DATA SH EET
Product specification
File under Integrated Circuits, IC01
November 1982
INTEGRATED CIRCUITS
TDA1015
1 to 4 W audio power amplifier
November 1982 2
Philips Semiconductors Product specification
1 to 4 W audio power amplifier TDA1015
The TDA1015 is a monolithic integrated audio amplifier circuit in a 9-lead single in-line (SIL) plastic package. The device
is especially designed for portable radio and recorder applications and delivers up to 4 W in a 4 Ω load impedance. The
very low applicable supply voltage of 3,6 V permits 6 V applications.
Special features are:
• single in-line (SIL) construction for easy mounting
• separated preamplifier and power amplifier
• high output power
• thermal protection
• high input impedance
• low current drain
• limited noise behaviour at radio frequencies
QUICK REFERENCE DATA
PACKAGE OUTLINE
9-lead SIL; plastic (SOT110B); SOT110-1; 1996 August 13.
Supply voltage range V
P
3,6 to 18 V
Peak output current I
OM
max. 2,5 A
Output power at d
tot
= 10%
V
P
= 12 V; RL = 4 Ω P
o
typ. 4,2 W
V
P
= 9 V; RL = 4 Ω P
o
typ. 2,3 W
V
P
= 6 V; RL = 4 Ω P
o
typ. 1,0 W
Total harmonic distortion at P
o
= 1 W; RL = 4 Ω d
tot
typ. 0,3 %
Input impedance
preamplifier (pin 8) |Zi| > 100 kΩ
power amplifier (pin 6) |Z
i
| typ. 20 kΩ
Total quiescent current I
tot
typ. 14 mA
Operating ambient temperature T
amb
−25 to + 150 °C
Storage temperature T
stg
−55 to + 150 °C
November 1982 3
Philips Semiconductors Product specification
1 to 4 W audio power amplifier TDA1015
Fig.1 Circuit diagram.
November 1982 4
Philips Semiconductors Product specification
1 to 4 W audio power amplifier TDA1015
RATINGS
Limiting values in accordance with Absolute Maximum System (IEC 134)
HEATSINK DESIGN
Assume V
P
= 12 V; RL = 4 Ω; T
amb
= 45 °C maximum.
The maximum sine-wave dissipation is 1,8 W.
R
th j-a=Rth j-tab+Rth tab-h+Rth h-a
= = 58 K/W.
Where R
th j-a
of the package is 45 K/W, so no external heatsink is required.
Supply voltage V
P
max. 18 V
Peak output current I
OM
max. 2,5 A
Total power dissipation see derating curve Fig.2
Storage temperature T
stg
−55 to + 150 °C
Operating ambient temperature T
amb
−25 to + 150 °C
A.C. short-circuit duration of load
during sine-wave drive; VP = 12 V t
sc
max. 100 hours
Fig.2 Power derating curve.
150 45–
18,
----------------------