Philips psmn7r0-100ps Datasheet

Page 1

1. Product profile

1.1 General description

Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide ran ge of industrial, communications and domestic equipment.

1.2 Features and benefits

PSMN7R0-100PS

N-channel 100V 6.8 mΩ standard level MOSFET in TO220

Rev. 02 — 7 January 2010 Product data sheet

 High efficiency due to low switching

 Suitable for standard level gate drive

and conduction losses

1.3 Applications

 DC-to-DC converters  Load switching

 Motor control  Server power supplies

1.4 Quick reference data

Table 1. Quick reference

Symbol Parameter Conditions Min Typ Max Unit

tot

Avalanche ruggedness

DS(AL)S

Dynamic characteristics

G(tot)

drain-source voltage Tj≥ 25 °C; Tj≤ 175 °C - - 100 V drain current Tmb=25°C; VGS=10V;

see Figure 1

total power dissipation

junction temperature -55 - 175 °C

non-repetitive drain-source avalanche energy

gate-drain charge VGS=10V; ID=25A;

total gate charge VGS=10V; ID=25A;

Tmb= 25 °C; see Figure 2 - - 269 W

VGS=10V; T

= 100 A; V

unclamped; RGS=50Ω

VDS= 50 V; see Figure 14 and 17

VDS= 50 V; see Figure 17 and 14

j(init)

=100V;

sup

=25°C;

[1]

- - 100 A

- - 315 mJ

-36-nC

- 125 - nC

Page 2

NXP Semiconductors

PSMN7R0-100PS

N-channel 100V 6.8 mΩ standard level MOSFET in TO220

Table 1. Quick reference

…continued

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

DSon

drain-source on-state resistance

[1] Continuous current is limited by package

VGS=10V; ID=15A;

= 100 °C; see Figure 12

=10V; ID=15A;

= 25 °C; see Figure 13

--12mΩ

-5.46.8mΩ

2. Pinning information

drain

bb076

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1G gate 2D drain 3S source mb D mounting base; connected to

12mb3

SOT78 (TO-220AB)

3. Ordering information

Table 3. Ordering information

Type number Package

PSMN7R0-100PS TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead

Name Description Version

TO-220AB

SOT78

Product data sheet Rev. 02 — 7 January 2010 2 of 16

Page 3

NXP Semiconductors

4. Limiting values

PSMN7R0-100PS

N-channel 100V 6.8 mΩ standard level MOSFET in TO220

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

DGR

tot

stg

sld(M)

Source-drain diode

Avalanche ruggedness

DS(AL)S

drain-source voltage Tj≥ 25 °C; Tj≤ 175 °C - 100 V drain-gate voltage Tj≤ 175 °C; Tj≥ 25 °C; RGS=20kΩ -100V gate-source voltage -20 20 V drain current VGS=10V; Tmb= 100 °C; see Figure 1 -85A

=10V; Tmb=25°C; see Figure 1

[1]

-100A peak drain current tp≤ 10 µs; pulsed; Tmb=25°C; see Figure 3 -475A total power dissipation Tmb=25°C; see Figure 2 -269W storage temperature -55 175 °C junction temperature -55 175 °C peak soldering

-260°C temperature

source current Tmb=25°C;

[1]

-100A peak source current tp≤ 10 µs; pulsed; Tmb=25°C - 475 A

non-repetitive drain-source avalanche

VGS=10V; T

= 100 V; unclamped; RGS=50Ω

sup

=25°C; ID=100A;

j(init)

-315mJ energy

[1] Continuous current is limited by package

150

(A)

100

(1)

0 50 100 150 200

003aad558

(°C)

Fig 1. Continuous drain current as a function of

mounting base temperature

120

der

(%)

0 20015050 100

03aa16

Tmb (°C)

Fig 2. Normalized total power dissipation as a

function of mounting base temperature

Product data sheet Rev. 02 — 7 January 2010 3 of 16

Page 4

NXP Semiconductors

PSMN7R0-100PS

N-channel 100V 6.8 mΩ standard level MOSFET in TO220

Limit R

(A)

-1

1 10 10

DSon

= VDS / I

tp = 10 μs

100 μs

1 ms 10 ms

100 ms

VDS (V)

003aad559

Fig 3. Safe operating area; continuous and peak drain cur rents as a function of drain-source voltage

Product data sheet Rev. 02 — 7 January 2010 4 of 16

Page 5

NXP Semiconductors

5. Thermal characteristics

PSMN7R0-100PS

N-channel 100V 6.8 mΩ standard level MOSFET in TO220

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

th(j-mb)

thermal resistance from junction to

see Figure 4 - 0.3 0.56 K/W

mounting base

th(j-a)

thermal resistance from junction to

vertical in free air - 60 - K/W

ambient

003aa d560

(s )

δ =

th (j-m b)

(K/W)

