Philips PXT2907A Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D109
PXT2907A
PNP switching transistor
Product specification
Supersedes data of 1997 Jun 02
1999 Apr 14
Philips Semiconductors Product specification
PNP switching transistor PXT2907A
FEATURES
• High current (max. 600 mA)
PINNING
PIN DESCRIPTION
• Low voltage (max. 60 V).
APPLICATIONS
• Switching and linear amplification.
DESCRIPTION
handbook, halfpage
PNP switching transistor in a SOT89 plastic package.
NPN complement: PXT2222A.
MARKING
TYPE NUMBER MARKING CODE
PXT2907A p2F
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1 emitter
2 collector
3 base
2
3
1
123
Bottom view
MAM297
Fig.1 Simplified outline (SOT89) and symbol.
SYMBOL P ARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−60 V
collector-emitter voltage open base −−60 V
emitter-base voltage open collector −−5V
collector current (DC) −−600 mA
peak collector current −−800 mA
peak base current −−200 mA
total power dissipation T
≤ 25 °C; note 1 − 1.3 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
2
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
.
1999 Apr 14 2
Philips Semiconductors Product specification
PNP switching transistor PXT2907A
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
thermal resistance from junction to ambient note 1 97 K/W
thermal resistance from junction to soldering point 17 K/W
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
collector cut-off current IE= 0; VCB= −50 V −−10 nA
I
= 0; VCB= −50 V; T
E
= 125 °C −−10 µA
amb
emitter cut-off current IC= 0; VEB= −5V −−50 nA
DC current gain IC= −0.1 mA; VCE= −1V 75 −
=−1 mA; VCE= −1 V 100 −
I
C
I
= −10 mA; VCE= −1 V 100 −
C
= −150 mA; VCE= −2 V 100 300
I
C
I
= −500 mA; VCE= −2V 50 −
C
collector-emitter saturation
voltage
IC= −150 mA; IB= −15 mA −−400 mV
= −500 mA; IB= −50 mA −−1.6 V
I
C
base-emitter saturation voltage IC= −150 mA; IB= −15 mA −−1.3 V
I
= −500 mA; IB= −50 mA −−2.6 V
C
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 8pF
emitter capacitance IC=ic= 0; VEB= −500 mV; f = 1 MHz − 35 pF
transition frequency IC= −20 mA; VCE= −10 V;
200 − MHz
f = 100 MHz
Switching times (between 10% and 90% levels); (see Fig.2)
t
on
t
d
t
r
t
off
t
s
t
f
turn-on time I
delay time − 12 ns
rise time − 30 ns
turn-off time − 365 ns
storage time − 300 ns
fall time − 65 ns
= −150 mA; I
Con
I
=15mA
Boff
1999 Apr 14 3
= −15 mA;
Bon
− 40 ns
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