Philips pz1418 DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
ndbook, halfpage
M3D034
PZ1418B30U
NPN microwave power transistor
Product specification
Supersedes data of 1997 Feb 19
1997 Nov 13
Philips Semiconductors Product specification
NPN microwave power transistor PZ1418B30U
FEATURES
• Interdigitated structure provides high emitter efficiency
• Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
• Gold metallization realizes very stable characteristics
and excellent lifetime
• Multicell geometry gives good balance of dissipated
power and low thermal resistance
• Internal input and output prematching ensures good
stability and easy broadband use.
APPLICATIONS
• Common base class-B broadband amplifiers under CW
conditions in military and professional applications.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT443A metal ceramic flange package with the base
connected to the flange.
PINNING - SOT443A
PIN DESCRIPTION
1 collector
2 emitter
3 base; connected to flange
handbook, halfpage
1
2
Top view
Fig.1 Simplified outline and symbol.
c
b
3
e
MAM314
QUICK REFERENCE DATA
RF performance up to T
f
(GHz)
=25°C in a common base class-B wideband amplifier.
mb
V
(V)
CC
P
(W)
L
G
p
(dB)
η
(%)
C
Zi; Z
L
(Ω)
1.4 to 1.8 28 ≥27 ≥7.3 ≥38 see Figs 6 and 7
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Nov 13 2
Philips Semiconductors Product specification
NPN microwave power transistor PZ1418B30U
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 15 V
collector-emitter voltage RBE=0 − 35 V
emitter-base voltage open collector − 3V
collector current (DC) − 4A
total power dissipation Tmb≤ 75 °C − 45 W
storage temperature −65 +200 °C
operating junction temperature − 200 °C
soldering temperature − 235 °C
50
handbook,
P
tot
(W)
40
30
20
10
0
0 50 100 200
150
Fig.2 Power derating curve as a function of
mounting base temperature.
MGD970
Tmb (°C)
1997 Nov 13 3
Philips Semiconductors Product specification
NPN microwave power transistor PZ1418B30U
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MAX. UNIT
R
th j-mb
R
th mb-h
Note
1. See “
CHARACTERISTICS
=25°C unless otherwise specified.
T
mb
SYMBOL PARAMETER CONDITIONS MAX. UNIT
I
CBO
I
CES
I
EBO
thermal resistance from junction to mounting-base Tj=75°C 2.2 K/W
thermal resistance from mounting-base to heatsink Tj=75°C; note 1 0.2 K/W
Mounting recommendations in the General part of handbook SC19a”
.
collector cut-off current VCB=40V; IE= 0 10 mA
V
=30V; IE=0 5 mA
CB
collector cut-off current VCE=35V; RBE= 0 50 mA
emitter cut-off current VEB= 1.5 V; IC= 0 200 µA
APPLICATION INFORMATION
Microwave performance up to T
f
(GHz)
V
(V)
CC
=25°C in a common base class B wideband amplifier.
mb
1.4 to 1.8 28 ≥27
handbook, full pagewidth
input
50 Ω
0.65
6.5
Dimensions in mm.
Substrate: Epsilam printed-circuitboard.
Thickness: 0.635 mm.
Permittivity: εr= 10.
(W)
typ. 35
4 5 5 2 5.5 22
P
L
12
21
G
p
(dB)
≥7.3
typ. 8.4
4
η
C
(%)
≥38
typ. 45
0.65
8.5
100 pF
(ATC)
Zi; Z
(Ω)
see Figs 6 and 7
output
50 Ω
MGK064
L
Fig.3 Wideband test circuit board for 1.4 to 1.8 GHz operation.
1997 Nov 13 4
Loading...