= 0.5

-1

0.2

0.1

0.05

-2

0.02

-3

single shot

-4

1e-6 10

-5

-4

-3

-2

-1

1 10

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

Product data sheet Rev. 02 — 7 January 2010 5 of 16

Page 6

NXP Semiconductors

6. Characteristics

PSMN7R0-100PS

N-channel 100V 6.8 mΩ standard level MOSFET in TO220

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

(BR)DSS

GS(th)

drain-source breakdown voltage

gate-source threshold voltage

ID=0.25mA; VGS=0V; Tj=-55°C 90 - - V

=0.25mA; VGS=0V; Tj=25°C 100 - - V

ID=1mA; VDS = VGS; Tj= 175 °C;

1- -V

see Figure 10

=1mA; VDS = VGS; Tj=25°C;

see Figure 11 I

=1mA; VDS = VGS; Tj=-55°C;

and 10

234V

--4.6V

see Figure 10

DSS

GSS

DSon

drain leakage current VDS=100V; VGS=0V; Tj= 125 °C - - 150 µA

=100V; VGS=0V; Tj= 25 °C - 0.08 5 µA

gate leakage current VGS=20V; VDS=0V; Tj= 25 °C - 10 100 nA

=-20V; VDS=0V; Tj= 25 °C - 10 100 nA

drain-source on-state resistance

VGS=10V; ID=15A; Tj= 100 °C; see Figure 12

=10V; ID=15A; Tj= 175 °C;

--12mΩ

-1519mΩ

see Figure 12 V

=10V; ID=15A; Tj=25°C;

-5.46.8mΩ

see Figure 13

internal gate resistance

f=1MHz - 0.74 - Ω

(AC)

Dynamic characteristi cs

G(tot)

total gate charge ID=25A; VDS=50V; VGS=10V;

see Figure 17

=0A; VDS=0V; VGS= 10 V - 100 - nC

and 14

gate-source charge ID=25A; VDS=50V; VGS=10V;

- 125 - nC

-28-nC

see Figure 14 and 17

GS(th)

GS(th-pl)

pre-threshold gate-source charge

post-threshold

ID=25A; VDS=50V; VGS=10V; see Figure 14

- 19.4 - nC

-9-nC

gate-source charge

gate-drain charge ID=25A; VDS=50V; VGS=10V;

-36-nC

see Figure 14 and 17

GS(pl)

gate-source plateau

VDS=50V; see Figure 14 and 17 -4.3-V

voltage

iss

oss

rss

input capacitance VDS=50V; VGS= 0 V; f = 1 MHz; Tj=25°C; output capacitance - 438 - pF

see Figure 15

reverse transfer

- 6686 - pF

- 272 - pF

capacitance

Product data sheet Rev. 02 — 7 January 2010 6 of 16

Page 7

NXP Semiconductors

003aa d562

003aa d566

PSMN7R0-100PS

N-channel 100V 6.8 mΩ standard level MOSFET in TO220

Table 6. Characteristics

…continued

Symbol Parameter Conditions Min Typ Max Unit

d(on)

d(off)

turn-on delay time VDS=50V; RL=2Ω; VGS=10V;

=4.7Ω; Tj=25°C

rise time - 45.6 - ns

G(ext)

turn-off delay time - 103.9 - ns fall time - 49.5 - ns

- 34.6 - ns

Source-drain diode

source-drain voltage IS=25A; VGS=0V; Tj=25°C;

-0.81.2V

see Figure 16

reverse recovery time IS=25A; dIS/dt = 100 A/µs; VGS=0V;

=50V

recovered charge - 167 - nC

(A)

300

240

180

120

5.5

12000

(pF)

10000

8000

6000

-64-ns

is s

rs s

01234

4.5

VGS (V) = 4

(V)

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values

4000

2000

0 5 10 15 20

(V)

Fig 6. Input and reverse transfer capacitances as a

function of gate-source voltage; typical values

Product data sheet Rev. 02 — 7 January 2010 7 of 16

Page 8

NXP Semiconductors

003aa d572

PSMN7R0-100PS

N-channel 100V 6.8 mΩ standard level MOSFET in TO220

240

(S )

180

120

0 50 100 150 200 250

(A)

Fig 7. Forward transconductance as a fun ction of

drain current; typical values

003aa d571

DS on

(mΩ)

(A)

0246

Tj = 175 °C

003aa d568

Tj = 25 °C

(V)

Fig 8. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

003aad280

GS(th)

(V)

max

0 5 10 15 20

(V)

Fig 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values

−60 180120060

typ

min

Tj (°C)

Fig 10. G ate-source threshold voltage as a function of

junction temperature

Product data sheet Rev. 02 — 7 January 2010 8 of 16

Page 9

NXP Semiconductors

003aa d563

PSMN7R0-100PS

N-channel 100V 6.8 mΩ standard level MOSFET in TO220

−1

(A)

−2

−3

−4

−5

−6

0642

min typ max

03aa35

VGS (V)

Fig 11. Su b-threshold drain current as a function of

gate-source voltage

DS on

(mΩ)

