Philips PXTA64 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D109
PXTA64
PNP Darlington transistor
Product specification
Supersedes data of September 1994
1997 Apr 24
File under Discrete Semiconductors, SC04
Philips Semiconductors Product specification
PNP Darlington transistor PXTA64
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 30 V).
PINNING
PIN DESCRIPTION
1 emitter
2 collector
APPLICATIONS
3 base
• High input impedance preamplifiers.
DESCRIPTION
handbook, halfpage
32
PNP Darlington transistor in a SOT89 plastic package.
NPN complement: PXTA14.
MARKING
TYPE NUMBER MARKING CODE
123
Bottom view
TR1
TR2
1
MAM301
PXTA64 p2V
Fig.1 Simplified outline (SOT89) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
P
h
f
CBO
CES
C
tot
FE
T
collector-base voltage open emitter −−30 V
collector-emitter voltage VBE=0 −−30 V
collector current (DC) −−500 mA
total power dissipation T
≤ 25 °C − 1.3 W
amb
DC current gain IC= −10 mA; VCE= −5 V 10000 −
transition frequency IC= −100 mA; VCE= −5 V; f = 100 MHz 125 − MHz
1997 Apr 24 2
Philips Semiconductors Product specification
PNP Darlington transistor PXTA64
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CES
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
T
amb
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
For other mounting conditions, see
collector-base voltage open emitter −−30 V
collector-emitter voltage VBE=0 −−30 V
emitter-base voltage open collector −−10 V
collector current (DC) −−500 mA
peak collector current −−1A
base current (DC) −−200 mA
total power dissipation T
≤ 25 °C; note 1 − 1.3 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
2
.
“Thermal considerations for the SOT89 in the General part of handbook SC04”
.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-a
th j-s
thermal resistance from junction to ambient note 1 93 K/W
thermal resistance from junction to solder point 12 K/W
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
For other mounting conditions, see
“Thermal considerations for the SOT89 in the General part of handbook SC04”
2
.
.
1997 Apr 24 3
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