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DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D102
PRF957
UHF wideband transistor
Product specification
Supersedes data of 1999 Mar 01
1999 Jul 23
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Philips Semiconductors Product specification
UHF wideband transistor PRF957
FEATURES
• Small size
• Low noise
• Low distortion
• High gain
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Communication and instrumentation systems.
DESCRIPTION
Silicon NPN transistor in a surface mount 3-pin SOT323
package. Thetransistor is primarily intended for wideband
applicationsin the GHz-range in theRFfrontend of analog
and digital cellular telephones, cordless phones, radar
detectors, pagers and satellite TV-tuners.
QUICK REFERENCE DATA
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
Marking code: W2.
3
1
1
2
MAM062
Fig.1 Simplified outline (SOT323) and symbol.
3
2
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
C
re
f
T
G
UM
NF noise figure Γ
feedback capacitance IC= 0; VCB=6V; f=1MHz − 0.4 − pF
transition frequency IC= 30 mA; VCE=6V; fm= 1 GHz − 8.5 − GHz
maximum unilateral power gain IC= 30 mA; VCE=6V;
T
=25°C; f = 1 GHz
amb
= Γ
S
; IC= 5 mA; VCE=6V;
opt
− 15 − dB
− 1.3 − dB
f = 1 GHz
P
R
tot
th j-s
total power dissipation Ts=60°C; note 1 −−270 mW
thermal resistance from junction
P
= 270 mW −−425 K/W
tot
to soldering point
Note
1. Ts is the temperature at the soldering point of the collector pin.
1999 Jul 23 2
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Philips Semiconductors Product specification
UHF wideband transistor PRF957
LIMITING VALUES
In accordance with the Absolute Maximum Rating System IEC 134.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
Note
1. T
s
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 10 V
emitter-base voltage open collector − 1.5 V
DC collector current − 100 mA
average collector current − 100 mA
total power dissipation Ts=60°C; note 1 − 270 mW
storage temperature −65 +150 °C
junction temperature − 175 °C
is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction
P
= 270 mW; Ts=60°C; note 1 425 K/W
tot
to soldering point
Note
is the temperature at the soldering point of the collector pin.
1. T
s
1999 Jul 23 3
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Philips Semiconductors Product specification
UHF wideband transistor PRF957
CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
DC characteristics
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
AC characteristics
C
re
f
T
2
|s
|
21
G
UM
NF noise figure Γ
collector-base breakdown voltage IC= 100 µA; IE=0 20 −−V
collector-emitter breakdown
IC= 100 µA; IB=0 10 −−V
voltage
emitter-base breakdown voltage IE=10µA; IC= 0 1.5 −−V
collector-base leakage current VCB= 10 V; IE=0 −−100 nA
emitter-base leakage current VEB=1V; IC=0 −−100 nA
DC current gain IC= 5 mA; VCE= 6 V 50 100 200
= 15 mA; VCE=6V − 100 −
I
C
feedback capacitance IC= 0; VCB= 6 V; f = 1 MHz − 0.4 − pF
transition frequency IC= 30 mA; VCE=6V; fm= 1 GHz − 8.5 − GHz
insertion gain IC= 30 mA; VCE=6V; f=1GHz − 14 − dB
maximum unilateral power gain;
note 1
IC= 30 mA; VCE=6V;
T
=25°C; f = 1 GHz
amb
= 30 mA; VCE=6V;
I
C
T
=25°C; f = 2 GHz
amb
= Γ
S
; IC= 5 mA; VCE=6V;
opt
− 15 − dB
− 9.2 − dB
− 1.3 − dB
f = 1 GHz
Γ
= Γ
S
; IC= 5 mA; VCE=6V;
opt
− 1.8 − dB
f = 2 GHz
Note
1. G
is the maximum unilateral power gain, assuming s12 is zero.
UM
1999 Jul 23 4
2
s
G
UM
10
-------------------------------------------------------1s
21
2
–()1s
11
–()
dBlog=
2
22
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Philips Semiconductors Product specification
UHF wideband transistor PRF957
400
handbook, halfpage
P
tot
(mW)
300
200
100
0
0 50 100 200
150
Ts (
Fig.2 Power derating as a function of soldering
point temperature.
MGS512
°C)
120
handbook, halfpage
h
FE
80
40
0
0
VCE=6V.
10 50
20 30 40
MGS513
IC (mA)
Fig.3 DC current gain as a function of collector
current; typical values.
0.8
handbook, halfpage
C
re
(pF)
0.6
0.4
0.2
0
04 12
IC= 0; f = 1 MHz.
8
VCB (V)
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
MGS514
10
handbook, halfpage
f
T
(GHz)
8
6
4
2
0
01020 40
VCE= 6 V; fm= 1 GHz; T
amb
=25°C.
30
Fig.5 Transition frequency as a function of
collector current; typical values.
MGS515
IC (mA)
1999 Jul 23 5