Philips psmn020 DATASHEETS

Philips Semiconductors Product specification

N-channel TrenchMOS transistor PSMN020-150W

FEATURES SYMBOL QUICK REFERENCE DATA

• ’Trench’ technology

• Very low on-state resistance V

d

= 150 V

DSS

• Fast switching

• Low thermal resistance I

g

s

R

DS(ON)

= 73 A

D

≤ 20 mΩ

GENERAL DESCRIPTION PINNING SOT429 (TO247)

SiliconMAXproductsusethelatest PIN DESCRIPTION

Philips Trench technology to
achieve the lowest possible 1 gate
on-state resistance in each
package at each voltage rating. 2 drain

Applications:- 3 source

• d.c. to d.c. converters

2

• switched mode power supplies tab drain

1

The PSMN020-150Wis suppliedin
the SOT429 (TO247) conventional
leaded package.

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

3

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DSS

V

DGR

V

GS

I

D

Drain-source voltage Tj = 25 ˚C to 175˚C - 150 V
Drain-gate voltage Tj = 25 ˚C to 175˚C; RGS = 20 kΩ - 150 V
Gate-source voltage - ± 20 V
Continuous drain current Tmb = 25 ˚C - 73 A

Tmb = 100 ˚C - 51 A

I

DM

P

D

Tj, T

Pulsed drain current Tmb = 25 ˚C - 290 A
Total power dissipation Tmb = 25 ˚C - 300 W
Operating junction and - 55 175 ˚C

stg

storage temperature

AVALANCHE ENERGY LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

E

AS

I

AS

Non-repetitive avalanche Unclamped inductive load, IAS = 73 A; - 707 mJ
energy tp = 100 µs; Tj prior to avalanche = 25˚C;

VDD ≤ 25 V; RGS = 50 Ω; VGS = 5 V; refer to

fig:15
Non-repetitive avalanche - 73 A
current

November 1999 1 Rev 1.000

Philips Semiconductors Product specification

N-channel TrenchMOS transistor PSMN020-150W

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

R

th j-mb

R

th j-a

ELECTRICAL CHARACTERISTICS

Tj= 25˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GS(TO)

R

DS(ON)

I

GSS

I

DSS

Q

g(tot)

Q

gs

Q

gd

t

d on

t

r

t

d off

t

f

L

d

L

d

L

s

C

iss

C

oss

C

rss

Thermal resistance junction - 0.5 K/W
to mounting base
Thermal resistance junction in free air 45 - K/W
to ambient

Drain-source breakdown VGS = 0 V; ID = 0.25 mA; 150 - - V
voltage Tj = -55˚C 134 - - V
Gate threshold voltage VDS = VGS; ID = 1 mA 2.0 3.0 4.0 V

Tj = 175˚C 1.0 - - V

Tj = -55˚C - - 6 V
Drain-source on-state VGS = 10 V; ID = 25 A - 12 20 mΩ
resistance Tj = 175˚C - - 56 mΩ
Gate source leakage current VGS = ±10 V; VDS = 0 V - 2 100 nA
Zero gate voltage drain VDS = 150 V; VGS = 0 V; - 0.05 10 µA
current Tj = 175˚C - - 500 µA

Total gate charge ID = 73 A; V

= 120 V; VGS = 10 V - 227 - nC

DD

Gate-source charge - 46 - nC
Gate-drain (Miller) charge - 91 - nC

Turn-on delay time VDD = 75 V; RD = 2.7 Ω; - 34 - ns
Turn-on rise time VGS = 10 V; RG = 5.6 Ω -79-ns
Turn-off delay time Resistive load - 233 - ns
Turn-off fall time - 101 - ns

Internal drain inductance Measured from tab to centre of die - 3.5 - nH
Internal drain inductance Measured from drain lead to centre of die - 4.5 - nH
Internal source inductance Measured from source lead to source - 7.5 - nH

bond pad

Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 9537 - pF
Output capacitance - 854 - pF
Feedback capacitance - 380 - pF

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tj = 25˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

S

I

SM

V

SD

t

rr

Q

rr

November 1999 2 Rev 1.000

Continuous source current - - 73 A
(body diode)
Pulsed source current (body - - 290 A
diode)
Diode forward voltage IF = 25 A; VGS = 0 V - 0.85 1.2 V

IF = 75 A; VGS = 0 V - 1.1 - V

Reverse recovery time IF = 20 A; -dIF/dt = 100 A/µs; - 127 - ns
Reverse recovery charge VGS = 0 V; VR = 30 V - 1.0 - µC

Philips Semiconductors Product specification

N-channel TrenchMOS transistor PSMN020-150W

Normalised Power Derating, PD (%)

100

90
80
70
60
50
40
30
20
10

0

0 25 50 75 100 125 150 175

Mounting Base temperature, Tmb (C)

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

Normalised Current Derating, ID (%)

100

90
80
70
60
50
40
30
20
10

0

0 25 50 75 100 125 150 175

Mounting Base temperature, Tmb (C)

D 25 ˚C

= f(Tmb)

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

= f(Tmb); VGS ≥ 10 V

D 25 ˚C

Transient thermal impedance, Zth j-mb (K/W)

1

D = 0.5

0.2

0.1

0.1

0.05

0.02

0.01

single pulse

0.001
1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00

Pulse width, tp (s)

P

D

tp

D = tp/T

T

Fig.4. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-mb

Drain Current, ID (A)

80

Tj = 25 C VGS = 10V

70

60

50

40

30

20

10

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

Drain-Source Voltage, VDS (V)

8 V

6 V

4.2 V

5.2 V

5 V

4.8 V

4.6 V

4.4 V

Fig.5. Typical output characteristics, Tj = 25 ˚C

ID = f(VDS)

.

Peak Pulsed Drain Current, IDM (A)

1000

RDS(on) = VDS/ ID

100

10

1

1 10 100 1000

D.C.

Drain-Source Voltage, VDS (V)

tp = 10 us

100 us

1 ms

10 ms

100 ms

Fig.3. Safe operating area

ID & IDM = f(VDS); IDM single pulse; parameter t

p

Drain-Source On Resistance, RDS(on) (Ohms)

0.1

4.2 V

0.09

0.08

0.07

0.06

0.05

0.04

0.03

0.02

0.01
0

0 1020304050607080

4.4V

4.6 V

4.8 V

5V

Drain Current, ID (A)

5.2V

8 V

Tj = 25 C

6 V

VGS = 10V

Fig.6. Typical on-state resistance, Tj = 25 ˚C

R

= f(ID)

DS(ON)

.

November 1999 3 Rev 1.000