Philips PZ1418B15U, PZ1418B15UJ Datasheet

DATA SH EET

Product specification
Supersedes data of November 1994

1997 Feb 19

DISCRETE SEMICONDUCTORS

PZ1418B15U

NPN microwave power transistor

1997 Feb 19 2

Philips Semiconductors Product specification

NPN microwave power transistor PZ1418B15U

FEATURES

• Interdigitated structure provides high emitter efficiency

• Diffused emitter ballasting resistors providing excellent

current sharing and withstanding a high VSWR

• Gold metallization realizes very stable characteristics
and excellent lifetime

• Multicell geometry gives good balance of dissipated
power and low thermal resistance

• Internal input and output prematching ensures good
stability and easy broadband use.

APPLICATIONS

• Common base class-B wideband amplifiers under CW
conditions in military and professional applications, and
to drive the type PZ1418B30U.

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in
a SOT443A metal ceramic flange package with the base
connected to the flange.

PINNING - SOT443A

PIN DESCRIPTION

1 collector
2 emitter
3 base connected to flange

Fig.1 Simplified outline and symbol.

handbook, halfpage

MAM314

1

2

3

Top view

e

c

b

QUICK REFERENCE DATA

RF performance up to T

mb

=25°C in a common base class-B wideband amplifier.

MODE OF OPERATION

f

(GHz)

V

CC

(V)

P

L

(W)

G

p

(dB)

η

C

(%)

Zi; Z

L

(Ω)

Class-B 1.4 to 1.8 28 ≥12.5 ≥7 ≥38 see Figs 6

and 7

WARNING

Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1997 Feb 19 3

Philips Semiconductors Product specification

NPN microwave power transistor PZ1418B15U

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

collector-base voltage open emitter − 40 V

V

CEO

collector-emitter voltage open base − 15 V

V

CES

collector-emitter voltage RBE=0Ω−35 V

V

EBO

emitter-base voltage open collector − 3V

I

C

collector current (DC) − 2A

P

tot

total power dissipation Tmb≤ 75 °C − 27 W

T

stg

storage temperature −65 +200 °C

T

j

operating junction temperature − 200 °C

T

sld

soldering temperature − 235 °C

Fig.2 Power derating curve.

handbook, halfpage

0

30

20

10

0

50 100 200150

MGD969

P

tot

(W)

Tmb (°C)

1997 Feb 19 4

Philips Semiconductors Product specification

NPN microwave power transistor PZ1418B15U

THERMAL CHARACTERISTICS

Note

1. See “

Mounting recommendations in the General part of handbook SC15”

.

CHARACTERISTICS

T

mb

=25°C unless otherwise specified.

APPLICATION INFORMATION

Microwave performance up to T

mb

=25°C in a common base class B wideband amplifier.

SYMBOL PARAMETER CONDITIONS MAX. UNIT

R

th j-mb

thermal resistance from junction to mounting-base Tj=75°C 4 K/W

R

th mb-h

thermal resistance from mounting-base to heatsink Tj=75°C; note 1 0.2 K/W

SYMBOL PARAMETER CONDITIONS MAX. UNIT

I

CBO

collector cut-off current VCB=40V; IE=0 5 mA

V

CB

=30V; IE= 0 2.5 mA

I

CES

collector cut-off current VCE=35V; RBE= 0 25 mA

I

EBO

emitter cut-off current VEB= 1.5 V; IC= 0 100 µA

MODE OF

OPERATION

f

(GHz)

V

CC

(V)

P

L

(W)

G

p

(dB)

η

C

(%)

Zi; Z

L

(Ω)

Class-B 1.4 to 1.8 28 ≥12.5

typ. 15

≥7

typ. 7.8

≥38

typ. 45

see Figs 6 and 7

Fig.3 Wideband test circuit board for 1.4 to 1.8 GHz operation.

Dimensions in mm.
Substrate: Epsilam printed circuit board.
Thickness: 0.635 mm.
Permittivity: εr= 10.

handbook, full pagewidth

100 pF

(ATC)

output
50 Ω

input
50 Ω

30

13.5

2 4.5

2

6

4.5

7.5

14.5

4.5
1

9

30

15

5

1

2.5

24

0.5

5

MSA110