Philips PXT3906 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D109
PXT3906
PNP switching transistor
Product specification
Supersedes data of 1997 May 05
1999 Apr 14
Philips Semiconductors Product specification
PNP switching transistor PXT3906
FEATURES
• Low current (max. 100 mA)
PINNING
PIN DESCRIPTION
• Low voltage (max. 40 V).
APPLICATIONS
• High-speed saturated switching applications.
DESCRIPTION
handbook, halfpage
PNP switching transistor in a SOT89 plastic package.
NPN complement: PXT3904.
MARKING
TYPE NUMBER MARKING CODE
PXT3906 p2A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1 emitter
2 collector
3 base
2
3
1
123
Bottom view
MAM297
Fig.1 Simplified outline (SOT89) and symbol.
SYMBOL P ARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−40 V
collector-emitter voltage open base −−40 V
emitter-base voltage open collector −−6V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−100 mA
total power dissipation T
≤ 25 °C; note 1 − 1.2 W
amb
storage temperature −55 +150 °C
junction temperature − 150 °C
operating ambient temperature −55 +150 °C
Note
2
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
.
1999 Apr 14 2
Philips Semiconductors Product specification
PNP switching transistor PXT3906
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
F noise figure I
thermal resistance from junction to ambient note 1 104 K/W
thermal resistance from junction to soldering point 24 K/W
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
collector cut-off current IE= 0; VCB= −30 V −−50 nA
emitter cut-off current IC= 0; VEB= −6V −−50 nA
DC current gain VCE= −1 V; (see Fig.2)
I
= −0.1 mA 60 −
C
= −1mA 80 −
I
C
I
=−10 mA 100 300
C
= −50 mA 60 −
I
C
I
= −100 mA 30 −
C
collector-emitter saturation
voltage
IC= −10 mA; IB= −1mA −−250 mV
= −50 mA; IB= −5mA −−400 mV
I
C
base-emitter saturation voltage IC= −10 mA; IB= −1mA −650 −850 mV
I
= −50 mA; IB= −5mA −−950 mV
C
collector capacitance IE=ie= 0; VCB= −5 V; f = 1 MHz − 4.5 pF
emitter capacitance IC=ic= 0; VEB= −500 mV; f = 1 MHz − 10 pF
transition frequency IC= −10 mA; VCE= −20 V; f = 100 MHz 250 − MHz
= −100 µA; VCE= −5 V; RS=1kΩ;
C
− 4dB
f = 10 Hz to 15.7 kHz
Switching times (between 10% and 90% levels); (see Fig.3)
t
on
t
d
t
r
t
off
t
s
t
f
turn-on time I
delay time − 35 ns
rise time − 35 ns
turn-off time − 300 ns
storage time − 225 ns
fall time − 75 ns
= −10 mA; I
Con
1999 Apr 14 3
= −1 mA; I
Bon
=1mA − 65 ns
Boff
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