VGS (V) = 4.5

3.2

2.4

1.6

0.8

-60 0 60 120 180

003aad774

(°C)

Fig 12. Normalized drain-so urce on-state resistance

factor as a function of junction temperature

GS(pl)

0 20406080100

2010

(A)

Fig 13. Drain-source on-state resistance as a function

of drain current; typical values

GS(th)

GS1QGS2

G(tot)

003aaa5

Fig 14. Gate charge waveform definitions

Product data sheet Rev. 02 — 7 January 2010 9 of 16

Page 10

NXP Semiconductors

PSMN7R0-100PS

N-channel 100V 6.8 mΩ standard level MOSFET in TO220

(pF)

-1

1 10 10

003aad567

VDS (V)

iss

oss

rss

Fig 15. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical values

100

(A)

0 0.3 0.6 0.9 1.2

Tj = 175 °C

003aa d570

25 °C

(V)

Fig 16. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical values

Product data sheet Rev. 02 — 7 January 2010 10 of 16

Page 11

NXP Semiconductors

PSMN7R0-100PS

N-channel 100V 6.8 mΩ standard level MOSFET in TO220

(V)

VDS = 50V

0 35 70 105 140

003aa d569

(nC )

Fig 17. G ate-source voltage as a function of gate charge; typical values

Product data sheet Rev. 02 — 7 January 2010 11 of 16

Page 12

NXP Semiconductors

N-channel 100V 6.8 mΩ standard level MOSFET in TO220

7. Package outline

lastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB

PSMN7R0-100PS

SOT7

(1)

(2)

(3×)

(2)

(2×)

123

b(3×)

(1)

mounting

base

0 5 10 mm

scale

DIMENSIONS (mm are the original dimensions)

(1)

(2)

UNIT A

4.7

4.1

Notes

1. Lead shoulder designs may vary.

2. Dimension includes excess dambar.

OUTLINE VERSION

SOT78 SC-46

1.40

1.25

b b

0.9

0.6

IEC JEDEC JEITA

1.6

1.0

(2)

c D

1.3

0.7

1.0

0.4

3-lead TO-220AB

16.0

15.2

REFERENCES

6.6

5.9

E e

10.3

9.7

2.54

L L

15.0

12.8

3.30

2.79

(1)

max.

3.0

p q

3.0

3.8

3.5

2.7

EUROPEAN

PROJECTION

2.6

2.2

ISSUE DATE

08-04-23 08-06-13

Fig 18. Package outline SOT78 (TO-220AB)

Product data sheet Rev. 02 — 7 January 2010 12 of 16

Page 13

NXP Semiconductors

8. Revision history

PSMN7R0-100PS

N-channel 100V 6.8 mΩ standard level MOSFET in TO220

Table 7. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PSMN7R0-100PS_2 20100107 Product data sheet - PSMN7R0-100PS_1 Modifications: PSMN7R0-100PS_1 200 90917 Objective data sheet - -

• Status changed from objective to product.

Product data sheet Rev. 02 — 7 January 2010 13 of 16

Page 14

NXP Semiconductors

PSMN7R0-100PS

N-channel 100V 6.8 mΩ standard level MOSFET in TO220

9. Legal information

9.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nxp.com

[1][2]

Product status

[3]

Definition

9.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full dat a sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied u pon to co nt ain det ailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

9.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

In no event shall NXP Semiconductors be lia ble for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semi conductors’ aggregat e and cumulative liabil ity towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

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Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

NXP Semiconductors does not accept any liability related to any default , damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer’s third party customer(s) (hereinafter both referred t o as “Application”). It is customer’s sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a def ault of t he Application and the product. NXP Semiconductors does not accept any liability in this respect.

Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteri stics sections of this document, and as such is not complete, exhaustive or legally binding.

Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell product s that is ope n for accept ance or the gr ant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

, unless otherwise

Product data sheet Rev. 02 — 7 January 2010 14 of 16

Page 15

NXP Semiconductors

PSMN7R0-100PS

N-channel 100V 6.8 mΩ standard level MOSFET in TO220

Export control — This document as well as the item(s) described herein may

be subject to export control regulations. Export might require a prior authorization from national authorities.

Non-automotive qualified products — Unless the data sheet of an NXP Semiconductors product expressly states that t he product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testin g o r ap plication requ iremen t s. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applicati ons. In the event that customer uses the product for design-in and use in automot ive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever

customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.

9.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.

TrenchMOS — is a trademark of NXP B.V.

10. Contact information

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Product data sheet Rev. 02 — 7 January 2010 15 of 16

Page 16

NXP Semiconductors

N-channel 100V 6.8 mΩ standard level MOSFET in TO220

11. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3

5 Thermal characteristics . . . . . . . . . . . . . . . . . . .5

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .12

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .13

9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .14

9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .14

9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .14

9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .15

10 Contact information. . . . . . . . . . . . . . . . . . . . . .15

PSMN7R0-100PS

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Date of release: 7 January 2010

Document identifier: PSMN7R0-100PS_2