Philips PSMN005-55B, PSMN005-55P Datasheet
Philips Semiconductors Product specification
N-channel logic level TrenchMOS transistor PSMN005-55B, PSMN005-55P
FEATURES SYMBOL QUICK REFERENCE DATA
• ’Trench’ technology V
d
= 55 V
DSS
• Very low on-state resistance
• Fast switching I
= 75 A
D
• Low thermal resistance
g
R
R
s
≤ 5.8 mΩ (VGS = 10 V)
DS(ON)
≤ 6.3 mΩ (VGS = 5 V)
DS(ON)
GENERAL DESCRIPTION
SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in
each package at each voltage rating.
Applications:-
• d.c. to d.c. converters
• switched mode power supplies
The PSMN005-55P is supplied in the SOT78 (TO220AB) conventional leaded package.
The PSMN005-55B is supplied in the SOT404 surface mounting package.
PINNING SOT78 (TO220AB) SOT404 (D2PAK)
PIN DESCRIPTION
1 gate
2 drain
1
tab
tab
3 source
tab drain
123
2
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DSS
V
DGR
V
GS
V
GSM
I
D
I
DM
P
D
Tj, T
1 It is not possible to make connection to pin:2 of the SOT404 package
2 maximum current limited by package
Drain-source voltage Tj = 25 ˚C to 175˚C - 55 V
Drain-gate voltage Tj = 25 ˚C to 175˚C; RGS = 20 kΩ -55V
Continuous gate-source - ± 15 V
voltage
Peak pulsed gate-source Tj ≤ 150 ˚C - ± 20 V
voltage
Continuous drain current Tmb = 25 ˚C; VGS = 5 V - 75
Tmb = 100 ˚C; VGS = 5 V - 75
2
2
Pulsed drain current Tmb = 25 ˚C - 240 A
Total power dissipation Tmb = 25 ˚C - 230 W
Operating junction and - 55 175 ˚C
stg
storage temperature
A
A
October 1999 1 Rev 1.200
Philips Semiconductors Product specification
N-channel logic level TrenchMOS transistor PSMN005-55B, PSMN005-55P
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-mb
R
th j-a
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
E
AS
I
AS
Thermal resistance junction - 0.65 K/W
to mounting base
Thermal resistance junction SOT78 package, in free air 60 - K/W
to ambient SOT404 package, pcb mounted, minimum 50 - K/W
footprint
Non-repetitive avalanche Unclamped inductive load, IAS = 75 A; - 268 mJ
energy tp = 100 µs; Tj prior to avalanche = 25˚C;
VDD ≤ 15 V; RGS = 50 Ω; VGS = 5 V
Non-repetitive avalanche - 75 A
current
ELECTRICAL CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GS(TO)
R
DS(ON)
I
GSS
I
DSS
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
L
d
L
d
L
s
C
iss
C
oss
C
rss
Drain-source breakdown VGS = 0 V; ID = 0.25 mA; 55 - - V
voltage Tj = -55˚C 50 - - V
Gate threshold voltage VDS = VGS; ID = 1 mA 1.0 1.5 2.0 V
Tj = 175˚C 0.5 - - V
Tj = -55˚C - - 2.3 V
Drain-source on-state VGS = 10 V; ID = 25 A - 4.8 5.8 mΩ
resistance VGS = 5 V; ID = 25 A - 5.3 6.3 mΩ
VGS = 4.5 V; ID = 25 A - - 6.7 mΩ
VGS = 5 V; ID = 25 A; Tj = 175˚C - - 13.2 mΩ
Gate source leakage current VGS = ± 10 V; VDS = 0 V - 2 100 nA
Zero gate voltage drain VDS = 55 V; VGS = 0 V; - 0.05 10 µA
current Tj = 175˚C - - 500 µA
Total gate charge ID = 75 A; V
= 44 V; VGS = 5 V - 103 - nC
DD
Gate-source charge - 15 - nC
Gate-drain (Miller) charge - 52 - nC
Turn-on delay time VDD = 30 V; RD = 1.2 Ω; - 45 - ns
Turn-on rise time VGS = 5 V; RG = 10 Ω - 180 - ns
Turn-off delay time Resistive load - 420 - ns
Turn-off fall time - 235 - ns
Internal drain inductance Measured from tab to centre of die - 3.5 - nH
Internal drain inductance Measured from drain lead to centre of die - 4.5 - nH
(SOT78 package only)
Internal source inductance Measured from source lead to source - 7.5 - nH
bond pad
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 6500 - pF
Output capacitance - 1500 - pF
Feedback capacitance - 700 - pF
October 1999 2 Rev 1.200
Philips Semiconductors Product specification
N-channel logic level TrenchMOS transistor PSMN005-55B, PSMN005-55P
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous source current - - 75 A
(body diode)
Pulsed source current (body - - 240 A
diode)
Diode forward voltage IF = 25 A; VGS = 0 V - 0.85 1.2 V
IF = 75 A; VGS = 0 V - 1.1 - V
Reverse recovery time IF = 20 A; -dIF/dt = 100 A/µs; - 80 - ns
Reverse recovery charge VGS = 0 V; VR = 30 V - 0.2 - µC
October 1999 3 Rev 1.200
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