Philips psmn4r3-80es Datasheet

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PSMN4R3-80ES

I2PAK

N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK

Rev. 02 — 18 April 2011 Product data sheet

1. Product profile

1.1 General description

Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide ran ge of industrial, communications and domestic equipment.

1.2 Features and benefits

 High efficiency due to low switching

 Suitable for standard level gate drive

and conduction losses

1.3 Applications

 DC-to-DC converters  Load switch

 Motor control  Server power supplies

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

tot

Static characteristics

DSon

Dynamic characteristics

G(tot)

Avalanche ruggedness

DS(AL)S

drain-source voltage Tj≥ 25 °C; Tj≤ 175 °C - - 80 V drain current Tmb=25°C; VGS=10V;

[1]

- - 120 A

see Figure 1

total power

Tmb=25°C; see Figure 2 - - 306 W

dissipation junction temperature -55 - 175 °C

drain-source on-state resistance

VGS=10V; ID=25A;

= 25 °C; see Figure 13

=10V; ID=25A;

=100°C; see Figure 12

gate-drain charge VGS=10V; ID=75A;

= 40 V; see Figure 14;

total gate charge - 111 - nC

non-repetitive drain-source avalanche energy

see Figure 15

VGS=10V; T ID= 120 A; V

=50Ω; unclamped

j(init)

sup

=25°C;

≤ 80 V;

[2]

-3.74.3mΩ

[2]

-6.17.1mΩ

-28-nC

- - 676 mJ

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NXP Semiconductors

[1] Continuous current is limited by package. [2] Measured 3 mm from package.

2. Pinning information

PSMN4R3-80ES

N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 G gate 2 D drain 3Ssource

mb D drain

bb076

321

SOT226 (I2PAK)

3. Ordering information

Table 3. Ordering information

Type number Package

PSMN4R3-80ES I2PAK plastic single-ended package (I2PAK); TO-262 SOT226

Name Description Version

Product data sheet Rev. 02 — 18 April 2011 2 of 15

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NXP Semiconductors

4. Limiting values

PSMN4R3-80ES

N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

DGR

tot

stg

sld(M)

Source-drain diode

Avalanche ruggedness

DS(AL)S

[1] Continuous current is limited by package.

drain-source voltage Tj≥ 25 °C; Tj≤ 175 °C - 80 V drain-gate voltage Tj≥ 25 °C; Tj≤ 175 °C; RGS=20kΩ -80V gate-source voltage -20 20 V drain current VGS=10V; Tmb= 100 °C; see Figure 1

=10V; Tmb=25°C; see Figure 1

[1]

- 120 A

[1]

- 120 A peak drain current pulsed; tp≤ 10 µs; Tmb=25°C; see Figure 3 - 688 A total power dissipation Tmb=25°C; see Figure 2 - 306 W storage temperature -55 175 °C junction temperature -55 175 °C peak soldering temperature - 260 °C

source current Tmb=25°C

[1]

- 120 A peak source current pulsed; tp≤ 10 µs; Tmb= 25 °C - 688 A

non-repetitive drain-source avalanche energy

VGS=10V; T V

≤ 80 V; RGS=50Ω; unclamped

sup

=25°C; ID=120A;

j(init)

- 676 mJ

200

(A)

160

120

0 50 100 150 200

(1)

003aaf630

(°C)

Fig 1. Continuous drain current as a function of

mounting base temperature

120

der

(%)

0 20015050 100

03aa16

Tmb (°C)

Fig 2. Normalized total power dissipation as a

function of mounting base temperature

Product data sheet Rev. 02 — 18 April 2011 3 of 15

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NXP Semiconductors

PSMN4R3-80ES

N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK

(A)

Limit R

DSon

= VDS / I

tp =10 μs

100 μs

003aaf676

1 ms

10 ms 100 ms

-1

1 10 10

V DS (V)

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

Product data sheet Rev. 02 — 18 April 2011 4 of 15

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NXP Semiconductors

5. Thermal characteristics

PSMN4R3-80ES

N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

th(j-mb)

thermal resistance from junction to

see Figure 4 - 0.22 0.49 K/W

mounting base

th(j-a)

thermal resistance from junction to

Vertical in free air - 60 - K/W

ambient

th(j-mb)

(K/W)

