Philips PXTA14 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D109
PXTA14
NPN Darlington transistor
Product specification
Supersedes data of 1997 Apr 23
1999 Apr 14
Philips Semiconductors Product specification
NPN Darlington transistor PXTA14
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 30 V).
PINNING
PIN DESCRIPTION
1 emitter
2 collector
APPLICATIONS
3 base
• High input impedance preamplifiers.
DESCRIPTION
NPN Darlington transistor in a SOT89 plastic package.
PNP complement: PXTA64.
MARKING
TYPE NUMBER MARKING CODE
PXTA14 p1N
handbook, halfpage
123
Bottom view
32
Fig.1 Simplified outline (SOT89) and symbol.
TR1
TR2
1
MAM300
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CES
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 30 V
collector-emitter voltage VBE=0 − 30 V
emitter-base voltage open collector − 10 V
collector current (DC) − 500 mA
peak collector current − 1A
base current (DC) − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 1.3 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm
For other mounting conditions, see
“Thermal considerations for the SOT89 in the General Part of associated
Handbook”.
1999 Apr 14 2
2
.
Philips Semiconductors Product specification
NPN Darlington transistor PXTA14
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see
Handbook”.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
CES
I
EBO
h
FE
V
CEsat
V
BEsat
V
BEon
f
T
thermal resistance from junction to ambient note 1 96 K/W
thermal resistance from junction to solder point 16 K/W
“Thermal considerations for the SOT89 in the General Part of associated
collector cut-off current IE= 0; VCB=30V − 100 nA
collector cut-off current VBE= 0; VCE=30V − 100 nA
emitter cut-off current IC= 0; VEB=10V − 100 nA
DC current gain IC= 10 mA; VCE= 5 V; (see Fig.2) 10000 −
I
= 100 mA; VCE= 5 V; (see Fig.2) 20000 −
C
collector-emitter saturation voltage IC= 100 mA; IB= 0.1 mA − 1.5 V
base-emitter saturation voltage IC= 100 mA; IB= 0.1 mA − 1.5 V
base-emitter on-state voltage IC= 100 mA; VCE=5V − 2V
transition frequency IC= 30 mA; VCE= 5 V; f = 100 MHz 125 − MHz
1999 Apr 14 3
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