PSMN004-36B
PSMN004-36P/36B
N-channel enhancement mode field-effect transistor
Rev. 01 — 19 November 2001 |
Product data |
1. Description
N-channel logic level field-effect power transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
PSMN004-36P in SOT78 (TO-220AB)
PSMN004-36B in SOT404 (D2-PAK).
2. Features
■Very low on-state resistance
■Fast switching.
3. Applications
■DC to DC converters
■Switch mode power supplies.
4.Pinning information
Table 1: |
Pinning - SOT78 and SOT404, simplified outline and symbol |
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Pin |
Description |
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Simplified outline |
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Symbol |
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1 |
gate (g) |
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mb |
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mb |
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d |
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2 |
drain (d) |
[1] |
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3 |
source (s) |
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g |
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mb |
drain (d) |
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MBB076 |
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s |
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2 |
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MBK106 |
1 |
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3 |
MBK116 |
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1 |
2 |
3 |
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SOT78 (TO-220AB) |
SOT404 (D2-PAK) |
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[1]It is not possible to make connection to pin 2 of the SOT404 package.
1.TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
Philips Semiconductors |
PSMN004-36P/36B |
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N-channel enhancement mode field-effect transistor |
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5. Quick reference data |
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Table 2: |
Quick reference data |
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Symbol |
Parameter |
Conditions |
Typ |
Max |
Unit |
VDS |
drain-source voltage (DC) |
Tj = 25 to 175 °C |
− |
36 |
V |
ID |
drain current (DC) |
Tmb = 25 °C; VGS = 5 V |
− |
75 |
A |
Ptot |
total power dissipation |
Tmb = 25 °C |
− |
230 |
W |
Tj |
junction temperature |
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175 |
°C |
RDSon |
drain-source on-state resistance |
VGS = 10 V; ID = 25 A; Tj = 25°C |
3.5 |
4 |
mΩ |
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VGS = 5 V; ID = 25 A; Tj = 25°C |
4 |
5 |
mΩ |
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol |
Parameter |
Conditions |
Min |
Max |
Unit |
VDS |
drain-source voltage (DC) |
Tj = 25 to 175 °C |
− |
36 |
V |
VDGR |
drain-gate voltage (DC) |
Tj = 25 to 175 °C; RGS = 20 kΩ |
− |
36 |
V |
VGS |
gate-source voltage (DC) |
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− |
±15 |
V |
VGSM |
gate-source voltage |
tp ≤ 50 μs; pulsed; |
− |
±20 |
V |
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duty cycle 25 %; Tj ≤ 150 °C |
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ID |
drain current (DC) |
Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 |
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75 |
A |
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Tmb = 100 °C; VGS = 5 V; Figure 2 |
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75 |
A |
IDM |
peak drain current |
Tmb = 25 °C; pulsed; tp ≤ 10 μs; Figure 3 |
− |
240 |
A |
Ptot |
total power dissipation |
Tmb = 25 °C; Figure 1 |
− |
230 |
W |
Tstg |
storage temperature |
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−55 |
+175 |
°C |
Tj |
operating junction temperature |
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−55 |
+175 |
°C |
Source-drain diode |
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IS |
source (diode forward) current (DC) |
Tmb = 25 °C |
− |
75 |
A |
ISM |
peak source (diode forward) current |
Tmb = 25 °C; pulsed; tp ≤ 10 μs |
− |
240 |
A |
Avalanche ruggedness |
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EAS |
non-repetitive avalanche energy |
unclamped inductive load; |
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120 |
mJ |
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ID = 75 A; tp = 0.1 ms; VDD = 15 V; |
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RGS = 50 Ω; VGS = 5V; starting Tj = 25 °C; |
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IAS |
non-repetitive avalanche current |
unclamped inductive load; |
− |
75 |
A |
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VDD = 15 V; RGS = 50 Ω; VGS = 5V; |
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starting Tj = 25 °C |
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9397 750 08621 |
© Koninklijke Philips Electronics N.V. 2001. All rights reserved. |
Product data |
Rev. 01 — 19 November 2001 |
2 of 13 |
Philips Semiconductors |
PSMN004-36P/36B |
|
N-channel enhancement mode field-effect transistor |
|
120 |
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03aa16 |
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Pder |
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(%) |
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80 |
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40 |
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0 |
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0 |
50 |
100 |
150 |
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200 |
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T |
mb |
(oC) |
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P |
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= |
Ptot |
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× 100% |
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der |
---------------------- |
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P |
°C ) |
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tot (25 |
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Fig 1. Normalized total power dissipation as a function of mounting base temperature.
120 |
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03ag42 |
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ID |
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(%) |
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80 |
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40 |
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0 |
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0 |
50 |
100 |
150 |
200 |
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Tmb (ºC) |
I der |
I D |
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= ------------------- × 100% |
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I D(25 |
°C ) |
Fig 2. Normalized continuous drain current as a function of mounting base temperature.
103 |
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03ag44 |
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ID |
RDS(on) = VDS/ ID |
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(A) |
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tp = 10 us |
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102 |
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100 us |
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1 ms |
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DC |
10 ms |
10 |
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100 ms |
1 |
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1 |
10 |
102 |
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VDS (V) |
Tmb = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 08621 |
© Koninklijke Philips Electronics N.V. 2001. All rights reserved. |
Product data |
Rev. 01 — 19 November 2001 |
3 of 13 |
Philips Semiconductors |
PSMN004-36P/36B |
|||
|
|
N-channel enhancement mode field-effect transistor |
||
7. Thermal characteristics |
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Table 4: |
Thermal characteristics |
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Symbol |
Parameter |
Conditions |
Value |
Unit |
Rth(j-mb) |
thermal resistance from junction to mounting |
Figure 4 |
0.65 |
K/W |
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base |
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Rth(j-a) |
thermal resistance from junction to ambient |
vertical in still air; SOT78 package |
60 |
K/W |
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mounted on a printed circuit board; |
50 |
K/W |
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minimum footprint; SOT404 package |
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7.1 Transient thermal impedance
1 |
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03ag43 |
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Zth j-mb |
δ = 0.5 |
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(K/W) |
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10-1 |
0.2 |
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0.1 |
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0.05 |
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10-2 |
0.02 |
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tp |
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P |
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δ = T |
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single pulse |
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tp |
t |
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T |
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10-3 |
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10-6 |
10-5 |
10-4 |
10-3 |
10-2 |
10-1 |
tp (s) |
1 |
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Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 08621 |
© Koninklijke Philips Electronics N.V. 2001. All rights reserved. |
Product data |
Rev. 01 — 19 November 2001 |
4 of 13 |