-1

-2

-3

δ = 0.5

0.2

0.1

0.05

0.02

single shot

-6

-5

-4

-3

-2

-1

003aaf629

δ =

(s)

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

Product data sheet Rev. 02 — 18 April 2011 5 of 15

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NXP Semiconductors

6. Characteristics

PSMN4R3-80ES

N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

(BR)DSS

GS(th)

drain-source breakdown voltage

gate-source threshold voltage ID=1mA; VDS=VGS; Tj= 175 °C;

ID=250µA; VGS=0V; Tj= -55 °C 73 - - V

=250µA; VGS=0V; Tj=25°C 80--V

1--V

see Figure 10

=1mA; VDS=VGS; Tj=-55°C;

--4.6V

see Figure 10 I

=1mA; VDS=VGS; Tj=25°C;

234V

see Figure 10; see Figure 11

DSS

GSS

DSon

drain leakage current VDS=80V; VGS=0V; Tj= 25 °C - 0.02 10 µA

=80V; VGS=0V; Tj= 175 °C - - 500 µA

gate leakage current VGS=-20V; VDS=0V; Tj= 25 °C - - 100 nA

=20V; VDS=0V; Tj= 25 °C - - 100 nA

drain-source on-state resistance

VGS=10V; ID=25A; Tj= 175 °C; see Figure 12

=10V; ID=25A; Tj=25°C;

[1]

- 8.9 10.3 mΩ

[1]

-3.74.3mΩ

see Figure 13 V

=10V; ID=25A; Tj= 100 °C;

[1]

-6.17.1mΩ

see Figure 12

internal gate resistance (AC) f = 1 MHz - 0.9 - Ω

Dynamic characteristi cs

Q Q

G(tot)

GS GS(th)

total gate charge ID=0A; VDS=0V; VGS= 10 V - 104 - nC

=75A; VDS=40V; VGS=10V;

gate-source charge - 38 - nC

see Figure 14

; see Figure 15

pre-threshold gate-source

- 111 - nC

-24-nC

charge

GS(th-pl)

post-threshold gate-source

-14-nC

charge

Q V

C C C t

d(on)

d(off)

GS(pl)

iss oss rss

gate-drain charge - 28 - nC gate-source plateau voltage ID=25A; VDS=40V;

see Figure 14

; see Figure 15

input capacitance VDS=40V; VGS= 0 V; f = 1 MHz;

=25°C; see Figure 16

output capacitance - 701 - pF

-6.1-V

- 8161 - pF

reverse transfer capacitance - 337 - pF turn-on delay time VDS=40V; RL=0.53Ω;

=10V; R

rise time - 29 - ns turn-off delay time - 94 - ns

ID=75A

G(ext)

=4.7Ω;

-38-ns

fall time - 33 - ns

Product data sheet Rev. 02 — 18 April 2011 6 of 15

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NXP Semiconductors

PSMN4R3-80ES

N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK

Table 6. Characteristics …continued

Symbol Parameter Conditions Min Typ Max Unit

Source-drain diode

source-drain voltage IS=25A; VGS=0V; Tj=25°C;

reverse recovery time IS=25A; dIS/dt = 100 A/µs; recovered charge - 109 - nC

[1] Measured 3 mm from package.

see Figure 17

VGS=0V; VDS=20V

-0.81.2V

-59-ns

250

(S)

200

150

100

0 1530456075

003aaf619

(A)

Fig 5. Forward transconductance as a function of

drain current; typical values

003aaf621

DSon

(mΩ)

Tj = 25 °CTj = 175 °C

003aaf620

(V)

(A)

0246

Fig 6. Transfer characteristics: drain current as a

function of gate-source voltage; typical value s

003aaf622

(A)

100

8.0

20.0

6.0

5.5

0 5 10 15 20

(V)

Fig 7. Drain-source on-state resistance as a function

of gate-source voltage; typical values

0 0.5 1 1.5

Fig 8. Output characteristics: drain current as a

function of drain-source voltage; typica l v al ue s

VGS (V) = 4.5

4.4

4.2

4.0

(V)

Product data sheet Rev. 02 — 18 April 2011 7 of 15

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NXP Semiconductors

03aa35

PSMN4R3-80ES

N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK

003aaf623

(pF)

-1

1 10 10

iss

rss

VGS (V)

Fig 9. Input and reverse transfer capacitances as a

function of gate-source voltage; typical values

−1

(A)

