Every pin withstands the ESD test according to
“MIL-STD-883C class 2”
positive and 3 pulses negative on each pin referenced to ground.
1.00
0.57
P
(W)
2
tot
1
0
−50
0200
50100150
70
handbook, halfpage
. Method 3015 (HBM 1500 Ω; 100 pF) 3 pulses
MGL529
T
(°C)
amb
Fig.3 Power derating curve.
1998 Oct 275
Philips SemiconductorsProduct specification
Brushless DC motor drive circuitTDA5145TS
CHARACTERISTICS
V
= 14.5 V; T
P
SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT
Supply
V
P
I
P
V
i(VMOT)
Thermal protection
T
SD
∆Treduction in temperature before
MOT0; centre tap
V
i
I
bias
V
CSW
∆V
CSW
V
hys
MOT1, MOT2 and MOT3; see Fig.4
V
DO
∆V
sat(lt)
∆V
sat(ut)
I
LIM
t
r
t
f
V
dF(DH)
V
dF(DL)
I
dM
DIR
V
IH
V
IL
I
IL
I
IH
=25°C; unless otherwise specified.
amb
supply voltagenote 14−18V
supply currentnote 2−6.87.8mA
input voltage to the output driver
see Fig.11.7−16V
stages
local temperature at temperature
130140150°C
sensor causing shut-down
after shut-down−T
− 30 −K
SD
switch-on
input voltage−0.5−V
input bias current0.5 V < Vi<V
− 1.5 V −10−−µA
VMOT
VMOT
V
comparator switching levelnote 3±20±25±30mV
variation in comparator switching
−− 3mV
levels
comparator input hysteresis−75−µV
drop-out output voltageIo= 100 mA−0.91.05V
I
= 1000 mA−1.61.85V
o
variation in saturation voltage
Io= 100 mA−− 180mV
between lower transistors
variation in saturation voltage
Io= −100 mA−− 180mV
between upper transistors
current limitingV
rise time switching outputV
fall time switching outputV
diode forward voltage (diode DH)Io=−500 mA;