Philips PXT4403 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D109
PXT4403
PNP switching transistor
Product specification
Supersedes data of 1997 May 29
1999 Apr 14
Philips Semiconductors Product specification
PNP switching transistor PXT4403
FEATURES
• High current (max. 600 mA)
PINNING
PIN DESCRIPTION
• Low voltage (max. 40 V).
APPLICATIONS
• Switching and linear amplification.
DESCRIPTION
handbook, halfpage
PNP switching transistor in a SOT89 plastic package.
NPN complement: PXT4401.
MARKING
TYPE NUMBER MARKING CODE
PXT4403 p2T
Fig.1 Simplified outline (SOT89) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1 emitter
2 collector
3 base
123
Bottom view
2
3
1
MAM297
SYMBOL P ARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−40 V
collector-emitter voltage open base −−40 V
emitter-base voltage open collector −−5V
collector current (DC) −−600 mA
peak collector current −−800 mA
peak base current −−200 mA
total power dissipation T
≤ 25 °C; note 1 − 1.3 W
amb
storage temperature −55 +150 °C
junction temperature − 150 °C
operating ambient temperature −55 +150 °C
Note
2
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
.
1999 Apr 14 2
Philips Semiconductors Product specification
PNP switching transistor PXT4403
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
Switching times (between 10% and 90% levels); (see Fig.3)
t
on
t
d
t
r
t
off
t
s
t
f
thermal resistance from junction to ambient note 1 97 K/W
thermal resistance from junction to soldering point 17 K/W
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
collector cut-off current IE= 0; VCB= −40 V −−50 nA
emitter cut-off current IC= 0; VEB= −5V −−50 nA
DC current gain IC= −0.1 mA; VCE= −1V 30 −
I
=−1 mA; VCE= −1V 60 −
C
=−10 mA; VCE= −1 V 100 −
I
C
I
= −150 mA; VCE= −2 V 100 300
C
= −500 mA; VCE= −2V 20 −
I
C
collector-emitter saturation
voltage
IC= −150 mA; IB= −15 mA −−400 mV
I
= −500 mA; IB= −50 mA −−750 mV
C
base-emitter saturation voltage IC= −150 mA; IB= −15 mA −−950 mV
I
= −500 mA; IB= −50 mA −−1.3 V
C
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 8.5 pF
emitter capacitance IC=ic= 0; VEB= −500 mV; f = 1 MHz − 35 pF
transition frequency IC= −20 mA; VCE= −10 V; f = 100 MHz 200 − MHz
turn-on time I
delay time − 15 ns
= −150 mA; I
Con
I
=15mA
Boff
= −15 mA;
Bon
− 40 ns
rise time − 30 ns
turn-off time − 350 ns
storage time − 300 ns
fall time − 50 ns
1999 Apr 14 3
Loading...