−2

min typ max

GS(th)

(V)

−60 180120060

max

typ

min

003aad280

Tj (°C)

Fig 10. Gate-source threshold voltage as a function of

junction temperature

2.4

003aaf608

−3

−4

−5

−6

0642

VGS (V)

Fig 11. Sub-threshold drain current as a function of

gate-source voltage

1.8

1.2

0.6

-60 0 60 120 180 T

(°C)

Fig 12. Normailzed drain-source on-state resistance

factor as a function of junction temperature

Product data sheet Rev. 02 — 18 April 2011 8 of 15

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NXP Semiconductors

003aaa508

PSMN4R3-80ES

N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK

003aaf628

DSon

(mΩ)

4.4

VGS (V) = 4.5

6.0

20.0

0 20406080

(A)

Fig 13. Drain-source on-state resistance as a fun ction

of drain current; typical values

(V)

7.5

64V

40V

VDS = 16V

003aaf625

GS(pl)

GS(th)

GS1QGS2

G(tot)

Fig 14. Gate charge wa veform definitions

(pF)

003aaf626

iss

2.5

0 30 60 90 120

(nC)

Fig 15. Gate-source voltage as a function of gate

charge; typical values

-1

1 10 10

VDS (V)

oss

rss

Fig 16. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical values

Product data sheet Rev. 02 — 18 April 2011 9 of 15

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NXP Semiconductors

PSMN4R3-80ES

N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK

(A)

0 0.3 0.6 0.9 1.2

003aaf627

Tj = 25 °CTj = 175 °C

(V)

Fig 17. Source current as a function of source-drain voltage; typical values

Product data sheet Rev. 02 — 18 April 2011 10 of 15

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NXP Semiconductors

PSMN4R3-80ES

N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK

7. Package outline

lastic single-ended package (I2PAK); low-profile 3-lead TO-262 SOT22

mounting

base

DIMENSIONS (mm are the original dimensions)

UNIT

0.85

1.40

4.5

4.1

1.27

0.60

1.3

1.0

0.7

0.4

123

e e

max

1.6

1.2

10.3

9.7

10 mm

scale

2.54

15.0

13.5

3.30

2.79

2.6

2.2

OUTLINE

VERSION

SOT226

REFERENCES

IEC JEDEC JEITA

TO-262

EUROPEAN

PROJECTION

ISSUE DATE

06-02-14 09-08-25

Fig 18. Package outline SOT226 (I2PAK)

Product data sheet Rev. 02 — 18 April 2011 11 of 15

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NXP Semiconductors

8. Revision history

PSMN4R3-80ES

N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK

Table 7. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PSMN4R3-80ES v.2 20110418 Product data sheet - PSMN4R3-80ES v.1 Modifications:

• Status changed from objective to product.

• Various changes to content.

PSMN4R3-80ES v.1 20101228 Objective data sheet - -

Product data sheet Rev. 02 — 18 April 2011 12 of 15

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NXP Semiconductors

PSMN4R3-80ES

N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK

9. Legal information

9.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nxp.com.

[1] [2]

Product status

[3]

Definition

9.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied u pon to co nt ain det ailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

9.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semi conductors’ aggregat e and cumulative liabil ity towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonabl y be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteri stics sections of this document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.

NXP Semiconductors does not accept any liability related to any default , damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third part y customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective

, unless otherwise

Product data sheet Rev. 02 — 18 April 2011 13 of 15

Page 14

NXP Semiconductors

PSMN4R3-80ES

N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK

agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpret ed or construed as an offer to sell products that is open f or acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It i s neither qua lif ied nor test ed in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equ ipment or applications.

In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, da mages or failed produ ct cl aims resulting from custome r design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.

9.4 Trademarks

Notice: All referenced brands, prod uct names, service names and trad emarks are the property of their respective owners.

Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

10. Contact information

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Product data sheet Rev. 02 — 18 April 2011 14 of 15

Page 15

NXP Semiconductors

N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK

11. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3

5 Thermal characteristics . . . . . . . . . . . . . . . . . . .5

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .11

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .12

9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13

9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13

9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .13

9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14

10 Contact information. . . . . . . . . . . . . . . . . . . . . .14

PSMN4R3-80ES

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Date of release: 18 April 2011

Document identifier: PSMN4R3-80ES