Philips PXT4401 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
‘
ook, halfpage
M3D109
PXT4401
NPN switching transistor
Product specification
Supersedes data of 1997 May 07
1999 Apr 14
Philips Semiconductors Product specification
NPN switching transistor PXT4401
FEATURES
• High current (max. 600 mA)
PINNING
PIN DESCRIPTION
• Low voltage (max. 40 V).
APPLICATIONS
• Switching and linear amplification in industrial and
consumer applications.
handbook, halfpage
DESCRIPTION
NPN switching transistor in a SOT89 plastic package.
PNP complement: PXT4403.
MARKING
TYPE NUMBER MARKING CODE
PXT4401 p2X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1 emitter
2 collector
3 base
2
3
1
123
Bottom view
MAM296
Fig.1 Simplified outline (SOT89) and symbol.
SYMBOL P ARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 60 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 6V
collector current (DC) − 600 mA
peak collector current − 800 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 1.25 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
2
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
.
1999 Apr 14 2
Philips Semiconductors Product specification
NPN switching transistor PXT4401
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
Switching times (between 10% and 90% levels); (see Fig.3)
t
on
t
d
t
r
t
off
t
s
t
f
thermal resistance from junction to ambient note 1 100 K/W
thermal resistance from junction to soldering point 20 K/W
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
collector cut-off current IE= 0; VCB=60V − 50 nA
emitter cut-off current IC= 0; VEB=6V − 50 nA
DC current gain VCE= 1 V; (see Fig.2) 20 −
I
= 0.1 mA 20 −
C
= 1 mA 40 −
I
C
I
=10mA 80 −
C
= 150 mA; note 1 100 300
I
C
I
= 500 mA; VCE= 2 V; note 1 40 −
C
collector-emitter saturation
voltage
IC= 150 mA; IB= 15 mA; note 1 − 400 mV
= 500 mA; IB= 50 mA; note 1 − 750 mV
I
C
base-emitter saturation voltage IC= 150 mA; IB= 15 mA; note 1 − 950 mV
I
= 500 mA; IB= 50 mA; note 1 − 1.2 V
C
collector capacitance IE=ie= 0; VCB=5V; f=1MHz − 8pF
emitter capacitance IC=ic= 0; VEB= 500 mV; f = 1 MHz − 30 pF
transition frequency IC= 20 mA; VCE= 10 V; f =100 MHz 250 − MHz
turn-on time I
delay time − 15 ns
= 150 mA; I
Con
I
= −15 mA
Boff
Bon
= 15 mA;
− 35 ns
rise time − 20 ns
turn-off time − 250 ns
storage time − 200 ns
fall time − 60 ns
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 14 3
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