Philips PXTA92, PXTA93 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D109
PXTA92
PNP high-voltage transistor
Product specification
Supersedes data of 1997 Jun 20
1999 Apr 29
Philips Semiconductors Product specification
PNP high-voltage transistor PXTA92
FEATURES
• Low current (max. 100 mA)
PINNING
PIN DESCRIPTION
• High voltage (max. 300 V).
APPLICATIONS
• Telephony and professional communication equipment.
DESCRIPTION
handbook, halfpage
PNP high-voltage transistor in a SOT89 plastic package.
NPN complement: PXTA42.
MARKING
TYPE NUMBER MARKING CODE
PXTA92 p2D
PXTA93 p2E
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1 emitter
2 collector
3 base
2
3
1
123
Bottom view
MAM297
Fig.1 Simplified outline (SOT89) and symbol.
SYMBOL P ARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−300 V
collector-emitter voltage open base −−300 V
emitter-base voltage open collector −−5V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−100 mA
total power dissipation T
≤ 25 °C; note 1 − 1.3 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
2
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
.
1999 Apr 29 2
Philips Semiconductors Product specification
PNP high-voltage transistor PXTA92
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
f
T
thermal resistance from junction to ambient note 1 96 K/W
thermal resistance from junction to soldering point 16 K/W
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
collector cut-off current IE= 0; VCB= −200 V −−250 nA
emitter cut-off current IC= 0; VBE= −3V −−100 nA
DC current gain VCE= −10 V; note 1
I
= −1mA 25 −
C
=−10 mA 40 −
I
C
I
= −30 mA 25 −
C
collector-emitter saturation voltage IC= −20 mA; IB= −2mA −−500 mV
base-emitter saturation voltage IC= −20 mA; IB= −2mA −900 mV
collector capacitance IE=ie= 0; VCB= −20 V;
− 6pF
f = 1 MHz
transition frequency IC= −10 mA; VCE= −20 V;
50 − MHz
f = 100 MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 29 3
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