Philips PXT3904 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D109
PXT3904
NPN switching transistor
Product specification
Supersedes data of 1997 May 05
1999 Apr 14
Philips Semiconductors Product specification
NPN switching transistor PXT3904
FEATURES
• Low current (max. 100 mA)
PINNING
PIN DESCRIPTION
• Low voltage (max. 40 V).
APPLICATIONS
• High-speed switching.
DESCRIPTION
handbook, halfpage
NPN switching transistor in a SOT89 plastic package.
PNP complement: PXT3906.
MARKING
TYPE NUMBER MARKING CODE
PXT3904 p1A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1 emitter
2 collector
3 base
2
3
1
123
Bottom view
MAM296
Fig.1 Simplified outline (SOT89) and symbol.
SYMBOL P ARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 60 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 6V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 1.2 W
amb
storage temperature −55 +150 °C
junction temperature − 150 °C
operating ambient temperature −55 +150 °C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
2
.
1999 Apr 14 2
Philips Semiconductors Product specification
NPN switching transistor PXT3904
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
F noise figure I
thermal resistance from junction to ambient note 1 105 K/W
thermal resistance from junction to soldering point 25 K/W
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
collector cut-off current IE= 0; VCB=30V − 50 nA
emitter cut-off current IC= 0; VEB=6V − 50 nA
DC current gain VCE= 1 V; (see Fig.2)
I
= 0.1 mA 60 −
C
= 1 mA 80 −
I
C
I
= 10 mA 100 300
C
=50mA 60 −
I
C
I
= 100 mA 30 −
C
collector-emitter saturation voltage IC= 10 mA; IB=1mA − 200 mV
= 50 mA; IB=5mA − 200 mV
I
C
base-emitter saturation voltage IC= 10 mA; IB= 1 mA 650 850 mV
I
= 50 mA; IB=5mA − 950 mV
C
collector capacitance IE=ie= 0; VCB=5V; f=1MHz − 4pF
emitter capacitance IC=ic= 0; VEB= 500 mV; f = 1 MHz − 8pF
transition frequency IC= 10 mA; VCE= 20 V; f = 100 MHz 300 − MHz
= 100 µA; VCE=5V; RS=1kΩ;
C
− 5dB
f = 10 Hz to 15.7 kHz
Switching times (between 10% and 90% levels); (see Fig.3)
t
on
t
d
t
r
t
off
t
s
t
f
turn-on time I
delay time − 35 ns
rise time − 35 ns
turn-off time − 240 ns
storage time − 200 ns
fall time − 50 ns
I
Con
Boff
= 10 mA; I
= −1mA
1999 Apr 14 3
Bon
= 1 mA;
− 65 ns
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