Philips PXB16050U Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
PXB16050U
NPN microwave power transistor
Product specification
Supersedes data of June 1992
1997 Feb 19
Philips Semiconductors Product specification
NPN microwave power transistor PXB16050U
FEATURES
• Input and output matching cells
allow an easier design of circuits
• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
• Interdigitated structure provides
high emitter efficiency
• Gold metallization realizes very
stable characteristics and excellent
lifetime
• Multicell geometry gives good
balance of dissipated power and
low thermal resistance.
APPLICATIONS
Common-base class C power
amplifiers at frequencies between
1.5 and 1.8 GHz.
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT439A metal ceramic flange
package with base connected to the
flange.
QUICK REFERENCE DATA
Microwave performance up to T
=25°C in a common base class C
mb
narrowband amplifier.
MODE OF
OPERATIONf(GHz)
V
(V)
CC
P
(W)
G
L
(dB)
po
η
(%)
C
Zi/Z
L
(Ω)
Class C (CW) 1.65 28 >45 >8.5 >45 see Figs 6 and 7
PINNING - SOT439A
PIN DESCRIPTION
1 collector
2 emitter
3 base connected to flange
handbook, 4 columns
Top view
1
c
b
33
2
MAM045
e
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 19 2
Philips Semiconductors Product specification
NPN microwave power transistor PXB16050U
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
Note
1. Up to 0.2 mm from ceramic.
collector-base voltage open emitter − 45 V
collector-emitter voltage open base − 15 V
collector-emitter voltage RBE=0Ω−45 V
emitter-base voltage open collector − 3V
collector current (DC ) − 6A
total power dissipation Tmb=75°C − 67 W
storage temperature −65 +200 °C
junction temperature − 200 °C
soldering temperature t ≤ 10 s; note 1 − 235 °C
100
handbook, halfpage
P
tot
(W)
80
60
40
20
0
−
50 200
P
=67W.
tot max
0
100
Tmb (°C)
Fig.2 Power derating curve.
MGL038
60
handbook, halfpage
P
L
(W)
40
20
0
0
VCC= 28V; f = 1.65 GHz.
24 8
MGL037
6
P
(W)
i
Fig.3 Load power as a function of input power
(see Fig.4).
1997 Feb 19 3
Philips Semiconductors Product specification
NPN microwave power transistor PXB16050U
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MAX. UNIT
R
th j-mb
R
th mb-h
Note
1. See “
CHARACTERISTICS
=25°C unless otherwise specified.
T
mb
SYMBOL PARAMETER CONDITIONS MAX. UNIT
I
CBO
I
CES
I
EBO
thermal resistance from junction to mounting base Tj= 100 °C 1.5 K/W
thermal resistance from mounting base to heatsink note 1 0.2 K/W
Mounting recommendations in the General part of handbook SC19a”
.
collector cut-off current VCB=40V; IE=0 3 mA
V
=45V; IE= 0 15 mA
CB
collector cut-off current VCE=30V; RBE=0 3 mA
emitter cut-off current VEB= 1.5 V; IC= 0 300 µA
APPLICATION INFORMATION
Microwave performance up to T
=25°C measured in the common base test circuit as shown in Fig.4 and working in
mb
CW class C mode.
MODE OF
OPERATION
Class C (CW);
see note 1
f
(GHz)
V
(V)
CC
P
(W)
L
1.65 28 ≥45; typ. 50 ≥8.5; typ. 9.5 ≥45; typ. 52 see Figs 6
G
po
(dB)
η
(%)
C
Zi/Z
L
(Ω)
and 7
Note
1. Type PXB16050U may be used for narrowband or broadband amplifiers within the frequency range 1.5 to 1.8 GHz.
Operation below 1.5 GHz may damage the transistor due to resonance of the internal output prematching circuit.
1997 Feb 19 4
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